Kraftwerkseigenschaften von Windenergieanlagen hinsichtlich Kurzschlussverhalten, Engpass- und Blindleistungsmanagement sowie Spannungsregelung

The increasing number of wind turbines will lead to new demands for transmission and distribution system control in the years to come. In order to ensure a smooth integration of wind energy into an electrical energy system structure, wind farms will have to possess power plant properties and be able to provide ancillary services. The ENERCON concept offers solutions not only for critical situations, such as short-circuits and bottlenecks in the grid, but also for normal operation, such as reactive power management or voltage control. Wind farms will essentially function in a manner similar to conventional power plants and moreover offer additional advantages in the distribution grid.     

Internet traffic engineering

The main goal of Internet traffic engineering is to efficiently optimize the performance of operational networks in order to avoid the well-known shortcomings of the typical destination-based IP routing. Traffic engineering attempts to reduce or even avoid congestion hot spots and to improve resource utilization across the backbone IP network. During the last years traffic engineering has become an inevitable tool concerning performance optimization in large Internet backbones. The core objective of this paper is to give an overview of the architectures and mechanisms for traffic engineering.     

Nichtlinearer digitaler Reibungsbeobachter zur adaptiven Reibungskompensation bei Bewegungsregelungen

Friction can deteriorate the tracking behavior of motion control. By use of a friction observer an estimated value of the friction can be determined and through adaptive compensation of the friction its influence can be weakened. The following article developes a new digital nonlinear friction observer on ground of an already known continuous nonlinear friction observer, which can easily be parametrized. A mechanical model is used to compare this nonlinear friction observer with a linear one during simulations and real time investigation. The investigation shows that the effect of deterioration of the tracking behavior through friction is less significant with the new digital nonlinear friction observer than with the linear friction observer.     

Advanced Characterization and Optimization of NiOx:Cu-SAM Hole-Transporting Bi-Layer for 23.4% Efficient Monolithic Cu(In,Ga)Se2-Perovskite Tandem Solar Cells

The performance of five hole-transporting layers (HTLs) is investigated in both single-junction perovskite and Cu(In, Ga)Se₂ (CIGSe)-perovskite tandem solar cells: nickel oxide (NiO_x,), copper-doped nickel oxide (NiO_x:Cu), NiO_x+SAM, NiO_x:Cu+SAM, and SAM, where SAM is the [2-(3,-6Dimethoxy-9H-carbazol-9yl)ethyl]phosphonic acid (MeO-2PACz) self-assembled monolayer. The performance of the devices is correlated to the charge-carrier dynamics at the HTL/perovskite interface and the limiting factors of these HTLs are analyzed by performing time-resolved and absolute photoluminescence ((Tr)PL), transient surface photovoltage (tr-SPV), and X-ray/UV photoemission spectroscopy (XPS/UPS) measurements on indium tin oxide (ITO)/HTL/perovskite and CIGSe/HTL/perovskite stacks. A high quasi-Fermi level splitting to open-circuit (QFLS-V_oc) deficit is detected for the NiO_x-based devices, attributed to electron trapping and poor hole extraction at the NiO_x-perovskite interface and a low carrier effective lifetime in the bulk of the perovskite. Simultaneously, doping the NiO_x with 2% Cu and passivating its surface with MeO-2PACz suppresses the electron trapping, enhances the holes extraction, reduces the non-radiative interfacial recombination, and improves the band alignment. Due to this superior interfacial charge-carrier dynamics, NiO_x:Cu+SAM is found to be the most suitable HTL for the monolithic CIGSe-perovskite tandem devices, enabling a power-conversion efficiency (PCE) of 23.4%, V_oc of 1.72V, and a fill factor (FF) of 71%, while the remaining four HTLs suffer from prominent V_oc and FF losses.     

Monomolecular and Bimolecular Recombination of Electron–Hole Pairs at the Interface of a Bilayer Organic Solar Cell

While it has been argued that field‐dependent geminate pair recombination (GR) is important, this process is often disregarded when analyzing the recombination kinetics in bulk heterojunction organic solar cells (OSCs). To differentiate between the contributions of GR and nongeminate recombination (NGR) the authors study bilayer OSCs using either a PCDTBT‐type polymer layer with a thickness from 14 to 66 nm or a 60 nm thick p‐DTS(FBTTh₂)₂ layer as donor material and C₆₀ as acceptor. The authors measure JV‐characteristics as a function of intensity and charge‐extraction‐by‐linearly‐increasing‐voltage‐type hole mobilities. The experiments have been complemented by Monte Carlo simulations. The authors find that fill factor (FF) decreases with increasing donor layer thickness (L_p) even at the lowest light intensities where geminate recombination dominates. The authors interpret this in terms of thickness dependent back diffusion of holes toward their siblings at the donor–acceptor interface that are already beyond the Langevin capture sphere rather than to charge accumulation at the donor–acceptor interface. This effect is absent in the p‐DTS(FBTTh₂)₂ diode in which the hole mobility is by two orders of magnitude higher. At higher light intensities, NGR occurs as evidenced by the evolution of s‐shape of the JV‐curves and the concomitant additional decrease of the FF with increasing layer thickness.     

Surge arresters for insulation coordination in UHV power systems—related problems and solutions

Surge arresters play an important role in the insulation coordination of ultra high-voltage (UHV) electric power systems. In this contribution the requirements on the surge arresters are discussed in comparison with those in conventional applications, and how surge arrester standards are being changed to cover these special requirements.     

AlGaN/GaN HEMTs on SiC for high power broadband applications up to 40 GHz

An overview of properties and recent achievements for AlGaN/GaN high electron mobility transistors (HEMT) on semi-insulating SiC substrate is given towards high power and broadband applications up to a frequency of 40 GHz. Starting from epitaxial growth and process technology we present state-of-the-art power results obtained at the Fraunhofer Institute (IAF) from AlGaN/GaN HEMTs on SiC. Further, a one-stage 16 GHz MMIC power amplifier circuit with 1.6 W output power is presented. This result represents the first AlGaN/GaN MMIC on SiC fabricated in Europe.     

Evolution der akustischen Oberflächenwellen-Bauelemente

A selective survey is given on the development of surface acoustic wave (SAW) devices since the 1970’s. Emphasis is put on research and development delivered by the University of Technology Vienna, Austria, in cooperation with the corporate research of Siemens (now EPCOS) Munich, Germany. Future trends of SAW-technology are discussed.     

Microwave and millimeterwave oscillator developments at the Johannes Kepler University

This contribution reviews the research work performed at the Johannes Kepler University of Linz, Austria, on the development of oscillators for the microwave and millimeter wave frequency range. This work, performed by the Microelectronics Institute and the Institute for Communications and Information Engineering, covers the range from low GHz frequencies up to 61 GHz and is devoted to applications like mobile communications and sensing. The active devices are based on gallium arsenide (GaAs), silicon germanium (SiGe), and Silicon (Si) and include Gunn-devices, bipolar transistors, and CMOS-technology.     

Molecular Origin of the Charge Carrier Mobility in Small Molecule Organic Semiconductors

Small‐molecule organic semiconductors are used in a wide spectrum of applications, ranging from organic light emitting diodes to organic photovoltaics. However, the low carrier mobility severely limits their potential, e.g., for large area devices. A number of factors determine mobility, such as molecular packing, electronic structure, dipole moment, and polarizability. Presently, quantitative ab initio models to assess the influence of these molecule‐dependent properties are lacking. Here, a multiscale model is presented, which provides an accurate prediction of experimental data over ten orders of magnitude in mobility, and allows for the decomposition of the carrier mobility into molecule‐specific quantities. Molecule‐specific quantitative measures are provided how two single molecule properties, the dependence of the orbital energy on conformation, and the dipole‐induced polarization determine mobility for hole‐transport materials. The availability of first‐principles based models to compute key performance characteristics of organic semiconductors may enable in silico screening of numerous chemical compounds for the development of highly efficient optoelectronic devices.