稀土Si_3N_4陶瓷材料中铝的络合滴定法测定

提出了强碱介质沉淀钇及有关杂质元素而与铝进行分离的方法。试液酸化后采用ＮａＦ析出法络合滴定测定铝。     

在（311）面上所生长的Al_xGa_（1－x）As／GaAs单量子阱特性

文章报道了用分子束外延（ＭＢＥ）法在６００℃和６５０℃下，在Ｓｉ掺杂的ＧａＡｓ衬底的（３１１）Ａ和（３１１）Ｂ面上成功地生长了高质量的ＡｌｘＧａ１－Ａｓ／ＧａＡｓ单量子阱材料。计算了光荧光（ＰＬ）峰值能量，并与实验作了比较。讨论了（３１１）Ａ和（３１１）Ｂ面上的不同生长特性。     

The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise

The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process     

HT－7托卡马克的八管弹丸注入器

介绍了用于ＨＴ－７托卡马克的的八管弹丸注入器的物理、工程设计原理和结构特点及配置的各种诊断手段。注入器采用气动发射技术，弹丸为１ｍｍ×１ｍｍ，１．２ｍｍ×１．２ｍｍ，１．５ｍｍ×ｌ．５ｍｍ圆柱体氢丸，丸速０．８～１．５ｋｍ／ｓ工作频率１～８Ｈｚ。     

三维定量储层地质模型与参数动态预测方法

提出了三维定量储层地质模型及其参数动态预测方法，用该方法可预测储层开采状态，水淹区及剩余油区分布和各剩余油区的可采储量，三维定量储层地质模型的预测图件可为合理开采提供依据。     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

Transient behavior of subthreshold characteristics of fullydepleted SOI MOSFETs

It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFETs show a transient behavior under certain front-gate and back-gate voltage conditions. The cause of this anomaly is explained, and applications for the phenomenon are pointed out. Particularly, a simple way to measure the silicon film thickness is suggested     

All-optical photonic switches using integrated inverted asymmetricFabry-Perot modulators and heterojunction phototransistors

InGaAs/GaAs(100) multiple-quantum-well-based inverted cavity asymmetric Fabry-Perot modulators are vertically integrated with GaAs/AlGaAs heterojunction phototransistors to yield all-optical photonic switches. The photonic switches using `normally on' modulator pixels exhibit an output on-off ratio of 12:1 with internal optical gain of 4 dB. The photonic switches using `normally off' modulator pixels yield similar contrast and gain, but exhibit intrinsic bistable behavior. The inverted cavity modulators employed permit utilizing the transparency of the GaAs substrate at the operating wavelength and offer advantages for fabricating large arrays for optical signal processing     

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通过对J.J.Arps方程的推导,提出了油气藏产量递减曲线分析的最佳拟合法。用该法可直接求出递减指数N、初始递减率D1及油气递减前的稳定产量Qi,避免了使用试差法的大量运算过程,大大提高了油气藏工程中指标预测的精度。