The Possibility of Dense Materials Based on Obtaining an AlN–SiC Solid Solution by Self-Propagating High-Temperature Synthesis Gasostating

Russian Journal of Non-Ferrous Metals - The synthesis and sintering of the (AlN)x(SiC)1 – x solid solution have been studied under conditions of self-propagating high-temperature synthesis...     

Temperature and frequency characteristics of composites with semiconductor fillers

The paper describes the results of a study on the temperature and frequency dependences of the dielectric permeability and dielectric loss tangent of composite materials composed of low density polyethylene filled with cadmium sulfide (LDPE/CdS) and indium(III) selenide (LDPE/In₂Se₃) in the temperature range of 300–450 K and a frequency range of 0–10¹⁴ Hz. It is revealed that a variation in the filler content and the effect of external factors can yield novel composite materials with desired dielectric characteristics.     

N-Substituted Nipecotic Acids as (S)-SNAP-5114 Analogues with Modified Lipophilic Domains

Potential mGAT4 inhibitors derived from the lead substance (S)-SNAP-5114 have been synthesized and characterized for their inhibitory potency. Variations from the parent compound included the substitution of one of its aromatic 4-methoxy and 4-methoxyphenyl groups, respectively, with a more polar moiety, including a carboxylic acid, alcohol, nitrile, carboxamide, sulfonamide, aldehyde or ketone function, or amino acid partial structures. Furthermore, it was investigated how the substitution of more than one of the aromatic 4-methoxy groups affects the potency and selectivity of the resulting compounds. Among the synthesized test substances (S)-1-{2-[(4-formylphenyl)bis(4-methoxyphenyl)-methoxy]ethyl}piperidine-3-carboxylic acid, that features a carbaldehyde function in place of one of the aromatic 4-methoxy moieties of (S)-SNAP-5114, was found to have a pIC₅₀ value of 5.89±0.07, hence constituting a slightly more potent mGAT4 inhibitor than the parent substance while showing comparable subtype selectivity.