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171.
Yu. I. Golovin D. V. Lopatin R. K. Nikolaev A. V. Umrikhin 《Technical Physics Letters》2004,30(5):426-428
The effect of crystal orientation on the photogeneration of free charge carriers was studied for C60 single crystals in a weak magnetic field. The photoconductivity sharply depends on the orientation of magnetic field with
respect to the crystallographic directions, showing a 5–8% increase for seven axes of the C60 crystal. 相似文献
172.
The analysis of 124 curves obtained in short-term tensile tests demonstrate that they can be described by varying strain hardening and softening characteristics. Different stress–strain curves can be produced at invariable yield strength and ultimate strength and interrelated proportional variations of the above characteristics. To determine some specific stress–strain curve, it is necessary to take account of yield strength and ultimate strength as well as strain corresponding to the latter. The relations between yield strength, ultimate strength and hardening and their practically complete absence between these parameters and softening were statistically established. 相似文献
173.
V. G. Deibuk 《Semiconductors》2003,37(10):1151-1155
The miscibility gaps and the critical temperatures of spinodal decomposition of ternary semiconducting Ga-In-Sb, Ga-In-P, and In-As-Sb systems are calculated by taking into account the deformation energy and the effect of plastic relaxation caused by the misfit dislocations. It is shown that taking into consideration elastic energy narrows the ranges of spinodal decomposition and lowers its critical temperature. The introduction of the phenomenological parameter into Matthews-Blakeslee formula makes it possible to reach a satisfactory agreement between theoretically calculated values of critical thickness of epitaxial films and the experimental data. 相似文献
174.
E. Griese Prof. Dr.-Ing. 《e & i Elektrotechnik und Informationstechnik》2003,120(6):186-191
Optical interconnection technology on the printed circuit board level is a key technology for future microelectronic equipment. The consideration of functional, technological, and economical requirements results in a hybrid solution, where electrical and optical interconnects are integrated into one substrate called electrical optical printed circuit board. The significant part of the entire design process for electrical optical printed circuit boards is marked by the design supporting modelling and simulation of optical interconnects. Based on an abstract model for an entire optical interconnect a simulation model for optical multimode-waveguides is presented, taking into account all significant waveguide properties. Apart from that, the modeling of active components (laser- and photo-diodes) is addressed. 相似文献
175.
The application of barrier discharges at atmospheric pressure in air expands on the market of plasma technology, because it is an ecological and cost‐effective alternative to other processes of surface treatment. These plasmas usually consist of a multitude of spatially and temporally localized filaments, whose distribution should be as even as possible for homogeneous treatment. This holds especially for the plasma treatment of sensitive goods such as wool or other textiles. In equipment for continuous pass of material the barrier arrangements often consist of a system cylinder – cylinder or cylinder – plane, whereby the gap width changes locally. Space distribution and intensity of filaments has been investigated by means of short‐time photography and spatially resolved measurement of current distribution and energy distribution derived from it. The local dependency found can be explained by means of a capacitive equivalent circuit. 相似文献
176.
The tensile elastic modulus (E), yield stress (σY) and microhardness (MH) of neat and binary and ternary blends of glassy semicrystalline ethylene–vinyl alcohol copolymer (EVOH), a glassy amorphous polyamide and a semicrystalline nylon‐containing ionomer covering a broad range of properties were examined. The tests were carried out on dry and water‐equilibrated samples to produce stiffer and softer materials, respectively. From the results, more accurate linear correlations were found to describe adequately the microhardness, modulus and yield stress of these strongly self‐associated polymers through hydrogen bonding. Copyright © 2003 Society of Chemical Industry 相似文献
177.
Effect of Strain Rate on Discontinuous Flow and Mechanical Characteristics of High-Nitrogenous Steel
Experimental study on the effect of strain rate on discontinuous flow and mechanical characteristics of the high-nitrogenous steel Kh23AG19F has been performed. Within the range of strain rates from 4.62 · 10-5 to 1.85 · 10 -4 s-1, discontinuous flow, reflected by serration on the tensile diagram, is chiefly determined by intergranular deformation mechanisms. Under strain rates over 1.85 · 10-2 s-1, combined deformation modes prevail, which cause a change in the character of discontinuous flow and transform a serrated tensile diagram into a wavy graph, with the yield stress of steel increased significantly. 相似文献
178.
Chloride doped polyaniline conducting polymer films have been prepared in a protic acid medium (HCl) by potentiodynamic method
in an electrochemical cell and studied by cyclic voltammetry and FTIR techniques. The FTIR spectra confirmed Cl- ion doping in the polymers. The polymerization rate was found to increase with increasing concentration of aniline monomer.
But the films obtained at high monomer concentration were rough having a nonuniform flaky polyaniline distribution. Results
showed that the polymerization rate did not increase beyond a critical HCl concentration. Cyclic voltammetry suggested that,
the oxidation-reduction current increased with an increase in scan rate and that the undoped polyaniline films were not hygroscopic
whereas chloride doped polyaniline films were found to be highly hygroscopic. 相似文献
179.
180.
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs) 总被引:1,自引:0,他引:1
Verzellesi G. Mazzanti A. Basile A.F. Boni A. Zanoni E. Canali C. 《Electron Devices, IEEE Transactions on》2003,50(8):1733-1740
Gate-lag effects are characterized in AlGaAs-GaAs heterostructure field-effect transistors (HFETs) by means of measurements and numerical device simulations. Gate lag increasingly affects device switching at increasing ungated recess extension, suggesting that responsible deep levels be located at the ungated, recess surface of the HFET. Gate lag diminishes by making the off-state gate-source voltage less negative and by increasing the drain bias. Increasing the temperature makes the turn-on transient faster at low drain bias, while slightly delaying it at high drain bias. Numerical device simulations accounting for acceptor-like traps at the ungated surface predict gate-lag phenomena in good agreement with experiments, reproducing correctly the observed bias and temperature dependences. Simulations show that surface states behave, during the turn-on transient, as hole traps capturing holes attracted at the ungated surface by the negative trapped charge. 相似文献