Structural Stabilities and Elastic Thermodynamic Properties of SrTe Compound and SrTe<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ca<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> Alloy Under High Pressure

The effect of pressure on the structural, elastic, and thermodynamic properties of SrTe in both B1 (rocksalt) and B2 (CsCl-type) phases and the SrTe_1?x Ca _x alloys with Ca dopant concentrations at x = 0.16667, 0.20, 0.33333, 0.42857, 0.44444 and 0.50 have been investigated using the two new gradient-corrected functional developed by Perdew, J.P.; Burke, K.; Ernzerhof named Density-Gradient Expansion for Exchange in Solids (PBEsol) and generalized Wu–Cohen (WC), in a significant range of pressure from 0 GPa to 30 GPa. The structure parameters, elastic stiffness constants c _ij , the bulk modulus (B), Kleinman parameter (\( \xi \)), shear anisotropies A _shear are also determined. Furthermore, as reported in this study, the aggregate elastic modulus (B, G, E), Poisson’s ratio (ν) and the Lame’s coefficients (λ) are estimated. On the other hand, the ductility, brittleness, longitudinal, transverse sound velocities and the Debye temperature Θ_D(T) are also obtained. Importantly, our results are in reasonable agreement with the available theoretical and experimental data. To the best of our knowledge, this is the first study of the effect of the composition on the properties of the SrTe_1?x Ca _x alloys which may encourage other works for the confirmation of the reported results.     

The Story of Collective Action: The Emergence of Ideological Leaders,Collective Action Network Leaders,and Cross-Sector Network Partners in Civil Society

Collective action and community ecology theories frame this study of longitudinal interorganizational networks in Croatia during the country's political transition. As time progresses toward political stability, grass-roots organizing activities shift through participation in new networks. Although engaged cross-sector communication was important in early stages of the transformation, homophilous partnering emerged as the system stabilized. System stability left room for organizations to exit the collective action network but with costs associated with centralized organizing. Over time, organizations embodied roles as ideological leaders, collective action network leaders, and within-sector network partners. We offer a unique contribution to community ecology and collective action theories with a communication-centered framework that emphasizes the nature of communication in interorganizational networks over a 4-year period.     

The Effect of Ageing on Exciton Dynamics,Charge Separation,and Recombination in P3HT/PCBM Photovoltaic Blends

A study of how light‐induced degradation influences the fundamental photophysical processes in the active layer of poly(3‐hexylthiophene)/[6,6]‐phenyl C₆₁‐butyric acid methyl ester (P3HT/PCBM) solar cells is presented. Non‐encapsulated samples are systematically aged by exposure to AM 1.5 illumination in the presence of dry air for different periods of time. The extent of degradation is quantified by the relative loss in the absorption maximum of the P3HT, which is varied in the range 0% to 20%. For degraded samples an increasing loss in the number of excitons within the P3HT domains is observed with longer ageing periods. This loss occurs rapidly, within the first 15 ps after photoexcitation. A more pronounced decrease in the population of polarons than excitons is observed, which also occurs on a timescale of a few picoseconds. These observations, complemented by a quantitative analysis of the polaron and exciton population dynamics, unravel two primary loss mechanisms for the performances of aged P3HT/PCBM solar cells. One is an initial ultrafast decrease in the polaron generation, apparently not related to the exciton diffusion to the polymer/fullerene interface; the second, less significant, is a loss in the exciton population within the photoexcited P3HT domains. The steady‐state photoinduced absorption spectra of degraded samples exhibits the appearance of a signal ascribed to triplet excitons, which is absent for non‐degraded samples. This latter observation is interpreted considering the formation of degraded sites where intersystem crossing and triplet exciton formation is more effective. The photovoltaic characteristics of same blends are also studied and discussed by comparing the decrease in the overall power conversion efficiency of solar cells.     

Vapor Annealing as a Post-Processing Technique to Control Carrier Concentrations of Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> Thin Films

This article demonstrates that carrier concentrations in bismuth telluride films can be controlled through annealing in controlled vapor pressures of tellurium. For the bismuth telluride source with a small excess of tellurium, all the films reached a steady state carrier concentration of 4 × 10¹⁹ carriers/cm³ with Seebeck coefficients of −170 μV K⁻¹. For temperatures below 300°C and for film thicknesses of 0.4 μm or less, the rate-limiting step in reaching a steady state for the carrier concentration appeared to be the mass transport of tellurium through the gas phase. At higher temperatures, with the resulting higher pressures of tellurium or for thicker films, it was expected that mass transport through the solid would become rate limiting. The mobility also changed with annealing, but at a rate different from that of the carrier concentration, perhaps as a consequence of the non-equilibrium concentration of defects trapped in the films studied by the low temperature synthesis approach.     

New CMOS Class AB Transmitter for 10 Gb/s Serial Links

This paper presents a new fully differential CMOS class AB transmitter for 10 Gb/s serial links. The transmitter consists of a fully differential multiplexer, a rail-to-rail configured pre-amplification stage, and a push-pull output stage. The multiplexer achieves a high multiplexing speed by using modified pseudo-NMOS logic where pull-up networks are replaced with self-biased active inductors. The rail-to-rail configured pre-amplification stage with active inductors amplifies the signals from the multiplexer. The fully differential output current is generated by a class AB output stage operated in a push-pull mode. High data rates of the transmitter are obtained by ensuring that the transistors in both the pre-amplification and output stages are always in saturation and the voltage swing of all critical nodes is small. The fully differential configuration of the transmitter effectively suppresses common-mode disturbances, particularly those coupled from the power and ground rails, the electro-magnetic interference exerted from channels to neighboring devices is also minimized. The transmitter minimizes switching noise by drawing a constant current from the supply voltage. The transmitter has been implemented in TSMC 0.18 μm 1.8 V 6-metal CMOS technology and analyzed using Spectre from Cadence Design Systems with BSIM3.3 device models. Simulation results demonstrate that the transmitter provides a 5 mA peak-to-peak differential output current with 100 ps eye-width and >5 mA eye-height at 10 Gb/s. The transmitter consumes 18 mW with a total transistor area of 100 μm² approximately. Jean Jiang received the B.Eng. degree in Electrical Engineering from Wuhan University of Technology, Wuhan, China in 1995, and the M.A.Sc. degree in Electrical and Computer Engineering from Ryerson University, Toronto, Ontario, Canada in 2004. From 1999 to 2001, she worked for Ericsson Global IT Services where she was a technical staff to maintain computer networks. From 2002 to 2004, she was a research assistant and a M.A.Sc. student with the Microsystem Research Laboratory in the Department of Electrical and Computer Engineering at Ryerson University. She is now with Intel Corp., CA. as an IC design engineer. Her research interests are in analog CMOS circuit design for high-speed data communications. Jean Jiang was awarded the Ontario Graduate Scholarship in 2003–2005 for academic excellence. Fei Yuan received the B.Eng. degree in electrical engineering from Shandong University, Jinan, China in 1985, the M.A.Sc. degree in chemical engineering and Ph.D. degree in electrical engineering from University of Waterloo, Waterloo, Ontario, Canada in 1995 and 1999, respectively. During 1985–1989, he was a Lecturer in the Department of Electrical Engineering, Changzhou Institute of Technology, Jiangsu, China. In 1989 he was a Visiting Professor at Humber College of Applied Arts and Technology, Toronto, Ontario, Canada, and Lambton College of Applied Arts and Technology, Sarnia, Ontario, Canada. He was with Paton Controls Limited, Sarnia, Ontario, Canada as a Controls Engineer during 1989–1994. Since 1999 he has been with the Department of Electrical and Computer Engineering, Ryerson University, Toronto, Ontario, Canada, where he is currently an Associate Professor and the Associate Chair for Undergraduate Studies and Faculty Affairs. He is the co-author of the book Computer Methods for Analysis of Mixed-Mode Switching Circuits (Springer-Verlag, 2004, with Ajoy Opal). Dr. Yuan received the Ryerson Research Chair award from Ryerson University in Jan. 2005, the Research Excellence Award from the Faculty of Engineering and Applied Science of Ryerson University in 2004, the post-graduate scholarship from Natural Science and Engineering Research Council of Canada during 1997–1998, and the Teaching Excellence Award from Changzhou Institute of Technology in 1988. Dr. Yuan is a senior member of IEEE and a registered professional engineer in the province of Ontario, Canada.     

Tailoring Electron‐Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces

The interfacial electronic structure between oxide thin films and organic semiconductors remains a key parameter for optimum functionality and performance of next‐generation organic/hybrid electronics. By tailoring defect concentrations in transparent conductive ZnO films, we demonstrate the importance of controlling the electron transfer barrier at the interface with organic acceptor molecules such as C₆₀. A combination of electron spectroscopy, density functional theory computations, and device characterization is used to determine band alignment and electron injection barriers. Extensive experimental and first principles calculations reveal the controllable formation of hybridized interface states and charge transfer between shallow donor defects in the oxide layer and the molecular adsorbate. Importantly, it is shown that removal of shallow donor intragap states causes a larger barrier for electron injection. Thus, hybrid interface states constitute an important gateway for nearly barrier‐free charge carrier injection. These findings open new avenues to understand and tailor interfaces between organic semiconductors and transparent oxides, of critical importance for novel optoelectronic devices and applications in energy‐conversion and sensor technologies.     

Mathematical analysis of lead field expansions

The solution to the bioelectromagnetic inverse problem is discussed in terms of a generalized lead field expansion, extended to weights depending polynomially on the current strength. The expansion coefficients are obtained from the resulting system of equations which relate the lead field expansion to the data. The framework supports a family of algorithms which include the class of minimum norm solutions and those of weighted minimum norm, including FOCUSS (suitably modified to conform to requirements of rotational invariance). The weighted-minimum-norm family is discussed in some detail, making explicit the dependence (or independence) of the weighting scheme on the modulus of the unknown current density vector. For all but the linear case, and with a single power in the weight, a highly nonlinear system of equations results. These are analyzed and their solution reduced to tractable problems for a finite number of degrees of freedom. In the simplest magnetic field tomography (MFT) case, this is shown to possess expected properties for localized distributed sources. A sensitivity analysis supports this conclusion.     

Quantification of Temperature-Dependent Charge Separation and Recombination Dynamics in Non-Fullerene Organic Photovoltaics

Transient optical spectroscopy is used to quantify the temperature-dependence of charge separation and recombination dynamics in P3TEA:SF-PDI₂ and PM6:Y6, two non-fullerene organic photovoltaic (OPV) systems with a negligible driving force and high photocurrent quantum yields. By tracking the intensity of the transient electroabsorption response that arises upon interfacial charge separation in P3TEA:SF-PDI₂, a free charge generation rate constant of ≈2.4 × 10¹⁰ s⁻¹ is observed at room temperature, with an average energy of ≈230 meV stored between the interfacial charge pairs. Thermally activated charge separation is also observed in PM6:Y6, and a faster charge separation rate of ≈5.5 × 10¹⁰ s⁻¹ is estimated at room temperature, which is consistent with the higher device efficiency. When both blends are cooled down to cryogenic temperature, the reduced charge separation rate leads to increasing charge recombination either directly at the donor-acceptor interface or via the emissive singlet exciton state. A kinetic model is used to rationalize the results, showing that although photogenerated charges have to overcome a significant Coulomb potential to generate free carriers, OPV blends can achieve high photocurrent generation yields given that the thermal dissociation rate of charges outcompetes the recombination rate.     

Vanadium Doping Enhanced Electrochemical Performance of Molybdenum Oxide in Lithium‐Ion Batteries

Molybdenum trioxide (MoO₃) suffers from poor conductivity, a low rate capability, and unsatisfactory cycling stability in lithium‐ion batteries. The aliovalent ion doping may present an effective way to improve the electrochemical performances of MoO₃. Here, it is shown, by first‐principle calculations, that doping MoO₃ with V by 12.5% can modulate significantly electronic structure and provide a small diffusion barrier for enhancing the electrochemical performance of MoO₃. The ultralong Mo_0.88V_0.12O_2.94 nanostructures, which retain the h‐MoO₃ structure and present an exceptionally high conductivity and fast ionic diffusion due to the substitution of V, facilitating lithiation/delithiation behavior, and induce a fine nanosized structure with a reduced volume change are prepared. As a result, the stress and strain are alleviated during the Li‐ion intercalation/deintercalation processes, improving the cycling stability and rate capability. Such a large improvement in the electrochemical properties can be ascribed to the stabilizing effect of V, the small migration energy barrier, and short diffusion path, which arise from the introduction of V into MoO₃. The unique engineering strategy and facile synthesis route open up a new avenue in modifying and developing other species of electrode materials.