Zinc Diffusion into InP via a Narrow Gap from a Planar Zn<Subscript>3</Subscript>P<Subscript>2</Subscript>-Based Source

An original technology of zinc diffusion into InP via a narrow gap is described, which allows reproducible formation of p–n junctions with preset depth of doping and retained surface morphology of the doped layers. Using the proposed method, desired charge carrier distribution profiles in Zn-doped InP layers were obtained. It has been experimentally confirmed that the method of cross-sectional scanning electron microscopy allows to precision measure of the zinc diffusion depth.     

Vortex imaging in superconducting films by scanning hall probe microscopy

We have used a low noise Scanning Hall Probe Microscope (SHPM) to study vortex structures in superconducting films. The microscope has high magnetic field (2.9×10^–8T/Hz at 77K) and spatial resolution, 0.85m. Magnetic field profiles of single vortices in High T_c YBa₂Cu₃O_7– thin films have been successfully measured and the microscopic penetration depth of the superconductor has been extracted as a function of temperature. Flux penetration into the superconductor has been imaged in real time (8s/frame).     

Micro-milling performance of AISI 304 stainless steel using Taguchi method and fuzzy logic modelling

In this study, micro-milling of AISI 304 stainless steel with ball nose end mill was conducted using Taguchi method. The influences of spindle speed, feed rate and depth of cut on tool wear, cutting forces and surface roughness were examined. Taguchi’s signal to noise ratio was utilized to optimize the output responses. The influence of control parameters on output responses was determined by analysis of variance. In this study, the models describing the relationship between the independent variables and the dependent variables were also established by using regression and fuzzy logic. Efficiency of both models was determined by analyzing correlation coefficients and by comparing with experimental values. The results showed that both regression and fuzzy logic modelling could be efficiently utilized for the prediction of tool wear, cutting forces and surface roughness in micro-milling of AISI 304 stainless steel.     

Transport properties of LaSrNi1 − x ScxOy solid solutions

The formation of LaSrNiO₄-and LaSrScO₄-based solid solutions with the general stoichiometry LaSrNi_{1 ? x} Sc_xO₄ (0 < x < 1) has been studied in air at temperatures from 700 to 1300°C. According to x-ray diffraction results, the former solid solutions exist in the composition range 0 < x ≤ 0.2. Their lattice parameters have been determined, and their resistivity and thermoelectric power have been measured as functions of temperature. Oxygen release and absorption measurements at temperatures from 20 to 1000°C and oxygen partial pressures from 2 to 330 Pa suggest that the presence of scandium has a stabilizing effect on the oxygen sublattice of the solid solutions. The possible mechanisms of this effect are discussed.     

Experimental investigation of the current-induced breakage of metal-coated polymer films

We have experimentally studied the phenomenon of current-induced breakage of thin (∼20-to 30-nm-thick) metal films deposited onto poly(ethylene terephthalate) (PETP) and poly(propylene) (PP) substrates. Two mechanisms leading to the current-induced breakage of the metal film are established, which are characterized by different average threshold current densities: j _H ∼ 1.5 × 10¹⁰ A/m² and j _L ∼ 0.7 × 10¹⁰ A/m². The possible nature of these mechanisms is discussed.     

Edge electroluminescence in small-area silicon p +-n diodes heavily doped with boron: Analysis of model representations

The experimental results and model representations of the edge electroluminescence of two published studies for small-area silicon p ⁺-n diodes heavily doped with boron are analyzed. In one of these studies it was assumed that edge electroluminescence appears in the p ⁺ region of the diode, and in the other, in the n region of the diode. In the latter case, it was demonstrated that electroluminescence indeed arose in the n region and was caused predominantly by the radiative recombination of free excitons. It is shown that similar model concepts are also applicable to the other study. Based on several independent experimental studies (of edge photoluminescence, electroluminescence, and radiation absorption by free carriers), it is demonstrated that the linear or close-to-linear dependences of the edge-luminescence intensity on the excitation intensity, observed in single-crystal silicon at high injection levels, are caused by the close-to-linear dependences of the exciton concentration on the free-carrier concentration. The results of this study extend the capability of luminescence methods for determining the carrier lifetimes to the region of high injection levels.