电梯门机控制系统的运行曲线设计

为了实现电梯轿厢门的开门和关门快速且平稳地运行，介绍了一种基于高性能微型机的门机控制系统结构和门位移的检测原理，以门位移量作为控制系统的反馈量，对门机运行速度进行了分区设计。在高速附近的变化区，门机速度匀速变化时，进行了门机开门和关门控制曲线的计算，推导出运行位移与门机速度具有二次曲线的关系，进而对微型机控制的软件流程进行了设计，达到了门机高低速运行的平稳过渡。最后，给出了实际运行系统的主电路电压波形。     

一维ZnO纳米结构的电子场发射研究

在大量制备一维ZnO纳米结构的基础上,研究了这些纳米结构的场发射性能。对于四角状ZnO纳米结构,获得1.0m Ac/m2的电流密度只需要4.5V/μm的电场;对于线状Z nO纳米结构,获得1.0mAc/m 2的电流密度需要6.5V/μm的电场。由于其特殊的结构,四角状ZnO一维纳米结构在真空电子器件方面有很好的应用前景。     

机械合金化过程中Fe70B30粉末晶粒尺寸和微观应变的研究

用Ｘ射线和电镜研究了Ｆｅ＿（７０）Ｂ＿（３０）粉末经不同时间高能球磨后晶粒尺寸和微观应力的变化。在机械合金化过程中，粉末的Ｘ射线衍射谱的宽度随球磨时间的增加逐渐加宽，这是晶粒细化和内部微观应力共同作用的结果。Ｘ射线衍射结果表明：随着机械合金化的进行，粉末的晶粒尺寸逐渐减小，球磨初期晶粒尺寸下降较快，经１５ｈ球磨，晶粒尺寸为２５ｎｍ，机械合金化进行到一定时间后晶粒尺寸下降缓慢，８０ｈ球磨后晶粒尺寸可达５ｎｍ。在机械合金化过程中球磨所造成的微观应变不大，球磨初期粉末的内应力随球磨时间增加而增加，当粉末粒子尺寸很小时，随球磨的进行粉末中的微观应变显著下降。     

Enhanced electron emission from phosphorus-doped diamond-cladsilicon field emitter arrays

Undoped and phosphorus (P)-doped diamond-clad Si field emitter arrays have been successfully fabricated using microwave plasma chemical vapor deposition (MPCVD) technology. The electron emission from the blunt diamond-clad microtips are much higher than those for the pure Si tips with sharp curvature due to a lower work function. Furthermore, the characteristics of emission current against applied voltage for the P-doped diamond-clad tips show superior emission at lower field to the undoped ones. After the examination of Auger electron spectroscopy (AES) and electrical characteristics of as-grown diamond, such a significant enhancement of the electron emission from the P-doped diamond-clad tips is attributed to a higher electron conductivity and defect densities     

反应离化团束（RICB）法生长CN硬质薄膜

用反应离化团束（ＲＩＣＢ）法，以低分子量聚乙烯为蒸发材料，氨气为反应气体，在ＮａＣｌ（１００）和Ｓｉ（１００）衬底上淀积Ｃ－Ｎ薄膜，透射电子衍射（ＴＥＭ）分析表明薄膜中含有β－Ｃ３Ｎ４晶粒，Ｘ射线光电子谱（ＸＰＳ）和红外吸收谱（ＩＲ）表明存在Ｃ，Ｎ原子的化学键合。     

Multiple negative-differential-resistance (MNDR) phenomena of ametal-insulator-semiconductor-insulator-metal (MISIM)-like structurewith step-compositioned InxGa1-xAs quantum wells

In this paper, a new multiple negative-differential-resistance (MNDR) device based on a metal-insulator-semiconductor-insulator-metal (MISIM)-like structure with step-compositional In_xGa_1-x As quantum wells has been fabricated and demonstrated. The interesting MNDR phenomena are found in the current-voltage (I-V) characteristics of this device. At room temperature, the triple switching behaviours and quadruple stable operation states are obtained. In addition, the sixfold switching behaviors and a staircase-shaped I-V characteristic are observed at -105°C. A sequential carrier accumulation at InGaAs subwells and the potential lowering process are used to qualitatively explain the interesting MNDR phenomena. From the experimental results, it is shown that the studied device has good potential in multiple-valued logic applications     

聚合物复合材料填充剂的改性

在前人研究的基础之上，归纳总结了聚合物复合材料填充剂的种类，综述了对其进行表面改性的目的、条件、方法、工艺以及对改性结果的表征等。文章还分析了影响填充聚合物复合材料性能的因素，指出了今后发展的方向。     

无机膜的应用与展望

本文综述了无机膜的发展、制备方法和应用。