看准优势定项目得益环境促开发

总结了鹤峰县水电开发的成功经验在于有可开发的水力资源,有一流的投资环境,有建设者的奋斗精神及科学管理.     

Ca原子的Penning离化

用614.3nm染料激光照射以Ne为缓冲气体的Ca空心阴极灯,观察到了Ca原子的Pen-ning离化效应。对比在Li空心阴极灯中获得的光电流信号,解释了Ca原子的彭宁离化。     

Minimum switching control for adaptive tracking

The switching adaptive control method has been used for quite a few years to solve the adaptive stabilization and model reference adaptive control problems. However, a serious problem with the switching control method is that the number of ‘candidate’ controllers can potentially be very large, especially for multi‐input–multi‐output systems. In this paper, we consider a class of minimum‐phase multi‐input–multi‐output plants with some mild compactness assumptions. Given any polynomial reference input, we provide a switching control law which guarantees exponentially stability of the closed‐loop system with exponential tracking performance. The main contribution of the paper is that we give the minimum number of candidate controllers required for switching. In particular, the number is equal to 2 for single‐input–single‐output plants (one for each sign of the high‐frequency gain), and is equal to 2^m for m‐input–m‐output plants. That is, the number is independent of the degree and the relative degree of the plant. Copyright © 2006 John Wiley & Sons, Ltd.     

用于频率合成器的低损耗声表面波滤波器

简述了产生声表面波滤波器插入损耗的主要机理和获得低损耗的原则；介绍了根据此原则对１００～５００ＭＨｚ５种滤波器的研制过程和结果。实验表明，采用镜像阻抗连接换能器结构可达到３～４ｄＢ的低损耗，并成功地应用于频率合成器中。     

微光CCD摄像器件综合特性的分析与比较

ＣＣＤ的优良特性使其在微光电视技术领域得到了广泛运用。本文对各种微光ＣＣＤ摄像器件的综合特性例如信噪比、探测率、动态范围与计数模式等进行了详细的研究与对比，并得出基本结论。     

A Petri net based approach to modeling and scheduling for an FMSand a case study

In this paper, a timed-place Petri net (TPPN) model for flexible manufacturing systems (FMSs) is constructed, which contains two major submodels: the stationary transportation model; and the variable process flow model. For multiple automated guided vehicle (AGV) systems, the authors embed a simple rule and introduce a push-AGV strategy in a TPPN model to solve the collision and traffic jam problems of such vehicles. Since a firing sequence of the TPPN from the initial marking to the final marking can be seen as a schedule of the modeled FMS, by using an A^* based search algorithm, namely, the limited-expansion A algorithm, an effective schedule of the part processing can be obtained. To show the promising potential of the proposed work, a prototype FMS is used as a target system for implementation. The experiment results assert that the job-shop scheduling problem can always be satisfactorily solved     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device     

连续挤压法介绍

连续挤压法的特点是：挤压所需的压力是借助一个回转的摩擦轮来实现的。摩擦轮的轮缘上设有一个凹槽，其断面取决于原坯的断面（线材坯料）。本文将就这种工艺的设备和有关铝材生产阶段中的一些问题作一简介。     

局部施肥对植株生长及根系形态的影响

本文论述了局部施肥对植株地上部与地下部的影响。局部施肥促进了施肥区根系的发达 ,第一侧根与第二侧根较多 ,根的吸收表面积增多 ,根鲜重增加 ,对养分的吸收能力增强 ,但整个根系与地上部的干鲜重下降。     

Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².