基于频率采样技术的FIR数字滤波器优化设计

本文提出了一种FIR数字滤波器满意优化设计方法，将滤波器过渡带样本值作为优化变量，通过设计通带、过渡带和阻带性能指标满意度函数和综合满意度函数，构造出满意优化模型，并用本文提出的新量子遗传算法搜索满意解，FIR高通和带阻数字滤波器的设计结果表明，采用满意优化方法设计的FIR滤波器的性能优于传统方法。     

高保真单昌金属线材的研究进展及其应用前景

单昌连铸技术是一项新型金属型材料造技术,该技术的特点是可以制造无限长的单晶导电金属线材,为高保真通讯电缆的开发提供优质导材材料,本文对该技术的国内外研究进展及其开发应用前景进行了比较全面的评述。     

氮化硅基陶瓷材料抗穿甲破坏实验研究

陶瓷复合材料是轻型装甲战斗车辆的装甲材料之一 ,介绍了氮化硅陶瓷材料靶板的制备工艺和方法 ,以及使用其进行穿甲试验的全过程 ,试验和计算结果表明 ,氮化硅陶瓷靶以其良好的抗穿甲破坏能力成为了一种很有发展前途的装甲防护材料     

Electronic band structures and optical gain spectra of strainedwurtzite GaN-AlxGa1-xN quantum-well lasers

The electronic band structures, density-of-states, and optical gain spectra for wurtzite GaN-Al_xGa_1-xN quantum wells are studied theoretically based on the Hamiltonian derived using the k.p method. We investigate the dependence of the optical gain and transparent current density on the well width, barrier height, and strain using a numerical approach with high accuracy. The mole fraction of Al in the barrier material is progressively increased to study the effects of quantum confinement and compressive strain. A higher Al mole fraction in the barrier leads to improvement of the TE optical gain and suppression of the TM optical gain. Furthermore, we demonstrate that a reduction of the well width offers improved modal gain over all radiative current densities. We also predict a transparent current density of 250 A/cm² for the GaN-Al_xGa_1-x N single quantum-well (QW) structure. Our results suggest that a suitable combination of thin well width and large barrier height should be selected in improving the TE optical gain in wurtzite GaN-Al_x Ga_1-xN single QW     

动态聚焦电子枪的模拟与实验研究

动态聚焦技术是为了满足大屏幕高分辨率彩色显像管及高分辨率彩色显示管的发展需求而产生的一项新技术。在本文中，作者首先提出了一种动态聚焦电子枪结构，进行了数值计算与分析，制作了动态聚焦电子枪并装管实验。通过对实验样管的测试与分析。证实该枪性能良好，动态聚集效果明显。     

25英寸QPF动态聚焦电子枪的计算和分析

采用动态聚焦电子枪是提高ＣＲＴ全屏分辨率的有效手段。本文对一种应用于２５英寸彩色显像管的动态聚焦电子枪进行了设计、计算和分析，并且对实验枪进行了测试和分析。     

内电极对BZN基多层陶瓷电容器显微结构的影响

研究了银钯内电极对Ｂｉ２Ｏ３－ＺｎＯ－Ｎｂ２Ｏ５（ＢＺＮ）基多层陶瓷电容器（ＭＬＣ）的显微结构的影响及对ＢＺＮ复相陶瓷中立方焦绿石（α相）与单斜焦绿石（β相）的影响。利用扫描电镜观察晶粒的大小与形貌，利用能谱（ＥＤＸ）检测不同晶粒的组成，采用波谱观察Ａｇ迁移的情况，证明在ＭＬＣ中存在Ａｇ迁移。探讨了银钯内电极中Ａｇ对晶粒大小及组成的影响，进一步说明其对ＭＬＣ性能的影响。结果表明，内电极中的Ａｇ破坏了β相的稳定性，有利于α相的生成，这在显微结构上表现为大晶粒比例的增大，在相组成上表现为α相比例增加，在电性能上表现为温度系数变负。     

千兆比以太网技术

千兆比以太网是一种新型高速局域网，它一方面兼容传统以太网的主要标准结构，保护了用户先前的投资和系统配置，并使系统升级方便，以较实际的价格赢得了支持的发展。另一方面，它又采纳了光纤通道的低层协议以及其他一些在行兆比速率下应作的改进，使它获得了高速宽带性能。本文还列举了从快速以太网和ＦＤＤＩ向千兆比以太网迁移的网络配置策略。     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

The excition tunneling in ZnCdSe/ZnSe asymmetric double quantum well

Photoluminescence spectra of asymmetric double-quantum-well structure are studied in this paper. We show the excitation power dependence of exciton tunneling. Due to the different tunneling time of electrons and holes, space-charge effect is observed.