Photonic Crystal Palette of Binary Block Copolymer Blends for Full Visible Structural Color Encryption

Structural color (SC) arising from a periodically ordered self-assembled block copolymer (BCP) photonic crystal (PC) is useful for reflective-mode sensing displays owing to its capability of stimuli-responsive structure alteration. However, a set of PC inks, each providing a precisely addressable SC in the full visible range, has rarely been demonstrated. Here, a strategy for developing BCP PC inks with tunable structures is presented. This involves solution-blending of two lamellar-forming BCPs with different molecular weights. By controlling the mixing ratio of the two BCPs, a thin 1D BCP PC film is developed with alternating in-plane lamellae whose periodicity varies linearly from ≈46 to ≈91 nm. Subsequent preferential swelling of one-type lamellae with either solvent or non-volatile ionic liquid causes the photonic band gap of the films to red-shift, giving rise to full-visible-range SC correlated with the pristine nanostructures of the blended films in both liquid and solid states. The BCP PC palette of solution-blended binary solutions is conveniently employed in various coating processes, allowing facile development of BCP SC on the targeted surface. Furthermore, full-color SC paintings are realized with their transparent PC inks, facilitating low-power pattern encryption.     

Modus Operandi of Simultaneous Covering Synthesis from Precursor Heterogeneity for Shelled Nanorods for Multipotent Cancer Theranostics

The synthesis of nanostructures using homogeneous precursors in the solution phase is widely used to achieve uniformity and well‐defined morphological control. However, drawbacks such as the lack of diversity due to the limited reaction rate modulation exist. One‐step, core–shell nanorod formation using simultaneous covering synthesis using solid and ionic heterogeneous precursors is proposed in this study. A Te‐Bi₂Te₃/TeO₂ core–shell structure is successfully synthesized by precisely controlling various influencing factors, including concentration, temperature, and pH, and its physicochemical and photochemical properties are thoroughly investigated. The proposed nanostructure overcomes the oxidation susceptibility of Te and can be applied to multipotent cancer theranostics in vitro and in vivo in combination with computed tomography imaging.     

Highly Crystalline Soluble Acene Crystal Arrays for Organic Transistors: Mechanism of Crystal Growth During Dip‐Coating

The preparation of uniform large‐area highly crystalline organic semiconductor thin films that show outstanding carrier mobilities remains a challenge in the field of organic electronics, including organic field‐effect transistors. Quantitative control over the drying speed during dip‐coating permits optimization of the organic semiconductor film formation, although the kinetics of crystallization at the air–solution–substrate contact line are still not well understood. Here, we report the facile one‐step growth of self‐aligning, highly crystalline soluble acene crystal arrays that exhibit excellent field‐effect mobilities (up to 1.5 cm V^?1 s^?1) via an optimized dip‐coating process. We discover that optimized acene crystals grew at a particular substrate lifting‐rate in the presence of low boiling point solvents, such as dichloromethane (b.p. of 40.0 °C) or chloroform (b.p. of 60.4 °C). Variable‐temperature dip‐coating experiments using various solvents and lift rates are performed to elucidate the crystallization behavior. This bottom‐up study of soluble acene crystal growth during dip‐coating provides conditions under which one may obtain uniform organic semiconductor crystal arrays with high crystallinity and mobilities over large substrate areas, regardless of the substrate geometry (wafer substrates or cylinder‐shaped substrates).     

Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13 μm–0.16 μm to suit the intended application. The core processes are a two-step electron-beam lithography process using a three-layer resist and gate recess etching process using citric acid. An electron-beam lithography process was developed to fabricate a T-shaped gate electrode with a fine gate foot and a relatively large gate head. This was realized through the use of three-layered resist and two-step electron beam exposure and development. Citric acid-based gate recess etching is a wet etching, so it is very important to secure etching uniformity and process reproducibility. The device layout was designed by considering the electrochemical reaction involved in recess etching, and a reproducible gate recess etching process was developed by finding optimized etching conditions. Using the developed gate electrode process technology, we were able to successfully manufacture various monolithic microwave integrated circuits, including low noise amplifiers that can be used in the 28 GHz to 94 GHz frequency range.     

A Critical Review on Functionalization of Air‐Cathodes for Nonaqueous Li–O2 Batteries

This review reports on the most updated technological aspects of Li–air battery cathode materials. It provides the reader with recent developments, alongside critical views. The requirements for air‐cathodes, as well as the classification and characterization of carbon‐based and carbon‐free air cathodes, are listed. The effects of two major substituent groups of materials, namely carbon and advanced materials (metals, metal‐oxides, metal‐carbides, and metal‐nitrides) aimed at replacing carbon, are discussed in terms of their chemical and electrochemical stability. The report covers aspects of surface chemistry and structure influence on the electrolyte and discharge products stability. The review also reports on the efforts to suppress side reactions and deterioration of the polymeric binders (if a composite electrode is being considered). This is recognized as a means to enhance Li–air battery performance. The report concludes with an outlook and perspective, providing the readers with some insight on other factors and their impact on the long road toward a viable air‐cathode suitable for Li–air battery operations.     

A Multi‐Functional Highly Efficient Upconversion Luminescent Film with an Array of Dielectric Microbeads Decorated with Metal Nanoparticles

Upconversion nanoparticles (UCNPs) have been integrated with photonic platforms to overcome the intrinsically low quantum efficiency limit of upconversion luminescence (UCL). However, platforms based on thin films lack transferability and flexibility, which hinders their broader and more practical application. A plasmonic structure is developed that works as a multi‐functional platform for flexible, transparent, and washable near‐infrared (NIR)‐to‐visible UCL films with ultra‐strong UCL intensity. The platform consists of dielectric microbeads decorated with plasmonic metal nanoparticles on an insulator/metal substrate. Distinct improvements in NIR confinement, visible light extraction, and boosted plasmonic effects for upconversion are observed. With weak NIR excitation, the UCL intensity is higher by three orders of magnitude relative to the reference platform. When the microbeads are organized in a square lattice array, the functionality of the platform can be expanded to wearable and washable UCL films. The platform can be transferred to transparent, flexible, and foldable films and still emit strong UCL with a wide viewing angle.     

Pentacene-Based Low-Voltage Strain Sensors With PVP/$ hbox{Ta}_{2}hbox{O}_{5}$ Hybrid Gate Dielectrics

Field-controllable pentacene-semiconductor-based strain sensors were fabricated with hybrid gate dielectrics using polyvinyl phenol (PVP) and high-$k$ inorganic tantalum pentoxide $(hbox{Ta}_{2}hbox{O}_{5})$ onto polyethylene naphthalate films. The $hbox{Ta}_{2}hbox{O}_{5}$ gate-dielectric layer combined with a thin PVP layer to form very smooth and hydrophobic surfaces turns out to improve the molecular structures of pentacene films significantly. The PVP– $hbox{Ta}_{2}hbox{O}_{5}$ hybrid-gate-dielectric films exhibit a high dielectric constant of 19.27 and a leakage-current density of as low as 100 $hbox{nA/cm}^{2}$ . The sensors employing a thin-film-transistor-like Wheatstone bridge configuration able to operate at reduced voltage ($sim$4 V) show good device characteristics with a field-effect mobility of 1.89 $hbox{cm}^{2}/hbox{V} cdot hbox{s}$ and a threshold voltage of $-$0.5 V. The strain sensor characterized with bending at 45$^{circ}$ with respect to the bridge bias direction with different bending radii of 50-, 40-, 30-, 20-, and 8-mm displays output signals improved in linearity in a low range of operating voltages.