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以天然气为能源,用燃气机代替电动机驱动压缩机并充分利用发动机废热、工业余热以及低品位环境热量的采暖、空调装置——燃气压缩式热泵近年来发展迅速。美国燃气设备的总装机容量已达到1．2GW,日本燃气机热泵占全部燃气制冷设备的29％,总装机容量大约1GW,燃气机热泵在英国、法国、德国、瑞士等都得到了较快的发展与应用。中研究了以天然气为驱动能源的压缩式热泵的特点及能量利用率,分析并测试了该系统的运行特性及交工况特性,进行了各种工况及转速下的实验研究。结果表明,该系统具有较好的部分负荷特性、一次能源利用率及交工况特性,为一种绿色高效的供热空调系统。     

塔里木盆地塔中北坡奥陶系碳酸盐岩岩溶储层的形成机理

塔里木盆地塔中北坡奥陶系碳酸盐岩储层已成为该盆地油气勘探的重要目标之一,目前对于该岩溶储层的溶蚀机制尚存在争议。为此,基于沉积、层序与储层综合研究成果,结合微观分析测试与宏观地震资料分析结果,将该区碳酸盐岩岩溶储层划分为石灰岩溶蚀孔洞型、白云岩孔洞型和硅质岩裂缝孔洞型3种类型,并分别探讨了其形成机理。结果表明:(1)石灰岩溶蚀孔洞型储层纵向上分布在中奥陶通鹰山组上段和一间房组,而白云岩孔洞型储层主要发育在下奥陶统蓬莱坝组和鹰山组下段且厚度较大;(2)石灰岩溶蚀孔洞型储层形成于三级层序界面(低位期)岩溶作用,而白云岩孔洞型储层则主要形成于受三级层序界面岩溶作用控制的深埋藏白云石化作用,两者均分布在三级层序界面之下的高位体系域;(3)该区硅质岩储层的发育明显受断裂控制,是深部热液沿断层对石灰岩改造的结果,硅质岩储层及其热液溶蚀缝洞系统分布在断裂附近。进而推测:塔中北坡奥陶系除了发育上述3种储层类型以外,还发育台地边缘礁滩型储层。     

微型单色显像管图形畸变参量测试图像计算机分析

微型ＣＲＴ管“图形畸变”参量计算机测试需要解决系统分辨率难以满足精度要求的问题。本文对畸变扫描线特性进行了深入的分析，并对图像采集系统的误差引入进行了充分的讨论，提出了误差抑制的方法，突破了分辨率对获取高精度图形畸变参量的限制。     

纸张涂料的流平过程分析和影响因素

本文从流变学上分析了涂料在纸面上的流平过程，计算出流平时间。计算表明不可能达到完全流平状态，并指出影响流平性的因素及流平性能测量和评价。     

Fluidized Bed Granulation with Pvp K90 and Pvp K120

The characteristics and growth mechanisms of fluidized bed granules are dependent both on process variables and the grades of PVP binders used. Generally, an increase in the concentration, spraying rate and volume of binder solution caused an increase in granule size and a decrease in size distribution. These two factors will in turn affect the poured and tapped densities of granules. Granules prepared with PVP K90 solution appeared to grow by primary and secondary agglomeration to give an aggregate structure. Granules prepared with PVP K120 solution were formed through snowballing as the primary agglomeration process. This occurred at low binder solution concentration with secondary agglomeration taking place when the concentration of PVP K120 solution was increased.     

High SCR design for one-transistor split-gate full-featured EEPROM

A high source-coupling ratio design for full-featured EEPROM composed of one-transistor split-gate cells with a cell area of less than 22 F/sup 2/ is proposed. This is in contrast to a traditional cell that requires an extra select transistor and is not area economic when compared to the new design cell. In this design, the cell adopts poly-poly Fowler-Nordheim tunneling to erase, and an inhibited source voltage is used for the unselected cell to achieve bit erase. It has demonstrated excellent program and erase disturb margins and passed 300 k program/erase (P/E) cycling test. It was found that after P/E cycling stress, the cell gains a better erase disturb immunity.     

MONOS memory in sequential laterally solidified low-temperature poly-Si TFTs

A metal-oxide-nitride-oxide-polysilicon (MONOS) memory device fabricated by sequential lateral solidified (SLS) low-temperature polycrystalline silicon (poly-Si) technology on a glass substrate was investigated. The Si protrusions at grain boundaries (GBs) as a result of the SLS process can be well controlled and located along the width direction of the transistor. Protrusions at the GBs are utilized as emitting source to achieve a MONOS memory device with low operation voltage (/spl les/ 20 V), fast program/erase time, and wide V/sub th/ window by field-enhanced channel hot electron injection for programming and field-enhanced band-to-band tunneling-induced hot hole injection for erase. This is the first study to demonstrate a nonvolatile memory device in low-temperature poly-Si thin-film transistor (LTPS TFT) technology, which can be integrated with TFT-liquid crystal display, to reduce power consumption for mobile applications.