二垩英与资源回收-Ⅰ考虑到二垩英生成的资源与能量回收基础研究

目前在日本,存在大量工业垃圾,包括各种塑料制品,ASR(汽车破碎垃圾),含有毒PCB(多氯联苯)的110变压器和PVC(聚氯乙稀)制品等.而来自城市垃圾焚烧炉的废气含有大量能量.因此,在充分考虑环境、避免二垩英生成的同时,安全回收来自工业垃圾、城市和/或工业垃圾焚烧炉的资源和能量是个非常重要的课题,这也将对抑制CO2排放作出贡献.正确地阐明焚烧过程中二垩英的生成机理及详细研究含少量二垩英的焚烧废气在冷却过程中大量形成二垩英的临界温度是项很重要的工作.解决这个问题可有效实现资源和能量的回收.本报告介绍日本在二垩英排放方面目前采取的对策和存在的问题以及大阪大学为阻止二垩英生成所做的基础研究工作.     

Fine structure of transverse tubules and the sarcoplasmic reticulum at the myotendinous junction of stretched muscle fibers of the rat

The transverse (T) tubules and the sarcoplasmic reticulum (SR) at the myotendinous junction of stretched rat skeletal muscle were examined by conventional and intermediate voltage electron microscopy. Stretching induced a large cytoplasmic space devoid of myofibrils at the ends of lengthening fibers. In this space, irregularly running tubular elements were seen. They were connected both with subsarcolemmal caveolae and with T tubules traversing to the A-I junctional level of the preexisting myofibrils. The SR was arranged at regular intervals which were narrower than those of the adult sarcomere. This orderly spacing of the SR seems to indicate that they may play some role(s) in myofibril assembly and/or T tubule arrangement.     

Complexity of the color appearance of objects with nonuniform illumination

An inversion relationship is clarified between lightness and brightness, and also between chroma and colorfulness under nonuniform illumination with different illuminance levels (high and low) within the same visual field. Brightness (or colorfulness) of object color with low lightness (or chroma) under high illuminance level is perceived higher than that of another object color with high lightness (or chroma) under low illuminance level. Two color images are given for showing the inversion phenomena on brightness–lightness and colorfulness–chroma between object colors under different illuminance levels. These color images are useful for making researchers on color understand the differences in concept between brightness and lightness, and also between colorfulness and chroma. In particular, the concept of colorfulness is important, but difficult to understand. © 2007 Wiley Periodicals, Inc. Col Res Appl, 32, 372–377, 2007     

Latest advances in camcorder technology

Camcorders have been developed to be compact with high performance. Latest advancement of key technologies and devices such as digital signal processing LSI, six-layer printed circuit board with micro chips, high-speed power lens with linear motor, 103 K pixels 0.7-in LCD electronic viewfinder, and high-energy Li-ion battery are described. High-band format is also explained     

Focusing characteristics of a wide-striped laser diode integratedwith a microlens

We developed a wide-striped laser diode integrated with a microlens that provides good focusing characteristics through a small focusing spot. We calculated and demonstrated that a 60-μm-wide core and a 1.9-μm-high ridge is the best structure for fundamental index-guiding mode oscillation of a wide-striped laser diode. We integrated a wide-striped laser diode with the developed microlens in the Fresnel diffraction held, and demonstrated that a device with a 60-μm-wide core has a minimum focusing spot width of 2.0 μm in the horizontal direction. Also, we estimated the wavefront in the Fresnel diffraction field from the working distance error of a lens designed for a collimated incident beam, and showed that the working distance error, focusing spot width, and sidelobe can be improved by this estimated wavefront     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

90-nm process-variation adaptive embedded SRAM modules with power-line-floating write technique

The power consumption of a low-power system-on-a-chip (SoC) has a large impact on the battery life of mobile appliances. General SoCs have large on-chip SRAMs, which consume a large proportion of the whole LSI power. To achieve a low-power SoC, we have developed embedded SRAM modules, which use some low-power SRAM techniques. One technique involves expanding the write margin; another is a power-line-floating write technique, which enables low-voltage write operation. The power-line-floating write technique makes it possible to lower the minimum operating supply voltage by 100 mV. The other techniques involve using a process-variation-adaptive write replica circuit and reducing leakage current. These techniques reduce active power during write operations by 18% and reduce active leakage of the word-line driver by 64%. The prototype SRAM modules achieve 0.8-V operation, and a 512-kb SRAM module achieves 48.4-/spl mu/A active leakage and 7.8-/spl mu/A standby leakage with worst-leakage devices.     

Scientific Screening of Raw Diamond for an Ultraprecision Cutting Tool with High Durability

The wide scattering in tool life of natural mono-crystalline diamond tools is considered to depend on intrinsic crystalline defects due to nitrogen impurities in raw diamond. In this paper, the correlation was investigated between the amounts and types of the impurity evaluated by infrared absorption (IRA) and the crater wear and chipping resistances. As a result, diamonds including less total amount of impurity show larger wear resistance and that with larger amount of B2-aggregates show larger chipping resistance. This suggests that the inspection by IRA can be a useful method for screening of raw diamond for highly durable cutting tools.