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41.
在上海地铁研究中,我们发现了许多使用者的不满。这些不满来自于设计师对使用者的缺乏了解和缺乏关注。通过对上海地铁真实的使用者、真实的地点和真实的时间的调研,我们分析出25项上海地铁使用者的需求。并提出希望设计师能够从这些使用者的需求出发,去作为使用者带来良好体验的设计。  相似文献   
42.
吸入短寿命氡子体动物肺组织剂量与体重关系的探讨   总被引:1,自引:1,他引:0  
本文介绍吸入短寿命氡子体的不同种动物肺组织吸收剂量与体重的关系。实验结果表明,吸收剂量随体重的增加而减小。  相似文献   
43.
在不同酸度下巯基棉可以从溶液中富集和分离Au、As、Ag、Br、Cu、Ca Co、InHg、Ni、Se、Sb、Sn、Pb、W、Fe和In等30多种元素。由于用巯基棉吸附待测元素后不必洗脱,因此大大提高了富集能力,可用于海水、地下水、地表水及工业废水中一些元素的测量。本文用巯基棉富集后进行中子活化分析测定水泥及其浸出水中的汞。  相似文献   
44.
宣钢l260m^3高炉大修改造时将炉容扩大到l350m^3,对高炉本体系统设备及冷却系统、自动控制及检测系统进行了全面的改造更新,在炉腹、炉腰及炉身下部高热负荷区域采用铜冷却壁,取消炉身中上部铸铁冷却壁凸台,并采用薄内衬等先进、适用、可靠、成熟的技术。  相似文献   
45.
Nanorod field-effect transistors (FETs) that use multiple Mg-doped ZnO nanorods and a SiO2 gate insulator were fabricated and characterized. The use of multiple nanorods provides higher on-currents without significant degradation in threshold voltage shift and subthreshold slopes. It has been observed that the on-currents of the multiple ZnO nanorod FETs increase approximately linearly with the number of nanorods, with on-currents of ~1 muA per nanorod and little change in off-current (~4times10-12). The subthreshold slopes and on-off ratios typically improve as the number of nanorods within the device channel is increased, reflecting good uniformity of properties from nanorod to nanorod. It is expected that Mg dopants contribute to high n-type semiconductor characteristics during ZnO nanorod growth. For comparison, nonintentionally doped ZnO nanorod FETs are fabricated, and show low conductivity to compare with Mg-doped ZnO nanorods. In addition, temperature-dependent current-voltage characteristics of single ZnO nanorod FETs indicate that the activation energy of the drain current is very low (0.05-0.16 eV) at gate voltages both above and below threshold  相似文献   
46.
Optical absorption and photoluminescence of Ca3(VO4)2 single crystal grown by a floating-zone technique and containing Nd3+ ions were investigated. High absorption coefficients and broadening of most absorption bands are present at 300 K, while substructures in some of the same bands can be evidenced at 12 K. Most features of measured spectra are characteristic of random occupation of more than a single Ca2+ site by the Nd3+ ion and of distortions provoked by different charge compensation mechanisms involving oxygen vacancies promotion in the crystal lattice. Nd3+ optical properties were studied by using the Judd-Ofelt theory to calculate the spectral parameters relevant for laser applications.  相似文献   
47.
It is well known that the system performance for an indirect-field-oriented-control induction motor drive degrades under the variation of rotor resistance and in the presence of external load torque. In this paper, a plug-in robust compensator for speed and position control enhancement of an indirect-field-oriented-control induction machine drive is developed. In the case where a controller for the induction machine already exists or is in operation with satisfactory nominal tracking performance, this plug-in compensator, designed using the H/sub /spl infin// loop-shaping techniques, can be plugged into the existing controller without affecting the already satisfactory nominal tracking performance of the existing closed-loop system but with the capability to improve the system performance under plant parameter variations and in the presence of external disturbances. Simulation and experimental results are given to validate the proposed plug-in robust compensator.  相似文献   
48.
A ternary blend system comprising poly(cyclohexyl methacrylate) (PCHMA), poly(α‐methyl styrene) (PαMS) and poly(4‐methyl styrene) (P4MS) was investigated by thermal analysis, optical and scanning electron microscopy. Ternary phase behaviour was compared with the behaviour for the three constituent binary pairs. This study showed that the ternary blends of PCHMA/PαMS/P4MS in most compositions were miscible, with an apparent glass transition temperature (Tg) and distinct cloud‐point transitions, which were located at lower temperatures than their binary counterparts. However, in a closed‐loop range of compositions roughly near the centre of the triangular phase diagram, some ternary blends displayed phase separation with heterogeneity domains of about 1 µm. Therefore, it is properly concluded that ternary PCHMA/PαMS/P4M is partially miscible with a small closed‐loop immisciblity range, even though all the constituent binary pairs are fully miscible. Thermodynamic backgrounds leading to decreased miscibility and greater heterogeneity in a ternary polymer system in comparison with the binary counterparts are discussed. © 2003 Society of Chemical Industry  相似文献   
49.
Stabilization of singularly perturbed fuzzy systems   总被引:6,自引:0,他引:6  
This paper presents some novel results for stabilizing singularly perturbed (SP) nonlinear systems with guaranteed control performance. By using Takagi-Sugeno fuzzy model, we construct the SP fuzzy (SPF) systems. The corresponding fuzzy slow and fast subsystems of the original SPF system are also obtained. Two fuzzy control designs are explored. In the first design method, we propose the composite fuzzy control to stabilize the SPF subsystem with H/sup /spl infin// control performance. Based on the Lyapunov stability theorem, the stability conditions are reduced to the linear matrix inequality (LMI) problem. The composite fuzzy control will stabilize the original SP nonlinear systems for all /spl epsiv//spl isin/(0,/spl epsiv//sup */) and the upper bound /spl epsiv//sup */ can be determined. For the second design method, we present a direct fuzzy control scheme to stabilize the SP nonlinear system with H/sup /spl infin// control performance. By utilizing the Lyapunov stability theorem, the direct fuzzy control can guarantee the stability of the original SP nonlinear systems for a given interval /spl epsiv//spl isin/[/spl epsiv/_,/spl epsiv/~]. The stability conditions are also expressed in the LMIs. Two SP nonlinear systems are adopted to demonstrate the feasibility and effectiveness of the proposed control schemes.  相似文献   
50.
The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.  相似文献   
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