Amplifier linearization using compact microstrip resonant cell-theory and experiment

This paper presents a novel technique for reducing the intermodulation distortions (IMDs) in power amplifiers. In this method, both second- and third-harmonic components generated by the transistor are reflected back simultaneously by the compact microstrip resonant cell (CMRC) at the input port with proper phases to mix with the fundamental signal for the reduction of IMDs. A rigorous mathematical analysis on the effectiveness of multiharmonic reflections has been formulated and derived using the Volterra series. Moreover, the delay mismatch factor of the proposed method is analytically studied and the result shows that a better tolerance to the delay error can be achieved by using CMRC circuitry. Standard two-tone test measurements reveal 32- and 22-dB reductions for the third-order IMD and fifth-order IMD, respectively, without affecting the fundamental signal at 2.45 GHz. Meanwhile, the proposed approach gives a peak power added efficiency of 53% with 11.5 dB transducer gain and 15 dBm output power for a single-stage SiGe bipolar junction transistor. The adjacent channel power ratio (ACPR) is -55dBc for a data rate of 384-kb/s quadrature phase shift keyed modulated signal with 2-MHz spanning bandwidth, and this ACPR is maintained for a broad range of output power level.     

亚共晶Al-Cu系激光引燃自蔓延合金微观表征及性能研究

对亚共晶Al-Cu粉末压坯,通过不同功率进行激光引燃自蔓延烧结。用OM、SEM、XRD进行微观组织表征,并对烧结合金进行耐磨等性能测试。结果表明：烧结后物相由CuAlO2、Al4Cu9、Al2O3等构成,组织为树枝状晶和胞状晶相间分布。在激光输出功率为950W,烧结后密度最大,为2.8101g/cm3,致密性达到最高点,耐磨性最佳,相对失重为3.66%。     

Transient Charging and Discharging Behaviors of Border Traps in the Dual-Layer HfO2/SiO2 High- κ Gate Stack Observed by Using Low-Frequency Charge Pumping Method

Transient charging and discharging of border traps in the dual-layer HfO₂/SiO₂ high-kappa gate stack have been extensively studied by the low-frequency charge pumping method with various input pulse waveforms. It has been demonstrated that the exchange of charge carriers mainly occurs through the direct tunneling between the Si conduction band states and border traps in the HfO₂ high-kappa dielectric within the transient charging and discharging stages in one pulse cycle. Moreover, the transient charging and discharging behaviors could be observed in the time scale of 10^-8- 10^-4 s and well described by the charge trapping/detrapping model with dispersive capture/emission time constants used in static positive bias stress. Finally, the frequency and voltage dependencies of the border trap area density could also be transformed into the spatial and energetic distribution of border traps as a smoothed 3-D mesh profiling     

数据库在专家系统中的应用

本文介绍一个将多种数据信息，控制信息引入到数据库中进行管理控制的专家系统，整个系统的运行靠数据库来驱动，系统调整起来非常方便，运行效率得到了提高，结构得到了优化。     

An Electroabsorption Modulator Monolithically Integrated with a Semiconductor Optical Amplifier and a Dual-Waveguide Spot-Size Converter

A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spot-size converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology.A 1550～1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved.The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°×18.0°,respectively,resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.     

锥形图形衬底上氮化镓薄膜生长和表征

GaN films are grown on cone-shaped patterned sapphire substrates(CPSSs)by metal-organic chemical vapor deposition,and the influence of the temperature during the middle stage of GaN growth on the threading dislocation(TD)density of GaN is investigated.High-resolution X-ray diffraction(XRD)and cathodeluminescence(CL)wereusedtocharacterizetheGaNfilms.TheXRDresultsshowedthattheedge-typedislocation density of GaN grown on CPSS is remarkably reduced compared to that of GaN grown on conventional sapphire substrates(CSSs).Furthermore,whenthegrowthtemperatureinthemiddlestageofGaNgrownonCPSSdecreases,the full width at half maximum of the asymmetry(102)plane of GaN is reduced.This reduction is attributed to the enhancement of vertical growth in the middle stage with a more triangular-like shape and the bending of TDs.The CL intensity spatial mapping results also showed the superior optical properties of GaN grown on CPSS to those of GaN on CSS,and that the density of dark spots of GaN grown on CPSS induced by nonradiative recombination is reduced when the growth temperature in the middle stage decreases.     

Optimal base-station locations in two-tiered wireless sensor networks

We consider generic two-tiered wireless sensor networks (WSNs) consisting of sensor clusters deployed around strategic locations, and base-stations (BSs) whose locations are relatively flexible. Within a sensor cluster, there are many small sensor nodes (SNs) that capture, encode, and transmit relevant information from a designated area, and there is at least one application node (AN) that receives raw data from these SNs, creates a comprehensive local-view, and forwards the composite bit-stream toward a BS. This paper focuses on the topology control process for ANs and BSs, which constitute the upper tier of two-tiered WSNs. Since heterogeneous ANs are battery-powered and energy-constrained, their node lifetime directly affects the network lifetime of WSNs. By proposing algorithmic approaches to locate BSs optimally, we can maximize the topological network lifetime of WSNs deterministically, even when the initial energy provisioning for ANs is no longer always proportional to their average bit-stream rate. The obtained optimal BS locations are under different lifetime definitions according to the mission criticality of WSNs. By studying intrinsic properties of WSNs, we establish the upper and lower bounds of maximal topological lifetime, which enable a quick assessment of energy provisioning feasibility and topology control necessity. Numerical results are given to demonstrate the efficacy and optimality of the proposed topology control approaches designed for maximizing network lifetime of WSNs.     

Constructing Internet coordinate system based on delay measurement

In this paper, we consider the problem of how to represent the locations of Internet hosts in a Cartesian coordinate system to facilitate estimation of network distances among arbitrary Internet hosts. We envision an infrastructure that consists of beacon nodes and provides the service of estimating network distance between pairs of hosts without direct delay measurement. We show that the principal component analysis (PCA) technique can effectively extract topological information from delay measurements between beacon hosts. Based on PCA, we devise a transformation method that projects the raw distance space into a new coordinate system of (much) smaller dimensions. The transformation retains as much topological information as possible and yet enables end hosts to determine their coordinates in the coordinate system. The resulting new coordinate system is termed as the Internet Coordinate System (ICS). As compared to existing work (e.g., IDMaps and GNP), ICS incurs smaller computation overhead in calculating the coordinates of hosts and smaller measurement overhead (required for end hosts to measure their distances to beacon hosts). Finally, we show via experiments with both real-life and synthetic data sets that ICS makes robust and accurate estimates of network distances, incurs little computational overhead, and its performance is not susceptible to the number of beacon nodes (as long as it exceeds a certain threshold) and the network topology.     

利用设计模式“类工厂”实现模板页面技术

主要介绍在Asp．net中利用设计模式的类工厂以及C#中类的继承，实现模板页面技术，达到页面级代码重用，解决在B／S项目开发中，相同相似功能页面存在的前台重复开发问题。提高开发效率，降低开发成本。     

Experimental investigation of hollow-core photonic crystal fibers with five photonic band-gaps

The hollow-core photonic crystal fibers （HC-PCFs） with integrity structure have been fabricated with an improved twice stack-and-draw technique. The transmission spectrum shows that five photonic band-gaps within 450-1100 nm have been obtained.And the green fight transmission in the HC-PCFs has been observed remarkably.