2-D WO3 decorated with Pd for rapid gasochromic and electrical hydrogen sensing

The ultrathin two-dimensional (2D) nanomaterials display unique properties owing to their ultrahigh specific surface area and strong quantum confinement of electrons in two dimensions. In this work, we fabricated a rapid gasochromic and electrical hydrogen sensing system containing 2D WO₃ and Pd nanoparticles. 2D WO₃ nano-plates (NP) are synthesized using sol–gel method and Pd nanoparticles are coated on WO₃ by green photochemical deposition method. The sensor is fabricated by dispersing the 2D WO₃/Pd composite on filter paper. In presence of hydrogen gas, 2D WO₃/Pd composite produces visible change in color from brown to dark blue. With the fabricated sensor, as low as 0.1% H₂ gas in air at room temperature can be easily detected using electrical sensing scheme whereas for higher concentration from 1 to 100%, eye readable gasochromic scheme can be utilized. The use of 2D WO₃ decreased the response time in great deal compared to WO₃ nanoparticles indicating the advantage of 2D structure in fabricating rapid response H₂ sensors. The proposed method is simple and can be easily employed to large scale fabrication system for commercial applications.     

Synthesis and optical characterization of novel Sr3Ga2O6:Eu phosphor

Alkaline earth metal gallets have been identified as an important ceramic material. The crystal chemistry of many of these gallets is well explored; however, very rare studies regarding optical properties of rare earth (RE) ions doped in such gallets, particularly in Sr₃Ga₂O₆ host, have been carried out. The present study reports on synthesis and characterization of novel Sr₃Ga₂O₆:Eu³⁺ phosphors. The phosphors have been synthesized using a conventional solid state reaction method. Crystal structure, morphology and luminescence properties (excitation, emission and CIE coordinate) of these phosphors have been studied as a function of sintering temperature and Eu³⁺ concentration. X-ray diffraction study reveals that the phosphor sintered at low temperature (900 °C) contains an impurity phase which is removed at higher sintering temperatures and results into cubic crystalline phase of Sr₃Ga₂O₆. Particle size of the phosphor increases with an increase in sintering temperature which results to a red shift in the peak position of excitation band lying in a broad range from 250 to 370 nm. Optimum emission intensity is attained for 0.12 mol% concentration of Eu³⁺ ions; above this concentration, a quenching in emission intensity is observed.     

Preparation and characterization of antifouling poly(vinylidene fluoride) blended membranes

Poly(vinylidene fluoride) (PVDF) membranes have been widely used in microfiltration and ultrafiltration because of their excellent chemical resistance and thermal properties. However, PVDF membranes have exhibited severe membrane fouling because of their hydrophobic properties. In this study, we investigated the antifouling properties of PVDF blended membranes. Antifouling PVDF blended membranes were prepared with a PVDF‐g‐poly(ethylene glycol) methyl ether methacrylate (POEM) graft copolymer. The PVDF‐g‐POEM graft copolymer was synthesized by the atom transfer radical polymerization (ATRP) method. The chemical structure and properties of the synthesized PVDF‐g‐POEM graft copolymer were determined by NMR, Fourier transform infrared spectroscopy, and gel permeation chromatography. To investigate the antifouling properties of the membranes, we prepared microfiltration membranes by using the phase‐inversion method, which uses various PVDF/PVDF‐g‐POEM concentrations in dope solutions. The pure water permeabilities were obtained at various pressures. The PVDF/PVDF‐g‐POEM blended membranes exhibited no irreversible fouling in the dead‐end filtration of foulants, including bovine serum albumin, sodium alginate, and Escherichia coli broth. However, the hydrophobic PVDF membrane exhibited severe fouling in comparison with the PVDF/PVDF‐g‐POEM blended membranes. © 2011 Wiley Periodicals, Inc. J Appl Polym Sci, 2011     

Effect of field enhancement on inorganic powder electroluminescence using short carbon nanotubes

Inorganic powder electroluminescence (IPEL) devices with the insertion of a carbon nanotube (CNT) layer were investigated to verify the effect of the increased local field produced by CNTs on electroluminescence (EL). To increase the field strength effectively, the CNTs were shortened using the cryogenic crushing method. IPEL devices with the insertion of a short CNT layer exhibited an increase in brightness and efficiency with increasing amount of CNTs. The local field enhancement by CNTs, further enlarged by the triple-junction, could increase the field strength applied to the phosphor, resulting in improved EL performance. In addition, short CNTs in an EL device can lead to field enhancement without an unintentional current flowing into the device.     

High-performance field emission from a carbon nanotube carpet

We have created a field emitter composed of a carbon nanotube (CNT) yarn, which was prepared by direct spinning through chemical vapor deposition and then formed into a carpet structure by tying the yarn to a conductive substrate before cutting it. The structure of the carpet is arranged to induce the tips of the CNT yarn to protrude toward the anode for maximum electron emission. The turn-on field, threshold field, and field enhancement factor of the device are 0.33, 0.48 V/μm, and 19,141, respectively. Extremely low operating electric fields and a high field enhancement factor result from the high density of CNT emitters with high crystallinity, the electrically good contact between the emitters and the substrate, and the effects of the multistage structure. The emission is stable even at a high current density of 2.13 mA/cm², attributed to the strong adhesion between the emitters and the substrate. The emission performance is found to be customizable by adjusting the structure, for example, the CNT pile density. These results are relevant for practical applications, such as large-area flat-panel displays, large-area low-voltage lamps, and X-ray sources.     

Hydrogenation of carbon monoxide to methane over mesoporous nickel-M-alumina (M = Fe,Ni, Co,Ce, and La) xerogel catalysts

Mesoporous nickel(30 wt%)-M(10 wt%)-alumina xerogel (30Ni10MAX) catalysts with different second metal (M = Fe, Ni, Co, Ce, and La) were prepared by a single-step sol–gel method for use in the methane production from carbon monoxide and hydrogen. In the methanation reaction, yield for CH₄ decreased in the order of 30Ni10FeAX > 30Ni10NiAX > 30Ni10CoAX > 30Ni10CeAX > 30Ni10LaAX. Experimental results revealed that CO dissociation energy of the catalyst and H₂ adsorption ability of the catalyst played a key role in determining the catalytic performance of 30Ni10MAX catalyst in the methanation reaction. Optimal CO dissociation energy of the catalyst and large H₂ adsorption ability of the catalyst were favorable for methane production. Among the catalysts tested, 30Ni10FeAX catalyst with the most optimal CO dissociation energy and the largest H₂ adsorption ability exhibited the best catalytic performance in terms of conversion of CO and yield for CH₄ in the methanation reaction. The enhanced catalytic performance of 30Ni10FeAX was also due to a formation of nickel–iron alloy and a facile reduction.     

Low-bandgap copolymers consisting of 2,1,3-benzoselenadiazole and carbazole derivatives with thiophene or selenophene π-bridges

Two donor–acceptor-type alternating copolymers consisting of 2,1,3-benzoselenadiazole and carbazole derivatives with thiophene or selenophene π-bridges were synthesized by Suzuki cross-coupling polymerization, and their optical, electrochemical, and photovoltaic properties were compared. The selenophene π-bridged copolymer (PCz-DSeBSe) exhibited a smaller band-gap (1.82 eV) than the thiophene-bridged polymer (PCz-DTBSe; 1.89 eV). PCz-DSeBSe also showed a deeper highest occupied molecular orbital energy level (−5.36 eV) than PCz-DTBSe (−5.20 eV). Moreover, the PCz-DSeBSe thin film showed higher crystallinity and hole mobility than the PCz-DTBSe thin film. Organic photovoltaic devices were fabricated using the polymers as the donors and [6,6]-phenyl-C₇₁-butyric acid methyl ester (PC₇₁BM) as the acceptor. The device using PCz-DSeBSe showed a higher open circuit voltage (V_oc), short circuit current density (J_sc), and power conversion efficiency (PCE) than that using PCz-DTBSe. The fabricated indium tin oxide/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/PCz-DSeBSe:PC₇₁BM/LiF/Al device showed the maximum PCE of 2.88% with a J_sc of 7.87 mA/cm², an V_oc of 0.80 V, and a fill factor of 0.50 under AM 1.5G irradiation (100 mW/cm²).     

Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n‐inp schottky barrier interface

In this work, we have investigated the electrical properties of Au/n‐InP contacts with a thin layer of polyvinyl alcohol (PVA) as an interlayer. The current–voltage (I–V) and capacitance–voltage (C–V) measurements are carried out in the temperature range of 175–425 K. The Au/PVA/n‐InP Schottky structure show nonideal behaviors and indicates the presence of a nonuniform distribution of interface states. The temperature dependent interface states densities (N_SS), ideality factor and barrier height are obtained. An abnormal decrease in zero‐bias barrier height (BH) and increase in the ideality factor ( ) with decreasing temperature have been explained on the basis of the thermionic emission theory with Gaussian distribution (GD) of the BHs due to the BH inhomogeneities. The experimental I–V characteristics of Au/PVA/n‐InP Schottky diode has revealed the existence of a double GD with mean BH values of ( ) of 1.246 and 0.899 eV and standard deviation ( ) of 0.176 and 0.137 V, respectively. Consequently, the modified conventional activation energy versus plot gives and Richardson constants ( ) and the values are 1.17 and 0.71 eV and 9.9 and 6.9 A/cm² K², respectively, without using the temperature coefficient of the BH. The effective Richardson constant value of 9.9 A/cm² K² is very close to the theoretical value of 9.4 A/cm² K² for n‐InP. The discrepancy between Schottky barrier heights estimated from I–V and C–V measurements is also discussed. © 2013 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2014 , 131, 39773.     

Characterization of Cu(In,Ga)Se2 thin films prepared by RF magnetron sputtering using a single target without selenization

Cu(In_1?xGa_x)Se₂ (CIGS) thin films were prepared using a single quaternary target by RF magnetron sputtering. The effects of deposition parameters on the structural, compositional and electrical properties of the films were examined in order to develop the deposition process without post-deposition selenization. From X-ray diffraction analysis, as the substrate temperature and Ar pressure increased and RF power decreased, the crystallinity of the films improved. The scanning electron microscopy revealed that the grains became uniform and circular shape with columnar structure with increasing the substrate temperature and Ar pressure, and decreasing the RF power. The carrier concentration of CIGS films deposited at the substrate temperature of 500 °C was 2.1 × 10¹⁷ cm^?3 and the resistivity was 27 Ω cm. At the substrate temperature above 500 °C, In and Se contents in CIGS films decreased due to the evaporation and it led to the deterioration of crystallinity. It was confirmed that CIGS thin films deposited at optimal condition had similar atomic ratio to the target value even without post-deposition selenization process.     

Combustion Synthesis of AlON–BN Composites under Low Nitrogen Pressure

Hexagonal boron nitride (hBN) and aluminum oxinitride (AlON) composites were synthesized by combustion reaction of powder mixtures of Al–B₂O₃–AlN systems under a low pressure of nitrogen gas (0.5 MPa). Explosive combustion reaction of Al–B₂O₃ systems under the same nitrogen pressure produced alumina, aluminum borate, AlN, and AlON depending on the binary mixing ratio, but no trace of BN phases could be identified. Most of the elemental boron product remained unreacted and amorphous. On the other hand, AlN addition as a diluent in the range of 15–30 wt% was effective in producing hBN phase and forming AlON–BN composites. In the composition range of the ternary mixture of Al, B₂O₃, and AlN, where significant BN formation was identified, the primary role of AlN was to react with B₂O₃ to produce BN and α-Al₂O₃. The temperature profile obtained during the combustion reaction by a thermocouple imbedded in the middle of the powder bed revealed that the initial nitridation reaction of aluminum metal provides the heat required for the combustion reaction, creating a state of a "chemical oven." The reaction product, α-Al₂O₃, reacted subsequently with AlN to produce AlON phases to give final AlON–BN composites. The combustion reaction was highly unstable and followed a mixed mode with a regularly reversing spinning mode for aluminum nitridation reaction in the surface region and an oscillatory mode for the BN formation reaction in the subsurface region.