Capacity of large hybrid erasure networks with random node distribution

The Gupta–Kumar’s nearest-neighbor multihop routing with/without infrastructure support achieves the optimal capacity scaling in a large erasure network in which n wireless nodes and m relay stations are regularly placed. In this paper, a capacity scaling law is completely characterized for an infrastructure-supported erasure network where n wireless nodes are randomly distributed, which is a more feasible scenario. We use two fundamental path-loss attenuation models (i.e., exponential and polynomial power-laws) to suitably model an erasure probability. To show our achievability result, the multihop routing via percolation highway is used and the corresponding lower bounds on the total capacity scaling are derived. Cut-set upper bounds on the capacity scaling are also derived. Our result indicates that, under the random erasure network model with infrastructure support, the achievable scheme based on the percolation highway routing is order-optimal within a polylogarithmic factor of n for all values of m.     

The leakage current improvement in an ultrashallow junction NMOSwith Co silicided source and drain

The leakage current characteristics of the cobalt silicided NMOS transistors with a junction depth of 800 Å have been studied. In order to minimize the junction leakage current, the thickness of the CoSi₂ layer should he controlled under 300 Å and the Si surface damage induced by the gate spacer etch should be minimized. The post furnace annealing after the second silicidation by the rapid thermal annealing (RTA) process also affected the leakage current characteristics. The gate induced drain leakage (GIDL) current was not affected by the lateral encroachment of CoSi₂ layer into the channel direction when the gate spacer length was larger than 400 Å     

Dynamic Oscillation via Negative Differential Resistance in Type III Junction Organic/Two-Dimensional and Oxide/Two-Dimensional Transition Metal Dichalcogenide Diodes

Among many of 2D semiconductor-based devices, type III PN junction diodes are given special attentions due to their unique function, negative differential resistance (NDR). However, it has been found uneasy to achieve well-matched type III PN junctions from 2D–2D van der Waals heterojunctions. Here, the authors present other alternatives of type III heterojunctions, using 2D p-MoTe₂/organic n-type dipyrazino[2,3-f:2′,3′-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile (HAT-CN) and 2D p-WSe₂/n-MoO_x systems. Those junction diodes appear to well-demonstrate static and dynamic NDR behavior via resonant tunneling and electron–hole recombination. Extended to an inverter circuit, p-MoTe₂/n-HAT-CN diode enables multilevel inverter characteristics as monolithically integrated with p-MoTe₂ channel field effect transistor. The same NDR diode shows dynamic LC oscillation behavior under a constant DC voltage, connected to an external inductor. From p-WSe₂/n-MoO_x oxide diode, similar NDR behavior to those of p-MoTe₂/n-HAT-CN is again observed along with LC oscillations. The authors attribute these visible oscillation results to high peak-to-valley current ratios of their organic or oxide/2D heterojunction diodes.     

Rapidly tunable optical add-drop multiplexer utilising relaxed beam splitters

A polarisation-independent four-port electro-optic tunable filter in the 1530 nm wavelength regime utilising non-polarising relaxed beam splitters and strain-induced polarisation converters on LiNbO₃ with 16 nm tuning range and 46 ns tuning speed is reported.     

Novel T-rail electrodes for substrate removed low-voltage high-speed GaAs/AlGaAs electrooptic modulators

A novel traveling-wave electrode utilizing capacitively loaded T-rail elements was developed for low-voltage high-speed substrate-removed GaAs/AlGaAs electrooptic modulators. Electrodes with varying dimensions were fabricated and characterized. Electrode phase velocity, characteristic impedance, loss coefficient, and capacitive loading were extracted from the measured s-parameters up to 40 GHz. Electrode was also simulated using a finite-element solver. The measured and calculated electrode capacitance values were found to be in excellent agreement, showing that the electrode can be precisely designed. Approaches were outlined to provide a group velocity-matched very high-speed modulator electrode suitable for a low drive-voltage substrate-removed GaAs/AlGaAs electro-optic modulator     

Optimal tradeoffs for location-based routing in large-scale ad hoc networks

Existing location-based routing protocols are not versatile enough for a large-scale ad hoc environment to simultaneously meet all of the requirements of scalability, bandwidth efficiency, energy efficiency, and quality-of-service routing. To remedy this deficiency, we propose an optimal tradeoff approach that: 1) constructs a hybrid routing protocol by combining well-known location-update schemes (i.e., proactive location updates within nodes' local regions and a distributed location service), and 2) derives its optimal configuration, in terms of location-update thresholds (both distance and time-based), to minimize the overall routing overhead. We also build a route-discovery scheme based on an Internet-like architecture, i.e., first querying the location of a destination, then applying a series of local-region routing until finding a complete route by aggregating the thus-found partial routes. To find the optimal thresholds for the hybrid protocol, we derive the costs associated with both location updates and route discovery as a function of location-update thresholds, assuming a random mobility model and a general distribution for route request arrivals. The problem of minimizing the total cost is then cast into a distributed optimization problem. We first prove that the total cost is a convex function of the thresholds, and then derive the optimal thresholds. Finally, we show, via simulation, that our analysis results indeed capture the real behavior.     

Effects of microstructural evolution and intermetallic layer growth on shear strength of ball-grid-array Sn-Cu solder joints

The shear strength of ball-grid-array (BGA) solder joints on Cu bond pads was studied for Sn-Cu solder containing 0, 1.5, and 2.5 wt.% Cu, focusing on the effect of the microstructural changes of the bulk solder and the growth of intermetallic (IMC) layers during soldering at 270°C and aging at 150°C. The Cu additions in Sn solder enhanced both the IMC layer growth and the solder/IMC interface roughness during soldering but had insignificant effects during aging. Rapid Cu dissolution from the pad during reflow soldering resulted in a fine dispersion of Cu₆Sn₅ particles throughout the bulk solder in as-soldered joints even for the case of pure Sn solder, giving rise to a precipitation hardening of the bulk solder. The increased strength of the bulk solder caused the fracture mode of as-soldered joints to shift from the bulk solder to the solder/IMC layer as the IMC layer grew over a critical thickness about 1.2 m for all solders. The bulk solder strength decreased rapidly as the fine Cu₆Sn₅ precipitates coarsened during aging. As a consequence, regardless of the IMC layer thickness and the Cu content of the solders, the shear strength of BGA solder joints degraded significantly after 1 day of aging at 150°C and the shear fracture of aged joints occurred in the bulk solder. This suggests that small additions of Cu in Sn-based solders have an insignificant effect on the shear strength of BGA solderjoints, especially during system use at high temperatures.     

Microstructure-Mechanical Property Relationships in Hot Isostatically Pressed Alumina and Zirconia-Toughened Alumina

The rates of densification and the mechanical properties of pure Al₂O₃ and ZrO₂-toughened Al₂O₃ (ZTA) have been investigated as a function of the temperatures and time schedules used for hot isostatic pressing (HIP) as a postsintering heat treatment for samples which had already been pressureless sintered in air at 1460°C for 45 min. ZTA hot isostatically presed at 1400°C had a finer grain size and a narrower grain size distribution than ZTA hot isostatically pressed at 1600°C. At both HIP conditions, the density which could be obtained was almost the maximum theoretical density. The amount of grinding-induced and fracture-induced monoclinic ZrO₂ formed as a result of the tetragonal → monoclinic martensitic transformation in ZTA was higher in the samples hot isostatically pressed at 1400°C. ZTA hot isostatically pressed at 1600°C and 100 MPa had fewer flaws and higher strengths than ZTA hot isostatically pressed at 1400°C for the same time, with a gradual improvement in mechanical properties with increasing HIP time at each of these two temperatures. The best mechanical properties were obtained from ZTA hot isostatically pressed at 100 MPa and 1600°C for 1 h: these specimens had a four-point bend strength of 940 ± 15 MPa at room temperature and 540 ± 15 MPa at 1000°C and an indentation fracture toughness at room temperature of 9.4 ± 0.2 MPa·m^1/2.