Metal oxide semiconductors (MOSs) are attractive candidates as functional parts and connections in nanodevices. Upon spatial dimensionality reduction, the ubiquitous strain encountered in physical reality may result in structural instability and thus degrade the performance of MOS. Hence, the basic insight into the structural evolutions of low-dimensional MOS is a prerequisite for extensive applications, which unfortunately remains largely unexplored. Herein, we review the recent progress regarding the mechanical deformation mechanisms in MOSs, such as CuO and ZnO nanowires (NWs). We report the phase transformation of CuO NWs resulting from oxygen vacancy migration under compressive stress and the tensile strain-induced phase transition in ZnO NWs. Moreover, the influence of electron beam irradiation on interpreting the mechanical behaviors is discussed. 相似文献
This paper presents a 26-Gb/s CMOS optical receiver that is fabricated in 65-nm technology. It consists of a triple-inductive transimpedance amplifier (TIA), direct current (DC) offset cancellation circuits, 3-stage gm-TIA variable-gain amplifiers (VGA), and a reference-less clock and data recovery (CDR) circuit with built-in equalization technique. The TIA/VGA front-end measurement results demonstrate 72-dBΩ transimpedance gain, 20.4-GHz −3-dB bandwidth, and 12-dB DC gain tuning range. The measurements of the VGA’s resistive networks also demonstrate its efficient capability of overcoming the voltage and temperature variations. The CDR adopts a full-rate topology with 12-dB imbedded equalization tuning range. Optical measurements of this chipset achieve a 10−12 BER at 26 Gb/s for a 215−1 PRBS input with a −7.3-dBm input sensitivity. The measurement results with a 10-dB @ 13 GHz attenuator also demonstrate the effectiveness of the gain tuning capability and the built-in equalization. The entire system consumes 140 mW from a 1/1.2-V supply. 相似文献
High quality β-Ga2O3 single crystal nanobelts with length of 2−3 mm and width from tens of microns to 132 μm were synthesized by carbothermal reduction method. Based on the grown nanobelt with the length of 600 μm, the dual-Schottky-junctions coupling device (DSCD) was fabricated. Due to the electrically floating Ga2O3 nanobelt region coupling with the double Schottky-junctions, the current IS2 increases firstly and rapidly reaches into saturation as increase the voltage VS2. The saturation current is about 10 pA, which is two orders of magnitude lower than that of a single Schottky-junction. In the case of solar-blind ultraviolet (UV) light irradiation, the photogenerated electrons further aggravate the coupling physical mechanism in device. IS2 increases as the intensity of UV light increases. Under the UV light of 1820 μW/cm2, IS2 quickly enters the saturation state. At VS2 = 10 V, photo-to-dark current ratio (PDCR) of the device reaches more than 104, the external quantum efficiency (EQE) is 1.6 × 103%, and the detectivity (D*) is 7.5 × 1012 Jones. In addition, the device has a very short rise and decay times of 25−54 ms under different positive and negative bias. DSCD shows unique electrical and optical control characteristics, which will open a new way for the application of nanobelt-based devices. 相似文献
This paper is concerned with distributed Nash equi librium seeking strategies under quantized communication. In the proposed seeking strategy, a projection operator is synthesized with a gradient search method to achieve the optimization o players’ objective functions while restricting their actions within required non-empty, convex and compact domains. In addition, a leader-following consensus protocol, in which quantized informa tion flows are utilized, is employed for information sharing amon... 相似文献