郑州地区与国内其他资源带部分城市太阳能资源的比较

通过与其他资源带城市的太阳能辐射对比,发现郑州地区太阳能资源比较丰富,年总辐射变化比较平缓、稳定,太阳能资源比较优越。     

中红外光谱法对肉苁蓉的定性和半定量分析

本文尝试将中红外光谱(MIR)应用于肉苁蓉药材的质量评价和分析中.首先比较肉苁蓉药材粉末样品及其3种主要活性成分提取物,包括本乙醇总苷(PeGs)、甘露醇(Man)和多糖的红外光谱图差异,得出3种提取物的特征红外吸收峰,确定药材样品各特征峰的强弱与PeGs和Man含量高低的关系.然后用Spectrum v5.02软件计算得出不同波段内药材图谱与两种提取物图谱的红外相似系数,通过SPSS11.0软件分析发现,药材PeGs的含量(y)和1800~1200cm-1范围内的红外相似系数(x)呈极显著相关(R2=0.9927),回归方程:y=19.846x+0.0623.同样,药材Man的含量(y)与1100~600cm-1波数范围的红外相似系数(x)呈极显著相关(R2=0.9705),回归方程:y=13.855x-0.1714.因此,M IR可作为肉苁蓉药材质量定性和半定量分析的快速有效方法,直观评价药材质量.     

SiOx:Er薄膜材料光致发光特性的研究

采用射频磁控反应溅射技术,以Er2O3和Si为靶材,制备了SiOx:Er薄膜材料,在不同温度和不同时间下进行退火处理,室温下测量了样品的光致发光(PL)谱,观察到Er3+在1 530,1 542和1 555 nm处波长的发光,发现退火能明显增强Er3+的发光.研究了退火温度和时间对SiOx:Er薄膜光致发光的影响,发现Er2O3与Si面积比为1∶1时,1 100℃下20 min退火为样品的最佳退火条件.采用XRD和材料光吸收测试对样品结构和光学性质进行了研究,得到样品中Si晶粒大小为1.6 nm,样品的光学带隙为1.56 eV.对3种不同Er2O3与Si面积比的SiOx:Er薄膜材料进行研究,得到Er2O3与Si面积比为1∶3为样品的最佳配比,对薄膜材料发光现象进行了探讨.     

信道预测对自适应调制系统性能的影响分析

自适应调制系统通常根据当前信道条件调整未来的调制和编码方式来提高频谱效率,存在的问题是信道的不断变化使得这样的调整不准确,反而导致性能恶化.本文主要研究了信道变化对自适应调制系统性能的影响,调整方式有以下两种:使用当前信道估计值来判断下一帧调制方式;采用MMSE信道预测算法对下一帧信道值进行预测,再根据预测值判断调制方式.同时推导出两种情况下正确选择调制方式的概率公式.数值结果表明以当前值代替未来值的准确程度是和多普勒与帧长的乘积成反比的,且和平均信噪比距离信噪比界值的程度相关,而信道预测时选择调制方式的正确概率和多普勒与帧长的乘积也成反比,且和预测采用的阶次成反比.     

基于VMM的外部存储接口模块的验证平台搭建

本文首先介绍了VMM层次化验证方法学的基本思想和方法,将其与传统的芯片验证技术进行了对比,并进一步对基于VMM(Verification Methodology Manual For System Verilog)方法学的验证平台结构和各个组成模块进行了详细的介绍。最后以外部存储接口(EMI)模块为例对VMM验证平台的搭建进行了具体说明,并给出了验证结果。     

NFO/PZT复合磁电薄膜生长制备及性能的研究

采用脉冲激光沉积(PLD)法,在制备有SrRuO3底电极的SrTiO3(001)基片上生长高质量的NiFe2O4/Pb(Zr0.52Ti0.48)O3双层复合磁电薄膜.用X-射线衍射(XRD)对复合薄膜的微结构进行详细表征,结果表明,复合薄膜中NiFe2O4、Pb(Zr0.52Ti0.48)O3结晶良好,且具有单一的面外取向,Φ扫描模式显示NiFe2O4、Pb(Zr0.52Ti0.48)O3均延SrTiO3(001)方向外延生长.磁电性能表征结果表明,由于界面应力效应的作用,复合薄膜的铁电性较单层Pb(Zr0.52Ti0.48)O3明显减弱,而铁磁性基本保持NiFe2O4的软磁特性.     

Experimental and numerical analysis of BGA lead-free solder joint reliability under board-level drop impact

Board-level solder joint reliability is very critical for handheld electronic products during drop impact. In this study, board-level drop test and finite element method (FEM) are adopted to investigate failure modes and failure mechanisms of lead-free solder joint under drop impact. In order to make all ball grid array (BGA) packages on the same test board subject to the uniform stress and strain level during drop impact, a test board in round shape is designed to conduct drop tests. During these drop tests, the round printed circuit board assembly (PCBA) is suffered from a specified half-sine acceleration pulse. The dynamic responses of the PCBA under drop impact loading are measured by strain gauges and accelerometers. Locations of the failed solder joints and failure modes are examined by the dye penetration test and cross section test. While in simulation, FEM in ABAQUS software is used to study transient dynamic responses. The peeling stress which is considered as the dominant factor affecting the solder joint reliability is used to identify location of the failed solder joints. Simulation results show very good correlation with experiment measurement in terms of acceleration response and strain histories in actual drop test. Solder joint failure mechanisms are analyzed based on observation of cross section of packages and dye and pry as well. Crack occurred at intermetallic composite (IMC) interface on the package side with some brittle features. The position of maximum peeling stress in finite element analysis (FEA) coincides with the crack position in the cross section of a failed package, which validated our FEA. The analysis approach combining experiment with simulation is helpful to understand and improve solder joint reliability.     

Effects of periphery encapsulation material on the characteristics of micro vacuum dielectric capacitor

The effects of the periphery sealant on the electrical characteristics of vacuum dielectric capacitors (VDCs) are modeled. For the square shape VDCs, their characteristics are predominantly determined by the ratio of capacitor side length versus the width of boundary sealant layer, r. The smaller of the r value, the smaller of the dissipation factor, and the better frequency response of the VDCs are found. To achieve a dissipation factor of less than 10⁻⁵ at 1 GHz, the dimension parameter, r, should be smaller than 0.05 which has been achieved based on the present technology for a capacitor with size larger than 4 mm × 4 mm. The leakage current can also be reduced significantly in the VDCs. We found that the leakage current is mainly governed by the Poole-Frenkel emission of electrons over the periphery region. The present results have demonstrated that the VDC structure is a promising technology option for making high-frequency micro capacitors.     

Epitaxy and Characteristics of Resonant Cavity LEDs at 650 nm

Resonant-cavity light-emitting diodes (RCLED) at 650 nm wavelength were grown by metal organic chemical vapor deposition. In order to improve the interface quality and reduce the device voltage, an AlGaInP material system has been chosen to grow the top DBRs. The emission properties of the RCLED were characterized by measuring PL and EL spectra. The average emission power of the device is 0.5 mW at 20 mA and 2.2 V, and its spectrum full width at half maximum is about 10 nm.     

Light extraction efficiency enhancement of GaN-based light emitting diodes by a ZnO current spreading layer

preading layers are analyzed.