A Fully-Differential Complementary Hartley VCO in 0.18 m CMOS Technology

In this letter, a new complementary Hartley (C-Hartley) voltage controlled oscillator (VCO) with fully differential outputs is proposed, in which the self-biasing configuration is introduced to solve the biasing difficulty of a Hartley VCO by employing a five-port transformer. The proposed C-Hartley VCO with the center frequency of 5.6 GHz is implemented in a 1P6M 0.18 $mu$m CMOS process. The measurement result shows that the phase noise is ${-}123.6$ dBc/Hz at 1 MHz offset frequency, while dissipating 6.5 mA from 1.6 V supply with the FOM of ${-}188.5$ dBc.      

Significantly Enhanced Photoluminescence of Doped Polymer‐Metal Hybrid Nanotubes

We report on the significantly enhanced photoluminescence (PL) of hybrid double‐layered nanotubes (HDLNTs) consisting of poly(3‐methylthiophene) (P3MT) nanotubes with various doping levels enveloped by an inorganic, nickel (Ni) metal nanotube. From laser confocal microscopy PL experiments on a single strand of the doped‐P3MT nanotubes and of their HDLNTs, the PL peak intensity of the HDLNT systems increased remarkably up to ～350 times as the doping level of the P3MT nanotubes of the HDLNTs increased, which was confirmed by measurements of the quantum yield. In a comparison of the normalized ultraviolet and visible absorption spectra of the doped‐P3MT nanotubes and their HDLNTs, new absorption peaks corresponding to surface‐plasmon (SP) energy were created at 563 and 615 nm after the nanoscale Ni metal coating onto the P3MT nanotubes, and their intensity increased on increasing the doping level of the P3MT nanotube. The doping‐induced bipolaron peaks of the HDLNTs of doped‐P3MT/Ni were relatively reduced, compared with those of the doped‐P3MT nanotubes before the Ni coating, due to the charge‐transfer effect in the SP‐resonance (SPR) coupling. Both energy‐transfer and charge‐transfer effects due to SP resonance contributed to the very‐large enhancement of the PL efficiency of the doped‐P3MT‐based HDLNTs.     

An Effective Test and Diagnosis Algorithm for Dual‐Port Memories

This paper proposes a test algorithm that can detect and diagnose all the faults occurring in dual‐port memories that can be accessed simultaneously through two ports. In this paper, we develop a new diagnosis algorithm that classifies faults in detail when they are detected while the test process is being developed. The algorithm is particularly efficient because it uses information that can be obtained by test results as well as results using an additional diagnosis pattern. The algorithm can also diagnose various fault models for dual‐port memories.     

Anticipatory I/O Management for Clustered Flash Translation Layer in NAND Flash Memory

Recently, NAND flash memory has emerged as a next generation storage device because it has several advantages, such as low power consumption, shock resistance, and so on. However, it is necessary to use a flash translation layer (FTL) to intermediate between NAND flash memory and conventional file systems because of the unique hardware characteristics of flash memory. This paper proposes a new clustered FTL (CFTL) that uses clustered hash tables and a two‐level software cache technique. The CFTL can anticipate consecutive addresses from the host because the clustered hash table uses the locality of reference in a large address space. It also adaptively switches logical addresses to physical addresses in the flash memory by using block mapping, page mapping, and a two‐level software cache technique. Furthermore, anticipatory I/O management using continuity counters and a prefetch scheme enables fast address translation. Experimental results show that the proposed address translation mechanism for CFTL provides better performance in address translation and memory space usage than the well‐known NAND FTL (NFTL) and adaptive FTL (AFTL).     

Growth and dielectric properties of Ta_2O_5 single crystals grown by laser heated pedestal growth technique

Ta2O5 single crystals have been grown by the laser heated pedestal growth (LHPG) technique up to several centimeters length with diameter of 1.1 mm. The crystal, characterized by X-ray diffraction, dielectric measurement, and thermal expansion analysis, has Htri-Ta2O5 symmetry. Dielectric permittivity, loss tangent along [001] and [110] direction were investigated over the temperature range from -80 ℃ to 100 ℃. Large dielectric anisotropy in Ta2O5 single crystal was observed. At room temperature, the dielectric permittivities (1 MHz) along [001] and [110] are 33.2 and 231.9, respectively. The reason of dielectric enhancement in Ta2O5 crystal grown by LHPG was also discussed.     

Fabrication and characterisation of CMOS compatible silicon nanowire biosensor

A silicon nanowire (SiNW) biosensor for label-free and real-time detection has been fabricated by complementary metal-oxide semiconductor (CMOS) technology. For the detection of prostate-specific antigen (PSA) used as a biomarker of prostate cancer the SiNW surface was modified to immobilise the antibody of PSA (anti-PSA). Real-time monitoring reveals the change in conductivity of the SiNW on specific binding of PSA to anti-PSA. For 355 nm SiNW, the response to 10 ng/ml of PSA was 7.3 .     

Investigation of semiconductor optical amplifier integrated with DBR laser for high saturation power and fast gain dynamics

A detailed theoretical investigation of an integration of a semiconductor optical amplifier (SOA) and distributed Bragg reflector (DBR) laser is presented. The dependence of the device performance on those key design parameters such as the lasing wavelength, light injection direction (co- and contra-propagation), lasing power of the DBR laser, and the biasing condition of the SOA is examined systematically by means of a comprehensive time-domain traveling-wave model. As this integrated structure is particularly designed for high saturation power and fast gain dynamics, these characteristics are simulated and compared with the results from the conventional structures. Depending on different requirements, superior performance on either saturation power or noise figure without compromise on the optical gain can be achieved by different integration configurations (i.e., by different light injection directions). For the structure with the light injection from the output end of the SOA (namely, the integrated SOA-laser structure), the fast gain dynamics is found through simulation, which helps to reduce the large-signal waveform distortion in the amplification of narrow pulses.     

Co‐optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells

Thin‐film solar cells consisting of earth‐abundant and non‐toxic materials were made from pulsed chemical vapor deposition (pulsed‐CVD) of SnS as the p‐type absorber layer and atomic layer deposition (ALD) of Zn(O,S) as the n‐type buffer layer. The effects of deposition temperature and annealing conditions of the SnS absorber layer were studied for solar cells with a structure of Mo/SnS/Zn(O,S)/ZnO/ITO. Solar cells were further optimized by varying the stoichiometry of Zn(O,S) and the annealing conditions of SnS. Post‐deposition annealing in pure hydrogen sulfide improved crystallinity and increased the carrier mobility by one order of magnitude, and a power conversion efficiency up to 2.9% was achieved. Copyright © 2014 John Wiley & Sons, Ltd.     

A Novel Data Transmission Scheme for ATSC Terrestrial DTV Systems

In Advanced Television Systems Committee (ATSC) terrestrial digital television (DTV) systems, additional very low‐rate data can be transmitted by modulating the amplitude and polarity of the transmitter identification (TxID) signal. Although the additional data transmission scheme offers reliable transmission and has a very large coverage area, it has a limitation on the data rate. In this paper, we propose a novel additional data transmission scheme based on the TxID sequences of the ATSC DTV system and Walsh modulation. The proposed scheme not only increases the data rate significantly, but also offers a virtually identical coverage area compared to a conventional scheme.     

Design of Reader Baseband Receiver Structure for Demodulating Backscattered Tag Signal in a Passive RFID Environment

In this paper, we present a demodulation structure suitable for a reader baseband receiver in a passive radio frequency identification (RFID) environment. In a passive RFID configuration, an undesirable DC‐offset phenomenon may appear in the baseband of the reader receiver, which can severely degrade the performance of the extraction of valid information from the received tag signal. To eliminate this DC‐offset phenomenon, the primary feature of the proposed demodulation structures for the received FM0 and Miller subcarrier signals is to reconstruct the signal corrupted by the DC‐offset phenomenon by creating peak signals from the corrupted signal. It is shown that the proposed method can successfully detect valid data, even when the received baseband signal is distorted by the DC‐offset phenomenon.