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871.
Suwanprateeb K. E. Tanner S. Turner W. Bonfield 《Journal of materials science. Materials in medicine》1995,6(12):804-807
Isochronous stress-strain relationships and long term creep performance for unfilled and hydroxyapatite filled polyethylene composites have been studied. The tests were carried out in a buffered (pH=7.5) Ringer's solution at 37°C. It was observed that the inclusion of hydroxyapatite does not remove the non-linear viscoelasticity of polyethylene. The creep resistance is found to increase with increase in volume fraction of hydroxyapatite. The creep failure of composites at long times can occur due to debonding of the interface. 相似文献
872.
Streit D.C. Hafizi M.E. Umemoto D.K. Velebir J.R. Tran L.T. Oki A.K. Kim M.E. Wang S.K. Kim C.W. Sadwick L.P. Hwu R.J. 《Electron Device Letters, IEEE》1991,12(5):194-196
The authors have fabricated n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with base doping graded exponentially from 5×1019 cm-3 at the emitter edge to 5×1018 cm-3 at the collector edge. The built-in field due to the exponentially graded doping profile significantly reduces base transit time, despite bandgap narrowing associated with high base doping. Compared to devices with the same base thickness and uniform base doping of 1×1019 cm-3 , the cutoff frequency is increased from 22 to 31 GHz and maximum frequency of oscillation is increased from 40 to 58 GHz. Exponentially graded base doping also results ill consistently higher common-emitter current gain than uniform base doping, even though the Gummel number is twice as high and the base resistance is reduced by 40% 相似文献
873.
A radix-8 wafer scale FFT processor 总被引:2,自引:0,他引:2
Earl E. Swartzlander Jr. Vijay K. Jain Hiroomi Hikawa 《The Journal of VLSI Signal Processing》1992,4(2-3):165-176
Wafer Scale Integration promises radical improvements in the performance of digital signal processing systems. This paper describes the design of a radix-8 systolic (pipeline) fast Fourier transform processor for implementation with wafer scale integration. By the use of the radix-8 FFT butterfly wafer that is currently under development, continuous data rates of 160 MSPS are anticipated for FFTs of up to 4096 points with 16-bit fixed point data. 相似文献
874.
G Hendrickson R K Anderson P D Clayton J Cimino G M Hripcsak S B Johnson M McCormack S Sengupta S Shea R Sideli 《M.D. computing : computers in medical practice》1992,9(1):35-42
Over the past seven years, Columbia-Presbyterian Medical Center has been planning and implementing an integrated academic information management system. Accomplishments to date include establishing an institutional information architecture, installing a campus-wide network of workstations, recruiting the staff needed to develop and implement the system, and developing various applications. This paper presents the rationale and steps involved in these accomplishments, as well as data on use of the system so far. 相似文献
875.
Tamaki Y. Shiba T. Kure T. Ohyu K. Nakamura T. 《Electron Devices, IEEE Transactions on》1992,39(6):1387-1391
A new method is developed for forming shallow emitter/bases, collectors, and graft bases suitable for high-performance 0.3-μm bipolar LSIs. Fabricated 0.5-μm U-SICOS (U-groove isolated sidewall base contact structure) transistors are 44 μm2, and they have an isolation width of 2.0 μm, a minimum emitter width of 0.2 μm, a maximum cutoff frequency (f T) of 50 GHz, and a minimum ECL gate delay time of 27 ps. The key points for fabricating high-performance 0.3-μm bipolar LSIs are the control of the graft base depth and the control of the interfacial layer between emitter poly-Si and single-Si. The importance of a tradeoff relation between f T and base resistance is also discussed 相似文献
876.
Zupac D. Baum K.W. Kosier S.L. Schrimpf R.D. Galloway K.F. 《Electron Device Letters, IEEE》1991,12(10):546-549
The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain 相似文献
877.
The present study was aimed at understanding the response of 2014 Al alloy dispersed with graphite particles in various corrosive environments. Marine (sodium chloride) as well as acidic media were selected for the purpose with a view to widen the range of utility of the composite for applications where such environments may be encountered. Studies were also extended to characterize the corrosion resistance of the composite in fresh as well as used lubricating oils to explore the possibilities of using it in bearing, bushing and such other applications. The corrosion behaviour of the base alloy processed under identical conditions was also examined in the above media to see the influence of graphite addition in the alloy. In order to assess the role of the matrix microstructure, the composite as well as the base alloy was subjected to corrosion in heat-treated as well as-cast conditions. It was observed that the specimens suffered from the maximum rate of corrosion in acid, while sodium chloride produced the minimum corrosion rate. Oil in both used and fresh conditions revealed a negligibly small extent of corrosion. The composite was found to show a higher rate of corrosion than the base alloy under identical test conditions. This was attributed to the dispersoid/matrix interfacial corrosion in the case of the graphitic aluminium alloy. Heat treatment of the composite and the base alloy was found to lower the rate of corrosion in the environments tested. Microstructural modifications of the matrix and possible relief of residual stresses were thought to be responsible for the lower rate of corrosion in the heat-treated condition. 相似文献
878.
The authors identify the coil parameters that are of importance, when assessing interturn voltages produced by steep-fronted transients. The studies are based on a multiconductor transmission line computer model of a machine winding energized by a simple ramp function. Variations in interturn voltages produced by changes in insulation thickness, insulation permittivity, turn geometry, coil length and number of turns are examined and certain guidelines for avoiding high interturn voltages are evaluated. An application study is included to show how interturn voltages can be significantly reduced by applying these guidelines 相似文献
879.
In accord with the increasing concern about the global environmental issues, the absorption refrigeration heat-pump systems are currently being considered very promising and attractive. For the purpose of supporting the advanced R&D technology in this area, we have developed a novel correlation to represent the bubble-point pressures of LiBr H2O solutions. The developed correlation covers the most extensive range of validity ever proposed: 273–483 K for temperatures, 0.05 kPa to 1.0 MPa for pressures. and 29 76 wt% LiBr for concentrations.Paper presented at the Twelfth Symposium on Thermophysical Properties, June 19–24, 1994. Boulder, Colorado, U.S.A. 相似文献
880.