A digitally temperature-compensated crystal oscillator

The base frequency of oscillators used in the Global System for Mobile Communication (GSM) network or Global Positioning System (GPS) receiver applications needs to be very stable with respect to temperature and supply-voltage variations. One approach to obtain extremely good frequency stability is the use of oven-stabilized crystal oscillators. With this kind of oscillator, a frequency stability versus temperature of a few ppb versus the standard temperature range can be achieved. In this paper, a digitally compensated crystal oscillator is described. The system provides a frequency stability of (Δf)/f<1.5 ppm for a temperature range of -40°C to 90°C compared to about ±20 ppm for a noncompensated crystal. The core of the system is an application-specified integrated circuit (ASIC) fabricated in a standard 0.8-μm CMOS process. The power consumption for the oscillator running at 13 MHz is 100 mW. The final device equipped with the ASIC, crystal blank, and a few external components fits into a 14×9×3 mm³ package     

77 GHz soliton modelocked Nd:YVO4 laser

An Nd:YVO₄ laser which was passively modelocked at the very high repetition rate of ~77 GHz, using a semiconductor saturable absorber mirror (SESAM), is demonstrated. The soliton-like pulses are well separated in time and their duration is 2.7 ps. The required negative dispersion is introduced by a GTI-like structure, which is formed by the gain medium and the SESAM     

Second Generation Nanostructured Metal Oxide Matrices to Increase the Thermal Stability of CO and NO2 Sensing Layers Based on Iron(II) Phthalocyanine

An iron(II) phthalocyanine (FePc) complex solubilized by decylamine (DA) and benzylamine (BA) is incorporated into a nanoparticulate metal oxide matrix to develop optical sensor films sensitive to NO₂ and CO. Eleven amine solvents have been tested as N‐donor ligands that permit ligand exchange with the gas molecules. We have systematically investigated the suitability of different N‐donor ligands, studied the thermal stability of the NO₂‐ and CO‐sensing films at 4, 25, 60, and 80 °C by photometry, and corroborated our findings by using NMR experiments. A satisfactory thermal stability of the films has not been obtained for chemically unmodified nanoparticulate metal oxide matrices. We have therefore developed a second generation of nanostructured metal oxide supports that show increased thermal stability and adequate sensitivity to NO₂ and CO. These novel nanostructured matrices have been chemically modified using amines, alumina oligomers, and/or anti‐gas‐fading agents. These components have been integrated into the metal oxide matrices to avoid degradation of the optical films and to preserve their sensitivity.     

Reaction chemistry and resulting surface structure of HgCdTe etched in CH4/H2 and H2 ECR plasmas

We report on several new aspects of etching of Hg_1−xCd_xTe (x = 0.22), HgTe, and CdTe in CH₄/H₂/Ar plasmas generated by an electron cyclotron resonance plasma source. Using a residual gas analyzer, we have identified elemental Hg, TeH₂, Te(CH₃)₂, and Cd(CH₃)₂ as the primary reaction products escaping from a HgCdTe surface during the plasma exposure. We have also demonstrated that a bias is not needed to etch HgCdTe at moderate temperatures (30-40°C), as previously suggested by other researchers. We have also developed a technique that avoids the formation of hydrocarbon polymer films on a HgCdTe sample during etching. Moreover, we have examined by x-ray photoelectron spectroscopy analysis and ellipsometry the surface condition of HgCdTe resulting from etching with this technique at zero bias. After exposure to the CH₄/H₂Ar plasma (or to a H₂/Ar plasma only), the HgCdTe samples exhibited a depletion of the HgTe component in the near surface region (increase of the x-value). The depletion covered a range from virtually x = 1 after H₂/Ar (10:2 in sccm) etching to values 0.4 < x < 0.5 after CH₄/H₂Ar (7:7:2 in seem) etching. Exposures to the plasmas were found to result in surface roughening of HgCdTe, however, plasmas rich in H₂ were observed to cause significantly rougher surfaces than plasmas with small H₂/CH₄ ratios. This difference in the resulting surface condition is attributed solely to chemical effects since the respective ion energies are considered to be below the damage threshold for HgCdTe in both cases. We also investigated the etching of HgTe and CdTe single crystals. The etch rate of HgTe was found to be over one order of magnitude higher than that of CdTe under similar conditions. This large difference in etch rates is assumed to be responsible for the observed preferential etching of the HgTe component indicated by the HgTe depletion of the HgCdTe surface region.     

Effect of Al Composition and Gate Recess on Power Performance of AlGaN/GaN High-Electron Mobility Transistors

AlGaN/GaN high-electron mobility transistors with different Al compositions and barrier thicknesses were compared. The samples with higher Al composition and similar 2D electron gas density showed higher gate leakage, utilizing a slant field plate gate process. By applying a gate recess etch and a slant field plate gate process, gate leakage was improved to a similar level for all the devices, and the power density and PAE were much improved.     

High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation

In this paper, a high-power GaN/AlGaN/GaN high electron mobility transistor (HEMT) has been demonstrated. A thick cap layer has been used to screen surface states and reduce dispersion. A deep gate recess was used to achieve the desired transconductance. A thin SiO/sub 2/ layer was deposited on the drain side of the gate recess in order to reduce gate leakage current and improve breakdown voltage. No surface passivation layer was used. A breakdown voltage of 90 V was achieved. A record output power density of 12 W/mm with an associated power-added efficiency (PAE) of 40.5% was measured at 10 GHz. These results demonstrate the potential of the technique as a controllable and repeatable solution to decrease dispersion and produce power from GaN-based HEMTs without surface passivation.     

Passively modelocked 50 GHz Er:Yb:glass laser

A diode-pumped Er:Yb:glass miniature laser has been passively mode locked to generate 2.0 ps pulses at a 50 GHz repetition rate with up to 7.5 mW average power. By combining this laser with a dynamic gain equaliser, a flat optical spectrum has been generated with up to 10 discrete channels with a 50 GHz channel spacing locked to the 50 GHz ITU grid.     

A Direct Approach to Organic/Inorganic Semiconductor Hybrid Particles via Functionalized Polyfluorene Ligands

Controlled Suzuki–Miyaura coupling polymerization of 7′‐bromo‐9′,9′‐dioctyl‐fluoren‐2′‐yl‐4,4,5,5‐tetramethyl‐[1,3,2]dioxaborolane initiated by bromo(4‐tert‐butoxycarbonylamino‐phenyl)(tri‐tert‐butylphosphine)palladium ( 1 ) or bromo(4‐diethoxyphosphoryl‐phenyl)(tri‐tert‐butylphosphine)palladium ( 2 ) yields functionalized polyfluorenes (M_n = 4 × 10³ g mol^?1, M_w/M_n < 1.2) with a single amine or phosphonic acid, respectively, end‐group. High temperature synthesis of cadmium selenide quantum dots with these functionalized polyfluorenes as stabilizing ligands yields hybrid particles consisting of good quality (e.g. emission full width at half maximum of 30 nm; size distribution σ < 10%) inorganic nanocrystals with polyfluorene attached to the surface, as corroborated by transmission electron microscopy analysis and analytical ultracentrifugation. Sedimentation studies on particle dispersions show that a substantial portion (ca. half) of the phosphonic acid terminated polyfluorene ligands is bound to the inorganic nanocrystals, versus ca. 5% for the amino‐functionalized polyfluorene ligands. Single particle micro‐photoluminescence spectroscopy shows an efficient and complete energy transfer from the polyfluorene layer to the inorganic quantum dot.     

Enhanced Osteoblast Adhesion to Epoxide‐Functionalized Surfaces

As an alternative to expensive extracellular matrix (ECM) proteins generally applied as coatings in Petri dishes used for cell binding, an innovative system based on epoxide‐functionalized monolayers capable of protein binding is proposed. Since cells bind to material surfaces through proteins, protein‐binding surfaces should also promote cell binding. Here we investigate how the cell‐binding properties of an epoxide‐functionalized surface compares with ECM protein gel coated surfaces and tissue culture polystyrene control surfaces. Glass surfaces are functionalized with glycidoxypropyltriethoxysilane (GOPS), which results in an epoxide‐functionalized surface capable of binding proteins through an epoxide–amine reaction. Advancing contact angle measurements and atomic force microscopy measurements confirm the formation of a homogeneous GOPS monolayer. This monolayer is micropatterned with fluorescein‐labeled ECM protein gel by microcontact printing (µCP). Confocal laser scanning microscopy (CLSM) shows accurately transferred ECM protein gel micropatterns. Osteoblasts that are seeded on these micropatterned substrates show a clear preference for adhering to the epoxide‐functionalized areas. The morphology of these cultured osteoblasts is needle‐like with high aspect ratios. As controls, osteoblasts are cultured on GOPS‐functionalized surfaces, unstructured ECM protein gel surfaces, and tissue culture polystyrene (TCPS). The GOPS surfaces demonstrate a drastic increase in cell adhesion after 2 h, whilst the other tests show no adverse effects of this surface on the osteoblasts as compared to ECM and TCPS. CLSM shows healthy cell morphologies on each surface. It is demonstrated for the first time that epoxide groups outperform ECM protein gel in cell adhesion, thereby providing new routes for cost‐effective coatings that improve biocompatibility as well as exciting, new methodologies to control and direct cell adhesion.     

One hundred years of diffraction theory

The development of diffraction theory in the last 100 years is discussed from a personal viewpoint, with emphasis on the geometrical theory of diffraction. First some early work of Kirchhoff, Rayleigh, Sommerfeld, MacDonald and others is mentioned to indicate the state of the field in the 1940's. Next the author's work during World War II is described. Then the considerations that led him to the geometrical theory of diffraction are explained, and the defects of that theory are outlined. Finally the advances in the theory since its introduction, which have remedied many of these defects, are mentioned.