Extended fundamental frequency analysis of the LCC resonant converter

Fundamental frequency techniques are used to analyze the series-parallel resonant converter under heavy load conditions, both with a continuous, but distorted parallel capacitor voltage waveform, and with a discontinuous capacitor voltage waveform. The analysis is validated with results from an experimental prototype. The application of the technique to the parallel-loaded L-C resonant converter is also considered.     

Complete joint weight enumerators and self-dual codes

We define the complete joint weight enumerator in genus g for codes over /spl Zopf//sub 2k/ and use it to study self-dual codes and their shadows. These weight enumerators are related to the theta series of the associated lattices and Siegel and Jacobi forms are formed from these series.     

Quadratic solitons: recent developments

Multicolor optical solitons mediated by quadratic nonlinearities have been observed experimentally during the last few years in a variety of materials and geometries in a number of laboratories around the world. Today, many of the basic properties of the corresponding soliton families are theoretically well established. Nevertheless, experiments continuously reveal new surprises, and the topic is entering new theoretical and experimental territories. In this paper, we briefly outline the key features of the quadratic solitons and overview the latest developments.     

Degradation of junction leakage in devices subjected to gateoxidation in nitrous oxide [MOS transistors]

Nitrided gate oxides offer several electrical and reliability advantages over conventional oxides and also provide a good barrier against impurity diffusion. Oxidation in nitrous oxide (N₂O) has been very successful in overcoming some of the problems associated with nitridation in ammonia. The authors have observed that the extent of N₂O oxidation has a strong detrimental effect on the drain leakage current of MOS transistors in the off state. This phenomenon has been identified to be caused by an increase in the active area junction leakage current