Multicenter study on the clinical value of fetal pulse oximetry. I. Methodologic evaluation. The French Study Group on Fetal Pulse Oximetry

OBJECTIVE: Our purpose was to evaluate the feasibility of intrapartum fetal pulse oximetry, the distribution of fetal oxygen saturation values, and the relationship with the neonatal outcome in a population with an abnormal fetal heart rate. STUDY DESIGN: A prospective multicenter observational study was performed from June 1994 to November 1995. Fetal oxygen saturation was continuously recorded with use of a Nellcor N-400 fetal pulse oximeter in case of an abnormal fetal heart rate during labor. Simultaneous readings of fetal oxygen saturation and fetal blood analysis were obtained at inclusion and before birth. Feasibility, adverse effects, distribution of fetal oxygen saturation values, and relationship with neonatal outcome were assessed. RESULTS: One hundred seventy-four patients were included. From 172 attempted sensor placements, the procedure was impossible in three cases and fetal oxygen saturation values were obtained in 164 cases (95.3%). Physicians considered sensor placement an easier task than an attempt at fetal blood analysis (easy in 87.5% vs 78.9% for fetal blood analysis, p = 0.03). The mean reliable signal time (+/- SD) was 64.7% +/- 32% during the first stage. There were no serious adverse effects in the study population. The mean fetal oxygen saturation during the first stage of labor was 42.2% +/- 8.0% (10th to 90th percentile range 30% to 53%). Fetal oxygen saturation was significantly correlated with scalp pH (r = 0.29, p = 0.01) but not with neonatal umbilical artery pH or gas values. There was a significant association between low fetal oxygen saturation (< 30%) and poor neonatal condition. CONCLUSION: The feasibility of fetal pulse oximetry is satisfactory in clinical practice. It is easy to use and provides a fair rate of recorded values, even in a population with suspicion of fetal distress. A low fetal oxygen saturation is significantly associated with an abnormal neonatal outcome.     

Isolated ovarian polyarteritis nodosa

Polyarteritis nodosa is a rare disorder and a form of systemic vasculitis. A 48 year-old female was admitted to the hospital because menorrhagia and pelvic pain in February 1993. The patient underwent exploratory laparotomy resulting in a total hysterectomy and bilateral salpingo-oophorectomy for myoma of uterus and a right adnexal cystic mass. Histopathologic examination revealed left ovarian periarteritis nodosa. Further investigation and 9 months follow-up failed to show any systemic involvement. To our knowledge the isolated ovarian polyarteritis nodosa is the first case in the literature.     

Direct optical injection locking of 20 GHz superlattice oscillators

For the first time, a direct optically injection-locked oscillator based on the Esaki-Tsu effect in superlattices is reported. The microwave output power is -7 dBm at 20 GHz with an optical input power of -10 dBm at a wavelength of 1.3 μm     

Contribution a l'etude du polymorphisme de Ga2S3: Structure cristalline de Mn0,23Ga1,85S3

The Mn_0.23Ga_1.85S₃ phase belongs to the solid solution $\text{ф}{}_0$, stable at low temperature in the Ga₂S₃MnS system. It is hexagonal superstructure of the wurtzite, with the Ga₂S₃α′ type ($\text{a}\text{= 6.397}\text{A}\text{?}$; $\text{c}\text{= 18.027}\text{A}\text{?}$Z = 6; space groupe P6₁ or P6₅). Its crystal structure has been refined by the least squares method to a final R = 0.06 with 323 independant reflections. This structure is closely related to Ga₂S₃ α described by Hahn and Frank, and differs only by the partial occupation of the vacant metal site of Ga₂S₃ by Mn atoms in statistical disorder.     

Floor free 10-Gb/s transmission with directly modulated GaInNAs-GaAs 1.35-/spl mu/m laser for metropolitan applications

Among the new semiconductor materials for telecom devices, the GaInNAs-GaAs structure presents interesting properties for low-cost applications, like high differential gain and high T/sub 0/. Another key aspect of the performance is the behavior of the GaInNAs-GaAs based lasers under high bit rate direct modulation. Here, we demonstrate the dynamic capabilities of GaInNAs-GaAs three-quantum-well ridge structure through 2.5-Gb/s directly modulated laser emission and transmission on standard fiber, in the temperature range 25/spl deg/C-85/spl deg/C. Besides transmission is demonstrated up to 10 Gb/s at 25/spl deg/C on the same fiber, without penalty and bit-error-rate floor.     

Formal techniques for performance analysis: blending SAN and PEPA

In this paper we consider two performance modelling techniques from the perspectives of model construction, generation of an underlying continuous time Markov process, and the potential for reduction in the Markov process. Such careful comparison of modelling techniques allows us to appreciate the strengths and weaknesses of different approaches, and facilitates cross-fertilization between them. In the present case we take a characteristic of one formalism, functional rates in Stochastic Automata Networks, and introduce it to the other formalism, Performance Evaluation Process Algebra. We investigate the benefits of this cross-fertilization, particularly from the perspectives of Markov process generation and reduction.     

Cointegration of Gate-All-Around MOSFETs and Local Silicon-on-Insulator Optical Waveguides on Bulk Silicon

In this work we present a bulk silicon technology platform able to cointegrate gate-all-around (GAA) MOSFETs and local SOI waveguides with pentagonal cross section. Wire diagonals of 100-800 nm are obtained using a lithographic resolution of 0.8 mum. Well-functioning triangular multigate MOSFETs are reported, and tested up to 150 degC. A significant increase is observed in the low-field mobility mu₀ for small devices (W_effles500 nm), which is attributed to local volume inversion in the corners. Preliminary characterization of the optical waveguides is carried out, showing optical losses of a few dB/cm. The processing is entirely CMOS compatible, does not require access to advanced lithography equipment, and is based on a silicon bulk substrate. Thus, this technology might serve as the basis for a low-cost, high-performance optical signaling platform