载人航天运载火箭用元器件可靠性保证技术研究与应用

元器件的可靠性是影响载人航天运载火箭高可靠的关键因素之一.本文针对载人航天的高可靠要求,以现实条件为基础,以载人航天为目标,进行了元器件可靠性保证技术的研究,包括:管理控制、监制验收、复验筛选等.最后总结了元器件质量保证工作的成效与经验.     

重复使用运载器GN＆C技术发展趋势及特点

重复使用运载器 (RLV)将大幅度降低现役航天运载器的发射准备时间、成本 ,并提高其可靠性、安全性 ,是航天运输系统的发展方向。制导、导航与控制 (GN&C)系统是RLV的核心技术之一 ,先进的RLV的GN&C技术不仅能缩短设计周期、降低成本 ,而且对复杂多变的飞行环境具有较强的鲁棒性 ,从而提高了飞行器的安全性。指出了RLV的GN&C系统的要求、特点 ,总结了近年来该领域的研究成果 ,提出了下一步需研究的问题。     

焊接热输入对近焊缝区组织性能的影响

采用焊接热模拟技术模拟不同焊接热输入条件下,峰值温度为1 350℃时对应近焊缝区的组织和性能,并对母材进行宏观力学特性测试;对比分析不同焊接热输入条件下所得近焊缝区的组织和性能。结果表明:经过3种不同焊接热输入所得近焊缝区的组织均由板条状贝氏体和少量碳化物组成;随着焊接热输入的增加,近焊缝区组织晶粒变大,贝氏体板条束变粗变厚,析出的碳化物数量增多,并且强度降低、韧性增强,但总体上跟母材的性能基本一致;当焊接线能量为12 kJ/cm时近焊缝区达到最佳的强韧性匹配。     

舰炮对空虚拟校射的作战使用

虚拟校射是提高舰炮对空射击效能的重要手段。本文建立了对空虚拟校射虚拟射点优选的计算模型。根据某型舰炮计算的有关结果．提出了虚拟射点允许区间的概念及计算方法，可供作战使用时参考。     

三维加速度测试横向灵敏度交叉影响消除方法

针对传感器横向灵敏度较大,容易影响径向加速度测试结果的问题,提出了一种消除三维加速度测试传感器横向灵敏度交叉影响的方法。该方法首先利用冲击台静态标定加速度传感器,得出加速度横向灵敏度校正矩阵,再对测得的加速度进行校正便可得出引信安全系统部位内弹道中间段三维加速度。分析与试验表明:将加速度横向灵敏度作为三向加速度校正因子,能够确保三维加速度测试曲线准确,从而有助于分析和判断引信瞎火甚至早炸故障。     

Children's cognitive function and cell-phone electromagnetic fields

Several companies have made major strides in marketing cellular telephones to children within the past 12 months; more and more children are using cell phones as part of their daily routines. Some fear any disturbance to brain activity in children could lead to impaired learning ability or behavioral problems. Moreover, any lasting biochemical effects could have important consequences, especially in the young, who still have years of development ahead of them. Recently, two studies of the mental process of young users of standard 902 MHz Global System for Mobile Communication (GSM) cellular mobile telephones were published: one paper reported a slight trend toward speeding up of simple reaction time, whereas the other study did not detect any change in cognitive functions.     

Cross-domain access control policy mapping mechanism for balancing interoperability and autonomy

Cross-domain access control can improves interoperability but reduces intra-domain autonomy.To balance inter-domain interoperability and intra-domain autonomy,a cross-domain access control policy mapping to the problem of multi-objective integer optimization programming was formulated.Both the maximization of inter-domain interoperability and the minimization of intra-domain autonomy were taken as the objectives.Further,seven constraints were designed to prevent typical cross-domain conflicts.To solve the optimization problem,a constrained NSGA-III algorithm was proposed.The experimental results show that the proposed algorithm can quickly converge and accurately find the policy mapping even in the large-scale datasets.     

ESD protection design for I/O cells with embedded SCR structure as power-rail ESD clamp device in nanoscale CMOS technology

This paper presents a new electrostatic discharge (ESD) protection design for input/output (I/O) cells with embedded silicon-controlled rectifier (SCR) structure as power-rail ESD clamp device in a 130-nm CMOS process. Two new embedded SCR structures without latchup danger are proposed to be placed between the input (or output) pMOS and nMOS devices of the I/O cells. Furthermore, the turn-on efficiency of embedded SCR can be significantly increased by substrate-triggered technique. Experimental results have verified that the human-body-model (HBM) ESD level of this new proposed I/O cells can be greater than 5 kV in a 130-nm fully salicided CMOS process. By including the efficient power-rail ESD clamp device into each I/O cell, whole-chip ESD protection scheme can be successfully achieved within a small silicon area of the I/O cell.     

Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design

Three different carbon nanotube (CN) field-effect transistor (CNFET) designs are compared by simulation and experiment. While a C-CNFET with a doping profile similar to a "conventional" (referred to as C-CNFET in the following) p-or n-MOSFET in principle exhibits superior device characteristics when compared with a Schottky barrier CNFET, we find that aggressively scaled C-CNFET devices suffer from "charge pile-up" in the channel. This effect which is also known to occur in floating body silicon transistors deteriorates the C-CNFET off-state substantially and ultimately limits the achievable on/off-current ratio. In order to overcome this obstacle we explore the possibility of using CNs as gate-controlled tunneling devices (T-CNFETs). The T-CNFET benefits from a steep inverse subthreshold slope and a well controlled off-state while at the same time delivering high performance on-state characteristics. According to our simulation, the T-CNFET is the ideal transistor design for an ultrathin body three-terminal device like the CNFET.     

Robust and precision motion control system of linear-motor direct drive for high-speed X-Y table positioning mechanism

In this paper, design and implementation of an H/sub /spl infin//-based precision motion control system is presented for a high-speed linear-motor direct-drive X-Y table positioning mechanism in semiconductor wire-bonding applications. The system works with a cascaded robust feedback control, which has an inner loop velocity controller and an outer loop position controller, and an autotuning feedforward compensator. The design aim is to achieve high and consistent tracking performance even in the presence of considerable resonance uncertainties and external disturbances. Toward this aim the velocity controller is designed using H/sub /spl infin// optimization technique, based on reduced-order modeling that considers three significant resonance modes and neglects all other resonance modes having an insignificant amplitude and/or too high frequency. These neglected modes and variations of the three resonance modes from machine to machine (due to manufacturing tolerance) and/or with different operating conditions are taken care of by appropriate additive uncertainty representation in the design phase. The resulting system is validated and implemented with a profile motion of a maximum acceleration of 5.2 g (1g=9.81 m/s/sup 2/) on mass-produced wire bonding machines.