Hydrogenated amorphous silicon thin-film transistor arrays fabricated by digital lithography

A jet-printed digital-lithographic method, in place of conventional photolithography, was used to fabricate 64 /spl times/ 64 pixel (300 /spl mu/m pitch) matrix addressing thin-film transistor (TFT) arrays. The average hydrogenated amorphous silicon TFT device within an array had a threshold voltage of /spl sim/3.5 V, carrier mobility of 0.7 cm/sup 2//V/spl middot/s, subthreshold slope of 0.76 V/decade, and an on/off ratio of 10/sup 8/.     

A NEW LARGE CAVITATION CHANNEL IN CHINA SHIP SCIENTIFIC RESEARCH CENTER

1 .　INTRODUCTIONIntherecentdecades ,itisrealizedthatitisquitenecessarytocarryouttestsathighReynoldsnumberwithalowbackgroundnoiselevelinordertomeetmoreandmoreurgentneedsofmodernnavyandmaritimeindustry .Anewlargecavita tionchannelisdevelopedinCSSRCfortestingcompletehull/ propulsor/appendagesarrange ments[1] .Itrepresentsoneofthelatestintechno logicallyadvancedlargecavitationtestfacilities.Inthefollowingsections ,thefeaturesandthefirsttestresultsofthechannelwillbedescribed .2 .　DICRIP…     

Acoustical tomography based on the second-order Born transformperturbation approximation

Reconstruction algorithms and their numerical examples of acoustical tomography based on the second-order Born transform perturbation approximation are presented. The reconstruction algorithms in the second-order Born approximation are similar in form to those in the first-order Born approximation. Replacing the angular spectrum of the scattered wave in the first-order case by the result of applying a first-order operator to the angular spectrum of the scattered wave or applying a second-order operator to the angular spectrum of the incident wave leads to the second-order reconstruction algorithms. Also, comparisons of reconstruction algorithms of the first- and second-order Born approximations are given, and they show that the second-order Born approximation algorithms have a distinct advantage over the first-order approximations in many cases     

SiH4激光等离子体内H谱线的线型研究

本文利用OMA-Ⅲ系统测量了脉冲TEA CO_2激光诱发的SiH_4等离子体发光谱内H巴耳末系的H_α、H_β和H_γ线的线型及线宽。通过理论及实验分析,认为这些谱线的主要加宽机制为Stark加宽。由实验线型和理论线型的拟合得到等离子体的电子温度T≈40000K和电子密度N≈10~(17)cm~(-3)。     

化工矿山预可行性研究计算机辅助设计系统

概略介绍了该系统的功能、结构、运行方式及控制逻辑结构,以及测试结果。     

川东地区长兴组缝洞型储层的识别

本文针对四川东部地区上二叠统长兴组(P_2~2)缝洞型储层的低孔、低渗及非均质性等特点,分析了影响这类储层识别的主要因素,提出了利用现有的地球物理测井手段定性识别储层的指标和定量综合识别储层的方法,这可望提高测试成功率。     

含H2S井完井液用除硫剂和缓蚀剂

含H_2S井完井液对井下金属管串具有腐蚀性。采用锌基或铁基螯合物除硫剂及咪唑啉缓蚀剂可有效地防止这种腐蚀的发生。本文对H_2S的腐蚀、除硫剂和缓蚀剂产品及其对产层的损害作了介绍与探讨。