Microstructure and press formability of a cross-rolled magnesium alloy sheet

Cross-rolling, in which the roll axis is tilted by 7.5° towards the TD-direction, was carried out on a commercial magnesium alloy. The (0002) texture intensity of the cross-rolled specimen was lower than that of the unidirectionally rolled specimen, and the (0002) texture of the cross-rolled specimen was inclined about 10° towards the TD-direction. Also, the grain size of the cross-rolled specimen was smaller than that of the unidirectionally rolled specimen. As a result of the Erichsen tests at 433-493 K, the press formability of the cross-rolled specimen was higher than that of the unidirectionally rolled specimen. The high formability of the cross-rolled specimen is attributed to both the modification of (0002) texture and the enhancement of grain refinement by the cross-rolling.     

A 10-s doping technology for the application of low-temperaturepolysilicon TFTs to giant microelectronics

A bucket-type high-density (0.25-1.2-mA/cm²) low-energy (500-2000 V) ion source was utilized for high-speed phosphorus doping directly into a thin polysilicon layer without cap SiO₂. Doping gas with He dilution was selected to reduce etching of polysilicon film. Excimer laser (XeCl, 8 mm×8 mm) pulse annealing was introduced to activate effectively the doped impurity. The combination of these techniques provided a practically low sheet resistance for the TFT source, drain, and gate with a short time doping. The low-temperature polysilicon TFT fabricated with a doping time of 10 s had characteristics comparable to those of that fabricated by a longer time doping or conventional ion implantation, showing the practicality of this technology and its promise for giant microelectronics     

A new fabrication technology for AlGaAs/GaAs HEMT LSIs using InGaAsnonalloyed ohmic contacts

The authors studied the nonalloyed ohmic characteristics of HEMTs (high electron mobility transistors). At high integration levels, nonalloyed ohmic contacts were found to have two advantages: an extremely short ohmic length with low parasitic source series resistance and direct connection between the source/drain and gate with the same metal. The propagation delay in a ring oscillator with a single-metal source/drain and gate formed simultaneously was 37 ps/gate (L _g=0.9 μm). The very short ohmic metal contacts and just three contact holes made it possible to reduce the memory cell area greatly. The cell is 21.5×21.5 μm², one of the smallest ever reported for a GaAs-based static RAM. Using smaller load HEMTs or resistor loads in the memory cell, combined with nonalloyed ohmic technology with quarter- or subquarter-micrometer-gate HEMTs it is possible to fabricate a very-high-speed LSI such as a 64-kb static RAM with a reasonable chip size     

Densification behaviour of ceramic powder

A three-dimensional compaction device has been developed to carry out compaction of a ceramic powder. The details of the device, which provides compaction with various stress ratios, are described. A densification criterion for the powder is proposed; this is similar to that for the case for metal powders, but the role of the hydrostatic stress component appears to be different. Stress-strain rate relations are then derived using the concept of plastic potential; experimental results show that the normality of the strain rate vector to the surface which corresponds to the criterion almost holds.     

Surface modifications of aligned carbon nanotube thin films by Argon‐ion sputtering

To use carbon nanotubes (CNTs) as anode material for the solid‐state thin‐film Li‐ion rechargeable battery, the tubes are preferred to be aligned perpendicular to a substrate and the CNT thin film to have a smooth surface. Using an Ar‐ion sputtering technique, we carried out the surface modifications of the CNT thin film prepared by the SiC surface decomposition method. In order to evaluate the surface modification, the surface and cross section of the modified CNT film were investigated by field‐emission scanning electron microscopy and atomic force microscopy. © 2012 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Preparation and Luminescence Spectra of Calcium- and Rare-Earth (R = Eu, Tb, and Pr)-Codoped α-SiAlON Ceramics

Rare-earth-doped oxynitride or nitride compounds have been reported to be luminescent and may then serve as new phosphors with good thermal and chemical stabilities. In this work, we report the photoluminescence (PL) spectra of europium-, terbium-, and praseodymium-doped Ca-α-SiAlON ceramics. The highly dense ceramics were prepared by hot pressing at 1750°C for 1 h under 20 MPa in a nitrogen atmosphere. Europium-doped Ca-α-SiAlON displayed a single broad emission band peaking at λ= 550–590 nm depending on the europium concentration. The emission bands in the spectra of europium-doped Ca-α-SiAlONs were assigned to the allowed transition of Eu²⁺ from the lowest crystal field component of 4 f ⁶5 d to ⁸S_7/2 (4 f ⁷) ground-state level. The emission spectra of terbium- and praseodymium-doped Ca-α-SiAlON ceramics both consisted of several sharp lines, which were attributed to the ⁵D₄→⁷F _j ( j = 3, 4, 5, 6) transitions of Tb³⁺ and ³P₀→³H _j ( j = 3, 4, 5) transitions of Pr³⁺, respectively. In particular, the terbium-doped α-SiAlON ceramics showed a strong green emission among these phosphors.     

The characteristics of the external‐electrode mercury fluorescent lamp for backlighting liquid‐crystal‐television displays

Abstract— A reliable external‐electrode mercury fluorescent lamp (EEFL) has been developed for backlighting a liquid‐crystal‐television (LC‐TV) display. This involved the investigation of the EEFL characteristics and the improvement in the construction of the EEFL and drive waveforms, in the frequency range of 50–200 kHz, that affects the EEFL characteristics. The results showed that a sinusoidal waveform is suitable for driving the EEFL, and EEFL's voltage decreases when the frequency of the drive waveform is increased.     

ADSORPTION BEHAVIOR OF COBALT( II) IONS ON LAYERED DIHYDROGEN TETRATITANATE HYDRATE FIBERS IN AQUEOUS SOLUTIONS IN THE RANGE FROM 298 to 523 K

The adsorption properties of cobalt(II) ions have been studied on layered dihydrogen tetratitanate hydrate fibers, H₂Ti₄O₉,?nH₂O, in the temperature range from 298 to 523?K. The distribution coefficients of the adsorption of cobalt (II) ions were increased with increasing temperatures up to 367?K, but were decreased in the temperature range between 367 and 523?K. The X-ray powder diffraction patterns of the fibers indicate that the fibers hold layer structure up to 367?K, but change to low crystalline anatase or its precursor above that temperature. It is notable that the material has the capability of cobalt (II) adsorption even at 523?K, although the maximum is present at 367?K.     

Effects of the method of preparing iron orthophosphate catalyst on the structure and the catalytic activity

Catalytic activity of iron orthophosphate [FePO₄] was studied using oxidative dehydrogenation of lactic acid to pyruvic acid as a reaction probe. The structure and surface area are different depending on the differences in the source of starting materials as well as in the preparing methods. However, the specific activity, activity per unit surface area, is little affected with the variation in the structure. By the reduction and reoxidation, the catalytic activity clearly increases.