Resumption of mitosis during post-thaw culture: a key parameter in selecting the right embryos for transfer

A new oxidative pathway for the degradation of caffeine(1,3,7-Trimethylxanthine, I) by a mixed culture consisting of strains belonging to the genera Klebsiella and Rhodococcus is presented. The mixed culture does not initiate degradation by N-demethylation either complete or partial, but instead carries out oxidation at the C-8 position resulting in the formation of 1,3,7-trimethyluric acid (TMU, II) which further gets degraded to 3,6,8-trimethylallantoin (TMA, III). Both TMU and TMA are hitherto not shown to be formed in the microbial system. Further degradation of TMA (III) by caffeine grown cells yields dimethylurea (VII) as one of the metabolites. Oxygen uptake studies indicated that caffeine(I) grown cells oxidized TMU(II), TMA (III), glyoxalic acid (VI), dimethylurea(VII), and monomethylurea(V), but not monomethyl and dimethyluric acids. The mixed culture does not accept theophylline(1,3-dimethylxanthine), theobromine(3,7-dimethylxanthine), and paraxanthine(1,7-dimethylxanthine) as the carbon source.     

A comparison of CCS tandem overload controls

In this paper we analyse issues associated with overloads in tandem switching systems in Common Channel Signalling (CCS) networks. In particular, we examine the need for, and effectiveness of, Automatic Congestion Control (ACC), a CCS mechanism which allows a congested switching system to inform adjacent CCS nodes of its level of overload, and subsequently controls the rate at which traffic is sent to the congested node. We demonstrate the critical need for end-offices and tandem switching systems to implement some form of ACC if network performance is to be maintained during congestion, especially in tandem exchanges. In addition, we find that the presently defined ACC should be expanded to allow more levels of congestion to be reported to adjacent nodes, so that a more effective, finer grained control is produced.     

Mullite Formation by Endothermic Reaction of α-Alumina/Silica Microcomposite Particles

The formation of mullite was investigated using microcomposite powders which consist of α-alumina cores and amorphous silica coatings. Differential thermal analysis and X-ray diffraction showed that the mullitization reaction was endothermic. In contrast, mullite forms exothermically in samples prepared by sol-gel processing. The results are shown to be consistent with available thermodynamic data for mullite formation from different alumina and silica phases.     

Synthesis of heterocyclic metal complexes and their evaluation as marine antifoulants

4-Amino-3-thio-1,24-triazolidine (L₁) and 4-amino-5-thio-1,3,4-thiadiazole (L_II) as well as their metal complexes of the general formulae ML_I·2H₂O and ML_IICl (M; Pb(II), Cd(II) and Zn(II)) were prepared. With Sn(II), we obtained Sn(L_I)₂·2H₂O and SnL_IICl, respectively. The structures of the compounds were identified through elemental analysis, and IR and UV spectra measurements, in addition to thermal analysis in case of the metal complexes. The antifouling properties of the compounds were tested by their incorporation into paint formulations which were applied to PVC substrates and tested in water from Alexandria western harbour. When the compounds were added at 17·5% by volume, the coated panels were fouled after 3 months of immersion. The addition of 6·7% by volume of tributyltin oxide to 15·8% of the prepared compounds in one formulation elevated the paint efficiency and prevented fouling for 11 months. Paint containing solely tributyltin oxide at the same concentration was inactive against algae.     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

THERMODYNAMICS OF ASPHALTENE PRECIPITATION AND DISSOLUTION INVESTIGATION OF TEMPERATURE AND SOLVENT EFFECTS

Petroleum asphaltenes have been precipitated in solvent mixtures of n-heptane and toluene at various temperatures, likewise n-heptane asphaltenes have been dissolved in under similar conditions. This give added evidence to apparent hysteresis phenomenon between the two processes. The Asphaltenes have been characterized showing that although data is scattered convergence to certain structural parameters as incipient flocculation is approached. The asphaltenes are seen to consist of an associating and a non-associating part. The solubility of asphaltenes has been correlated/modelled using the Flory-Huggins equation using two different terms for the Flory parameter. A process for evaluation of best choice of solubility parameter and molar volume for the asphaltenes is proposed. Dissolution processes are seen to be best fitted by the equations. Based on these findings the asphaltenes are proposed to be formed by a colloidal and a true solution part.     

A closer look at mutation in genetic algorithms

This paper examines the influence of mutation on the behavior of genetic algorithms through a series of examples and experiments. The results provide an existence proof that mutation is a far more profound operator than has ever been recognized. Implications are discussed which point to the importance of open questions concerning genetic algorithms. The paper also reviews the implementation of the infinite population model of Vose which forms the computational basis of this investigation.     

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