Synthesis and Biocidal Activity of Some Naphthalene-Based Cationic Surfactants

In this study, different cationic surfactants were prepared by reacting dodecyl bromide with tertiary amines to produce a series of quaternary ammonium salts that were converted subsequently to stannous and cobalt cationic complexes via complexing them with stannous (II) or cobalt (II) ions. Surface properties such as surface- and interfacial-tension, and the emulsifying power of these surfactants were investigated. The surface parameters including critical micelle concentration, maximum surface excess, minimum surface area, tension lowering efficiency and effectiveness were studied. The free energy of micellization and adsorption were calculated. Antimicrobial activity was determined via the inhibition zone diameter of the prepared compounds, which was measured against six strains of a representative group of microorganisms. The antimicrobial activity of some of the prepared surfactants against sulfate reducing bacteria was determined by the dilution method. FTIR spectra, elemental analysis and a H¹ NMR spectrum were examined to confirm compound structure and purity. The results obtained indicate that these compounds have good surface properties and good biocidal effect on broad spectrum of micro organisms.     

Fully depleted n-MOSFETs on supercritical thickness strained SOI

Strained silicon-on-insulator (SSOI) is a new material system that combines the carrier transport advantages of strained Si with the reduced parasitic capacitance and improved MOSFET scalability of thin-film SOI. We demonstrate fabrication of highly uniform SiGe-free SSOI wafers with 20% Ge equivalent strain and report fully depleted n-MOSFET results. We show that enhanced mobility is maintained in strained Si films transferred directly to SiO/sub 2/ from relaxed Si/sub 0.8/Ge/sub 0.2/ virtual substrates, even after a generous MOSFET fabrication thermal budget. Further, we find the usable strained-Si thickness of SSOI significantly exceeds the critical thickness of strained Si/SiGe without deleterious leakage current effects typically associated with exceeding this limit.