Modification of ASM3 for the determination of biomass adsorption/storage capacity in bulking sludge control.

The selector activated sludge (SAS) systems are known to prevent excessive growth of filamentous microorganisms responsible for bulking sludge, but these systems were hardly ever modelled. This study aimed to develop a model capable of predicting rapid substrate removal in the SAS systems. For this purpose, the Activated Sludge Model No. 3 (ASM3) was extended with three processes (adsorption, direct growth on the adsorbed substrate under aerobic or anoxic conditions). The modified ASM3 was tested against the results of batch experiments with the biomass originating from two full-scale SAS systems in Germany. The endogenous biomass was mixed with various readily biodegradable substrates (acetate, peptone, glucose and wastewater) and the utilisation of substrate (expresses as COD) and oxygen uptake rates (OURs) were measured during the experiments. In general, model predictions fitted to the experimental data, but a considerable number of kinetic (5) and stoichiometric (2) parameters needed to be adjusted during model calibration. The simulation results revealed that storage was generally a dominating process compared to direct growth in terms of the adsorbed substrate utilisation. The contribution of storage ranged from 65-71% (Plant A) and 69-92% (Plant B).     

Modeling subthreshold SOI logic for static timing analysis

A simple, yet realistic physics-based model is introduced to describe the subthreshold drain current of a MOSFET taking into account the body- and drain-voltage dependencies, including the short channel effects. This model, verified by SPICE simulations, describes adequately the pseudotriode and pseudosaturation regions of MOS transistors operated below V/sub T/. It can be applied for predicting bulk- or partially depleted (PD) SOI CMOS circuit operation. Analytical expressions derived for the logic switching threshold and delay are applied to predict the performance of CMOS-SOI inverters.     

Algebraic theory of optimal filterbanks

We introduce an optimality theory for finite impulse response (FIR) filterbanks using a general algebraic point of view. We consider an admissible set /spl Lscr/ of FIR filterbanks and use scalability as the main notion based on which performance of the elements in /spl Lscr/are compared. We show that quantification of scalability leads naturally to a partial ordering on the set /spl Lscr/. An optimal solution is, therefore, represented by the greatest element in /spl Lscr/. It turns out that a greatest element does not necessarily exist in /spl Lscr/. Hence, one has to settle with one of the maximal elements that exist in /spl Lscr/. We provide a systematic way of finding a maximal element by embedding the partial ordering at hand in a total ordering. This is done by using a special class of order-preserving functions known as Schur-convex. There is, however, a price to pay for achieving a total ordering: there are infinitely many possible choices for Schur-convex functions, and the optimal solution specified in /spl Lscr/ depends on this (subjective) choice. An interesting aspect of the presented algebraic theory is that the connection between several concepts, namely, principal component filterbanks (PCFBs), filterbanks with maximum coding gain, and filterbanks with good scalability, is clearly revealed. We show that these are simply associated with different extremal elements of the partial ordering induced on /spl Lscr/ by scalability.     

Reactions Between Ingredients in Binary Silicate Glasses

It is demonstrated that the density of binary glasses upon variation of the molar content of the modifier in their compositions obeys a parabolic dependence, whose parameters can be used to estimate the extent and type of reactions between the components. The reaction parameters in glasses that are prone to liquation are lower by an order of magnitude and have the negative sign.     

Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.     

Development of a Continuous Segmented Flow Tubular Reactor and the “Scale‐out” Concept – In Search of Perfect Powders

The synthesis of powders with controlled shape and narrow particle size distributions is still a major challenge for many industries. A continuous Segmented Flow Tubular Reactor (SFTR) has been developed to overcome homogeneity and scale‐up problems encountered when using batch reactors. Supersaturation is created by mixing the co‐reactants in a micromixer inducing precipitation; the suspension is then segmented into identical micro‐volumes by a non‐miscible fluid and sent through a tube. These micro‐volumes are more homogeneous when compared to large batch reactors leading to narrower size distributions, better particle morphology, polymorph selectivity and stoichiometry. All these features have been demonstrated on single tube SFTR for different chemical systems. To increase productivity for commercial application the SFTR is being “scaled‐out” by multiplying the number of tubes running in parallel instead of scaling‐up by increasing their size. The versatility of the multi‐tube unit will allow changes in type of precipitate with a minimum of new investment as new chemistry can be researched, developed and optimised in a single tube SFTR and then transferred to the multi‐tube unit for powder production.     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.