Polarizational Frequency-Selective Multipath Interference Devices for Millimetric- and Submillimetric-Wave Receivers

Variants are considered of palarizational frequency-selective multipath interference devices for millimetric- and submillimetric- wave receivers. Main expressions are presented that describe their characteristics. Advantages are pointed out of the devices as compared with Fabry-Perot interferometers when solving problems of received frequency-band shaping, heterodyne noise rejection, and signal- and heterodyne-radiation transfer to mixer.     

Bio-layer management in anaerobic membrane bioreactors for wastewater treatment.

Membrane separation technology represents an alternative way to achieve biomass retention in anaerobic bioreactors for wastewater treatment. Due to high biomass concentrations of anaerobic reactors, cake formation is likely to represent a major cause of flux decline. In the presented research, experiments are performed on the effect of biomass concentration and level of gas sparging on the hydraulic capacity of a submerged anaerobic membrane bioreactor. Both parameters significantly affected the hydraulic capacity, with biomass exerting the most pronounced effect. After 50 days of continuous operation the critical flux remained virtually unchanged, despite an increase in membrane resistance, suggesting that biomass characteristics and hydraulic conditions determine the bio-layer formation rather than the membrane's fouling level. The concept of bio-layer management is introduced to describe the programmed combination of actions performed in order to control the formation of biomass layer over membranes.     

A novel InP/InGaAs TEBT for ultralow current operations

A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.     

Phosphorus‐containing polyaryloxydiphenylsilanes with high flame retardance arising from a phosphorus–silicon synergistic effect

Polyaryloxydiphenylsilanes were prepared from phosphorus‐containing diols and diphenydichlorolsilane through solution polymerization. With a stoichiometric imbalance in feed monomers, the resulting polymers exhibited moderate melting points and good processing properties. The polymers prepared showed initial decomposition temperatures above 340 °C, excellent thermal stability, high char yields at 850 °C and very high limited oxygen index values of 56–59. The polymers' char yields and their (P + Si) contents showed linear relationships. © 2003 Society of Chemical Industry     

Problems of Wastewater Treatment and Methods of Solving Them

The studies show that in the combined use of biological and chemisorption stages of treatment, a deeper degree of removal of industrial pollutants from wastewaters is attained. The chemisorption stage allows stabilizing the treatment process in different concentration-temperature drops and increasing the degree of removal of synthetic surfactants (SSF), petroleum products, and nitrogen compounds. The possibility of regulating the selectivity of the treatment process by varying the composition of the chemisorption material is demonstrated.     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

Hot carrier analysis in low-temperature poly-Si thin-film transistors using pico-second time-resolved emission microscope

We have analyzed degradation of N-channel thin-film-transistor (TFT) under dynamic stress using a pico-second time-resolved emission microscope. We have successfully detected emission at pulse fall edge for the first time. Emission intensity increased with the decrease of pulse fall time. As the degradation depended on the pulse fall time, this dependence clearly illustrates that hot electrons are the dominant cause of the degradation under dynamic stress. Based on these dependences, we proposed a model considering electron traps in the poly-Si.     

Bandpass filters with reconfigurable transmission zeros using varactor-tuned tapped stubs

In this letter, bandpass filters with one or two tunable transmission zeros are proposed. The reconfigurable transmission zeros are implemented through varactors in combination with tapped quarter-wavelength stubs. Based on mixed mode simulations including EM simulation and circuit simulation, the proposed filters were designed and fabricated on low-cost FR4 board. The measurement results verified the design concepts.     

Characterization of the Residence Time Distribution in Spray Dryers

In this work it is presented a study on the residence time distribution (RTD) of particles in a co-current pilot-plant spray dryer operated with a rotary atomization system. A nuclear technique is applied to investigate the RTD responses of spray dryers. The methodology is based on the injection of a radioisotope tracer in the feed stream followed by the monitoring of its concentration at the outlet stream. The experiments were performed during the drying of aqueous suspensions of gadolinium oxide. The RTD responses obtained experimentally presented good reproducibility, indicating that the technique applied is well suited to investigating fluid-dynamics of spray dryers. In addition to the experimental investigation, a mathematical model was used to describe the RTD experimental curves.