飞行人员骨密度与内分泌调节关系的探讨

对37名骨密度(BD)低下的飞行员(实验组)和BD正常的48名飞行员、100名地面人员(正常对照组)进行了BD和血清TT_3、TT_4、TSH IRMA、CT、PTH、E_2和T放射免疫测定。结果显示,实验组BD均值明显低于对照组(p<0.01),血清TT_3、TT_4、CT、E_2(女性)和T(男性)均值与对照组比较,大多数年龄存在着显著或非常显著差异(p<0.05或p<0.01)。同时对飞行人员BD与几种内分泌激素关系进行了探讨。     

葡萄糖电解氧化还原工艺研究

采用自制的无膜电解槽，对同时电解氧化还原葡萄糖生成葡萄糖酸和山梨醇的工艺进行了研究。所得到的最佳工艺条件为：葡萄糖浓度０．４ｍｏｌ／Ｌ，ｐＨ值１１，电流密度３Ａ／ｄｍ￣２。在此条件下电解１２ｈ，葡萄糖转化率可达９６．４％，葡萄糖酸产率８８％，山梨醇产率１０％。同时，考察了和Ｚｎ￣（２＋）加入以及ｐＨ值对电流效率的影响。     

Dependence of Silicon Carbide Product Morphology on the Degree of Mechanical Activation

Mechanical activation before carbothermic reduction can substantially enhance the formation of SiC from SiO₂and carbon mixtures. However, the morphology (e.g., particles or whiskers) of SiC formed from mechanically activated SiO₂and carbon mixtures is dependent of the degree of mechanical activation and the condition of the subsequent carbothermic reduction. These phenomena are investigated and rationalized based on the increased reactivity of the reactants and SiC formation mechanisms.     

时间分幅全息技术及其应用

本文介绍了一种对研究发动机燃烧过程有着重要应用价值的实验技术－时间分幅全息技术，本文就该技术中常常出现的重影问题做了重点研究，通过分析重影出现的根源，找到了一种消除重影的新方法，文章还举例说明了该技术在液体破碎机理问题保研究中的应用。     

搪瓷釉料新颖添加剂铝溶胶

搪瓷釉料新颖添加剂铝溶胶任岳荣（浙江省明矾石综合利用研究所３２５０２８）ＮｅｗＡｄｄｉｔｉｖｅＡｌｕｍｉｎａＳｏｌｆｏｒＧｌａｚｅｏｆＥｎａｍｅｌ￥ＲｅｎＹｕｅｒｏｎｇ（ＺｈｅｊｉａｎｇＩｎｓｔｉｔｕｔｅｏｆＣｏｍｐｒｅｈｅｎｓｉｖｅＵｔｉｌｉｚａｔ...     

P偏振光双表面反射比的角谱及其应用

p-偏振光在镀膜平板基片两面的反射光强度比值的角谱是膜层参数(折射率、消光系数和厚度)的函数.实验表明通过角谱的测量和数值模拟是精确测量薄膜参数的新途径.基于此原理,还试制出掺Sb的SnO2溶胶凝胶薄膜的光化学气敏传感器.     

Effects of Sc2O3 and MgO passivation layerson the output power of AlGaN/GaN HEMTs

The low temperature (100°C) deposition of Sc₂O₃ or MgO layers is found to significantly increase the output power of AlGaN/GaN HEMTs. At 4 GHz, there was a better than 3 dB increase in output power of 0.5×100 μm² HEMTs for both types of oxide passivation layers. Both Sc₂ O₃ and MgO produced larger output power increases at 4 GHz than conventional plasma-enhanced chemical vapor deposited (PECVD) SiN_x passivation which typically showed ⩽2 dB increase on the same types of devices. The HEMT gain also in general remained linear over a wider input power range with the Sc₂O₃ or MgO passivation. These films appear promising for reducing the effects of surface states on the DC and RF performance of AlGaN/GaN HEMTs