V波段小型化低相噪频率综合器

本文研究了一种V波段超小型低相噪频率综合器,研制了L段捷变频频综、Ku波段取样锁相源、上变频组件、倍频器等四个小型化组件.为了得到较低的相位噪声和捷变频速度,本捷变频频综采用上变频-倍频方案,其中DRO PLS保证低相位噪声性能,L波段捷变频频综保证捷变频功能.该频综尺寸为100×80×30mm³,相位噪声低于-86dBc/Hz(1kHz),捷变频时间小于40μs,杂波抑制优于-60dBc.     

Simulations of Temperature Field in HFCVD Diamond Films over Large Area

A three-dimensional model was developed to investigate the influence of various hot filaments parameters on substrate temperature fields that significantly affect the nucleation and growth of diamond films over large area by hot-filament chemical vapordeposition (HFCVD). Numerical simulated results indicated that substrate temperature varies as a function of hot filamentsnumber, radius, temperature, emissivity, the distance between filaments, and the distance between substrate and filamentsarrangement plane. When these filaments parameters were maintained at the optimal values, the homogeneous substrate temperature region of 76 mm×76 mm with the temperature fluctuation no more than 5% could be obtained by a 80 mm×80 mmhot filaments arrangement plane. Furthermore, the homogeneous region could be enlarged to 100 mm×100 mm under thecondition of supplementary hot filaments with appropriate parameters. All of these calculations provided the basis for speciallyoptimizing the hot filaments parameters to dep     

谐波齿轮机构在商业表格印刷机中的应用

从商业表格印刷机特殊要求出发，以某一具体机型的传动系统为例，提出采用谐波齿轮机构解决纵向套准的问题。并且分析研究了谐波齿轮机构的工作原理及其在商业表格印刷机中的使用。     

反铁磁晶体的红外频率特性

研究了红外频段非线性s偏振表面波在反铁磁晶体和电介质交界面上的频率特性，求出了非线性色散方程，揭示了非线性s偏振表面波存在一个临界频率，低于这个频率，非线性s偏振表面波的频率范围，发现功率不再是决定导波频率范围的唯一因素，两种材料的介电常数比在这里起了至关重要的作用。     

一种速度优化的流水线模数转换电容误差平均技术

无源电容误差平均技术是一种本质线性(Inherently Linear)的流水线模数转换电容失配校准技术,但其转换速度是传统技术的一半.为了提高速度,本文提出了一种改进的电容误差平均技术.该技术从减少一个转换周期所需的时钟相数目和减少每个时钟相的时间两个方面来优化速度.电路分析和MATLAB仿真表明,在两种典型的情况下,改进的技术能将速度提高52%(跨导放大器为开关电容共模反馈)和64%(跨导放大器为非开关电容共模反馈)以上.改进的技术更适用于高速高精度及连续工作的应用场合.     

经济实用的DSP电源解决方案

笔者介绍了两种低纹波的DSP电源解决方案:一为采用MAX1793和大电流EMI静噪滤波器NFM41P;二为改进的去耦p型滤波电路和大电流EMI静噪滤波器NFM41P。并对方案的特点及其实现进行了详细的解析。试验结果表明:所述方案的纹波小,仅100 mV左右;成本低,仅几十元;适用范围广,通过改变MAX1793芯片的输出电压,可将本方案移植到TI的C5000,C6000系列,且还可用于其他的脱机工作系统。     

D-AKAP2, a novel protein kinase A anchoring protein with a putative RGS domain

Subcellular localization directed by specific A kinase anchoring proteins (AKAPs) is a mechanism for compartmentalization of cAMP-dependent protein kinase (PKA). Using a two-hybrid screen, a novel AKAP was isolated. Because it interacts with both the type I and type II regulatory subunits, it was defined as a dual specific AKAP or D-AKAP1. Here we report the cloning and characterization of another novel cDNA isolated from that screen. This new member of the D-AKAP family, D-AKAP2, also binds both types of regulatory subunits. A message of 5 kb pairs was detected for D-AKAP2 in all embryonic stages and in all adult tissues tested. In brain, skeletal muscle, kidney, and testis, a 10-kb mRNA was identified. In testis, several small mRNAs were observed. Therefore, D-AKAP2 represents a novel family of proteins. cDNA cloning from a mouse testis library identified the full length D-AKAP2. It is composed of 372 amino acids which includes the R binding fragment, residues 333-372, at its C-terminus. Based on coprecipitation assays, the R binding domain interacts with the N-terminal dimerization domain of RIalpha and RIIalpha. A putative RGS domain was identified near the N-terminal region of D-AKAP2. The presence of this domain raises the intriguing possibility that D-AKAP2 may interact with a Galpha protein thus providing a link between the signaling machinery at the plasma membrane and the downstream kinase.     

微生物烟气脱硫技术及其研究方向

微生物烟气脱硫 ,是用含有脱硫菌的溶液作循环吸收液、以粉煤灰中Fe2 O3被离子化后产生的铁离子作催化剂和反应介质、以脱除烟气中SO2 的一项新技术 .从能源、酸度、温度、需氧类型等方面综合考虑 ,氧化亚铁硫杆菌、氧化硫硫杆菌、氧化亚铁硫螺菌可作为三层滤料生物滤池脱硫的菌种 .而选育适宜性和稳定性更强、使用寿命更长的高效菌和合适的生化反应器 ,是脱硫菌种研究的趋势 .     

碳纳米管(CNT)场发射显示器的关键技术的研究

对碳纳米管阴极的制备以及场发射显示器的真空封装技术进行了研究.利用一种新的碳纳米管生长工艺制备出了具有优良场发射性能的碳纳米管阴极.并将这种直接生长的碳纳米管薄膜作为阴极,结合一种弹性封装工艺,开发了一种具有简单字符显示功能的场发射显示器.该显示器在较低的工作电压下就可获得高亮度的显示效果,并且器件的亮度与驱动电压成较好的线性关系,这将有利于未来的碳纳米管场发射显示器实现高亮度和多级灰度显示.器件的持续工作寿命测试已经超过5500小时,充分验证了碳纳米管作为场发射阴极的应用潜力.     

深亚微米MOSFET衬底电流的模拟与分析

利用器件模拟手段对深亚微米ＭＯＳＦＥＴ的衬底电流进行了研究和分析，给出了有效的道长度，栅氧厚度，源漏结深，衬底掺杂浓度以及电源电压对深亚微米ＭＯＳＦＥＴ衬底电流的影响，发现电源电压对深亚微米ＭＯＳＦＥＴ的衬底电流有着强烈的影响，热载流子效应随电源电压的降低而迅速减小，当电源电压降低到一定程度时，热载流子效应不再成为影响深亚微米ＭＯＳ电路可靠性的主要问题。