A resource broker with an efficient network information model on grid environments

This paper describes a resource broker whose main function is to match available resources to user needs. The resource broker provides a uniform interface for accessing available and appropriate resources via user credentials. We also focus on providing approximate measurement models for network-related information using NWS for future scheduling and benchmarking. We first propose a network measurement model for gathering network-related information (including bandwidth, latency, forecasting, error rates, etc.) without generating excessive system overhead. Second, we constructed a grid platform using Globus Toolkit that integrates the resources of five schools in Taichung integrated grid environment resources (TIGER). The resource broker runs on top of TIGER. Therefore, it provides security and current information about available resources and serves as a link to the diverse systems available in the Grid.

Optimal design of CMOS pseudoactive pixel sensor (PAPS) structure for low-dark-current and large-array-size imager applications

In this paper, a pixel structure called the optimal pseudoactive pixel sensor (OPAPS) is proposed and analyzed for the applications of CMOS imagers. The shared zero-biased-buffer in the pixel is used to suppress both dark current of photodiode and leakage current of pixel switches by keeping both biases of photodiode and parasitic pn junctions in the pixel bus at zero voltage or near zero voltage. The factor of photocurrent-to-dark-current ratio per pixel area (PDRPA) is defined to characterize the performance of the OPAPS structure. It is found that a zero-biased-buffer shared by four pixels can achieve the highest PDRPA. In addition, the column sampling circuits and output correlated double sampling circuits are also used to suppress fixed-pattern noise, clock feedthrough noise, and channel charge injection. An experimental chip of the proposed OPAPS CMOS imager with the format of 352/spl times/288 (CIF) has been designed and fabricated by using 0.25-/spl mu/m single-poly-five-level-metal (1P5M) N-well CMOS process. In the fabricated CMOS imager, one shared zero-biased-buffer is used for four pixels where the PDRPA is equal to 47.29 /spl mu/m/sup -2/. The fabricated OPAPS CMOS imager has a pixel size of 8.2/spl times/.2 /spl mu/m, fill factor of 42%, and chip size of 3630/spl times/3390 /spl mu/m. Moreover, the measured maximum frame rate is 30 frames/s and the dark current is 82 pA/cm/sup 2/. Additionally, the measured optical dynamic range is 65 dB. It is found that the proposed OPAPS structure has lower dark current and higher optical dynamic range as compared with the active pixel sensor (APS) and the conventional passive pixel sensor (PPS). Thus, the proposed OPAPS structure has high potential for the applications of high-quality and large-array-size CMOS imagers.     

A fault-tolerant wormhole routing scheme for torus networks with nonconvex faults

In this paper, we present a fault-tolerant routing algorithm for torus networks by using only 4 virtual channels. The proposed algorithm is based on the solid fault model, which includes rectangular faults and many practical nonconvex faults. Previous works need at least 6 virtual channels to achieve the same fault-tolerant ability.     

Boundary effects on the optical properties of InGaN multiple quantum wells

We examine the issues of spontaneous and piezoelectric polarization discontinuity on the optical properties of 3.0-nm-thick indium gallium nitride (InGaN) multiple quantum wells (MQWs). A quench of band-edge emission from the cap GaN layer is observed when the photoexcitation source is changed from a 355- to a 248-nm laser. The interband transitions from the InGaN wells exhibit a linear dependence on the 1) spectral blue shift of /spl sim/8.5/spl times/10/sup -18/ meV /spl middot/ cm/sup 3/ and 2) change of the internal field of /spl sim/3/spl times/10/sup -14/ meV /spl middot/ cm/sup 2/ with the injected carrier density up to N/sub inj//spl sim/10/sup 19/ cm/sup -3/ at 77 K. These observations are attributed to the redistribution of photogenerated carriers in the InGaN wells due to the polarization discontinuity at the QW interface and the surface band bending effect. By incorporating an additional boundary condition of surface Fermi-level pinning into the Poisson equation and the band-structure analysis, it is shown the emission from the InGaN-GaN MQWs is dominant by the recombination between the high-lying subbands and the screening of internal field effects.     

Design, optimization, and performance analysis of new photodiode structures for CMOS active-pixel-sensor (APS) imager applications

The dark current in the active-pixel-sensor (APS) cell of a CMOS imager is known to be mainly generated in the regions of bird's beak after the local oxidation of silicon process as well as the surface damage caused by the implantation of high doping concentration. Furthermore, shallow and deep pn-junctions can improve the photo-sensitivity for light of short and long wavelengths, respectively. In this paper, two new photodiode structures using p-substrate and lightly-doped sensor implant SN- as pn-junction photodiode with the regions of bird's beak embraced by SN- and p-field implants, respectively, are proposed and analyzed to reduce dark current and enhance the overall spectral response. 5 /spl mu/m/spl times/5 /spl mu/m APS cells fabricated in a 0.35-/spl mu/m single-poly-triple-metal (1P3M) 3.3-V CMOS process are designed by using the proposed photodiode structures. As shown from the experimental results, the two proposed photodiode structures of 5 /spl mu/m/spl times/5 /spl mu/m APS cells have lower dark currents of 30.6 mV/s and 35.2 mV/s at the reverse-biased voltage of 2 V and higher spectral response, as compared to the conventional structure and other photodiode structures. Thus, the two proposed new photodiode structures can be applied to CMOS imager systems with small pixel size, high resolution, and high quality.     

A module‐integrated isolated solar micro‐inverter without electrolytic capacitors

This paper presents a module‐integrated isolated solar micro‐inverter. The studied grid‐tied micro‐inverters can individually extract the maximum solar power from each photovoltaic (PV) panel and transfer to the AC utility system. A harmonic suppression technique is used to reduce the DC‐bus capacitance. Electrolytic capacitors are not needed in the studied solar micro‐inverter. High conversion efficiency, high maximum power point tracking accuracy and long lifespan can be achieved. The operation principles and design considerations of the studied PV inverter are analyzed and discussed. A laboratory prototype is implemented and tested to verify its feasibility. Copyright © 2012 John Wiley & Sons, Ltd.     

Effect of baffle height and Reynolds number on fluid mixing

In this paper, both numerical simulation and experiment were performed to investigate the mixing process within mixing chambers of the planar micromixer with three baffles at varied baffle height. The presence of three baffles causes the flow to separate and creates the recirculation and back flow within mixing chambers. The fluid mixing was greatly influenced by the baffle height and Reynolds number (Re) related to the size of recirculation zone. Larger baffle height or Re produces larger recirculation zone and convective mixing. The micromixer with 350 μm high baffles in 400 μm wide channel results in over 95% mixing at Re = 80 from the simulation results. The experiment results confirm the above simulation results qualitatively. This planar micromixer has the merits of simple design and easy fabrication as compared to the three-dimensional passive micromixers.     

High-power broad-area InGaNAs/GaAs quantum-well lasers in the 1200 nm range

High-power broad-area InGaNAs/GaAs quantum-well (QW) edge-emitting lasers on GaAs substrates in the 1200 nm range are reported. The epitaxial layers of the InGaNAs/GaAs QW laser wafers were grown on n⁺-GaAs substrates by using metal-organic chemical vapor deposition (MOCVD). The thickness of the InGaNAs/GaAs QW layers is 70 Å/1200 Å. The indium content (x) of the In_xGa_1−xN_yAs_1−y QW layers is estimated to be 0.35-0.36, while the nitrogen content (y) is estimated to be 0.006-0.009. More indium content (In) and nitrogen content (N) in the InGaNAs QW layer enables the laser emission up to 1300 nm range. The epitaxial layer quality, however, is limited by the strain in the grown layer. The devices were made with different ridge widths from 5 to 50 μm. A very low threshold current density (J_th) of 80 A/cm² has been obtained for the 50 μm × 500 μm LD. A number of InGaNAs/GaAs epi-wafers were made into broad-area LDs. A maximum output power of 95 mW was measured for the broad-area InGaNAs/GaAs QW LDs. The variations in the output powers of the broad-area LDs are mainly due to strain-induced defects the InGaNAs QW layers.