流量比对等离子体基团分布和薄膜结构的影响

使用光强标定的发射光谱(AOES)测量了CHF3／C6H6混合气体的微波电子回旋共振(ECR)放电等离子体中基团的分布状态。实验发现随着CHF3流量的增加，成膜基团CF、CF2、CH等的相对密度增大，而刻蚀基团F的密度也会增加，从而使得a—C：F薄膜的沉积速率降低。同时红外吸收谱(IR)分析表明，在高CHF3流量下沉积的a—C：F薄膜中含有更高的C—F键成分。可见在a—C：F薄膜的制备中CHF3／(CHF3 C6H6)流量比是重要的控制参量。     

Analysis of the mechanism of die soldering in aluminum die casting

A mechanism of soldering of an aluminum alloy die casting to a steel die is proposed. A soldering critical temperature is postulated, at which iron begins to react with aluminum to form an aluminum-rich liquid phase and solid intermetallic compounds. The liquid joins the die with the casting upon solidification. The critical temperature is determined by the elements in both the casting alloy and the die material and is equal to the solidus temperature of the resulting alloy. The critical temperature is used to predict the onset of die soldering, and the local liquid fraction is related to the soldering tendency. Experiments have been carried out to validate the concept and to determine the critical temperature for die soldering in an iron-aluminum system. Thermodynamic calculations are used to determine the critical temperature and soldering tendency for the cases of pure aluminum and a 380 alloy in a steel mold. Factors affecting the soldering tendency are discussed, and methods for reducing die soldering are suggested.     

不倒翁式偏心防斜钻具的设计

目前所使用的各种钻具主要是靠钻具本身的重力来产生降斜力,在井斜角很小时,降斜力一般很小,在某些区块钻井时不能满足防斜要求。据此,设计了一种不倒翁式偏心防斜钻具。该钻具有1段钻铤,钻铤的两端各有1个偏心稳定器,钻铤外表面有一半圆形的偏心块,在钻铤和偏心块之间有轴承结构。利用不倒翁原理,当井斜超过一定值时,偏心块会在重力作用下自动停留在井眼低边,这样就可以将此处的钻柱顶到井眼的高边上去,从而产生一个很大的降斜力,使井斜得以有效控制。     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

电荷耦合器件积分时间对微型成像系统成像质量的影响

在光圈固定的情况下，确定合适的积分时间对于提高微型电荷耦合器件(CCD)成像系统的成像质量，增强微型飞行器的侦察能力具有十分重要的意义。本文讨论了决定CCD积分时间的各种因素，重点研究了适用于微型飞行器的CCD成像系统的积分时间与像移的关系，并进一步推导了计算像移量的相关数学模型。利用该模型对不同积分时间内采集的运动图像进行了像质评价，结果表明，在保证曝光量的前提下，当像移量被限制在1个像素内时，可以获得相对理想的运动图像像质。     

Finite element piezothermoelasticity analysis and the active control of FGM plates with integrated piezoelectric sensors and actuators

 An efficient finite element model is presented for the static and dynamic piezothermoelastic analysis and control of FGM plates under temperature gradient environments using integrated piezoelectric sensor/actuator layers. The properties of an FGM plate are functionally graded in the thickness direction according to a volume fraction power law distribution. A constant displacement-cum-velocity feedback control algorithm that couples the direct and inverse piezoelectric effects is applied to provide active feedback control of the integrated FGM plate in a closed loop system. Numerical results for the static and dynamic control are presented for the FGM plate, which consists of zirconia and aluminum. The effects of the constituent volume fractions and the influence of feedback control gain on the static and dynamic responses of the FGM plates are examined. Received: 13 March 2002 / Accepted: 5 March 2003 The work described in this paper was supported by a grant awarded by the Research Grants Council of the Hong Kong Special Administrative Region, China (Project No. CityU 1024/01E).     

Verbal Representation and Therapeutic Change in Anaclitic and Introjective Inpatients.

This study examined the relation between changes in clinical functioning and changes in verbal expression in 81 seriously disturbed and treatment-resistant young adults seen in a comprehensive, psychoanalytically oriented inpatient treatment. Clinical functioning was evaluated with a battery of clinical and social measures. Verbal representations were assessed using computer-assisted scoring of Thematic Apperception Test responses. Changes in the frequency of verbal content and style in the narratives of these patients covaried with changes in clinical functioning. Significantly different covariations of verbal and clinical change, particularly differences in covariates of referential activity, were found for patients with anaclitic versus introjective personality configurations. The implications of these findings for understanding and treating severe psychopathology are discussed. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers

The combination of device speed (f/sub T/, f/sub max/ > 150 GHz) and breakdown voltage (V/sub bceo/ > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-/spl mu/m-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V/sub pp/ differential output swing, a distributed 40-Gb/s driver amplifier with 6-V/sub pp/ differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product.