High efficiency fine boring of monocrystalline silicon ingot by electrical discharge machining

This article deals with high efficiency and high accuracy fine boring in a monocrystalline silicon ingot by electrical discharge machining (EDM). In manufacturing process of integrated circuits, a plasma-etching process is used for removing oxidation films. This process has recently been examined for use of monocrystalline silicon as the electrode to minimize the contamination. However, it is difficult to machine silicon accurately by the conventional diamond drilling method, because the material removal is due to brittle fracture. The machining force in the EDM process is very small compared with that in conventional machining, therefore, the possibility of high efficiency and high accuracy boring holes in silicon ingot by EDM is experimentally investigated. The removal rate of monocrystalline silicon by EDM is much higher than that of steel, while the electrode wear is extremely small. The improvement method leads to a better hole without chipping at the exit of hole or sticking of the insulator on the wall of hole. Furthermore, it is proved that even a high aspect ratio of about 200 boring is possible.     

Photodegradation of poly(2,6-dimethyl-1,4-phenylene oxide) film with metal isopropylxanthates

The effect of metal (Co and Zn) isopropylxanthates over the range of 0.3 to 2.5% (w/w) on the photodegradation of poly(2,6-dimethyl-1,4-phenylene oxide) film was examined, by changes in the carbonyl i.r. absorption, hydroperoxide, weight average molecular weight and quantum yield of the polymer samples. The data have been processed to yield the heats of activation of the system. The photodegradation of the polymer was affected by the kind of metal, concentration of the xanthates, wavelength of irradiated light, and by the temperature. Zinc isopropylxanthate was found as a photostabilizer whereas cobalt isopropylxanthate merely enhanced the degradation. The presence of metal xanthates changed the u.v. spectra of the polymer.     

SiO2-Al2O3 metastable phase equilibrium diagram without mullite

A metastable binary phase diagram between SiO₂ (cristobalite) and-Al₂O₃ (corundum) in the absence of any mullite phase is presented. A eutectic is indicated at a temperature of 1260° C and a composition of 18 wt% ( 12 mol%) Al₂O₃. The liquidi of the proposed metastable system were positioned on the basis of the thermodynamic data calculated from the stable equilibrium diagram of Aksay and Pask [2]. Experimental evidence is also presented. A SiO₂-Al₂O₃ melt containing 80 wt% Al₂O₃ cooled at a slow rate in sealed molybdenum crucibles shows crystalline Al₂O₃ plus a glass phase whose composition followed the calculated extension of the stable Al₂O₃ liquidus to lower temperatures. Compacts of cristobalite—corundum mixtures were fired at subsolidus temperatures to estimate the eutectic temperature experimentally. The proposed metastable phase diagram effectively explains the formation of non-crystalline phases in subsolidus reactions, and microstructure obtained on solidification of high alumina melts.