CdS thin films were prepared by spray pyrolysis techniques. Variable angle spectroscopic ellipsometry was used for optical
constant calculations. Multiple angle measurements were taken in the most sensitive angle of incidence region. The sensitive
regions of angle of incidence were obtained theoretically using 3-dimensional graph ofδψ andδΔ. Real partn and imaginary partk of the complex refractive index of the samples were calculated in the wavelength range 470–650 nm, taking into account surface
roughness. Bruggeman’s effective medium approximation is used for analysis of the surface rough layer of the thin films. 相似文献
Monte Carlo modeling of the Kalpakkam Mini Reactor (KAMINI) has been carried out for the first time by using Monte Carlo code (MCNP4A) and continuous energy cross-sections. The safety control plate (SCP) drop experiment is simulated and the computed integral worth of the SCPs is compared with the measured value. The measured axial neutron flux profile and foil reaction rates in one of the in-core irradiation location and the foil reaction rates at the west beam port are also compared with the predicted results. The agreement between measurements and calculations is quite satisfactory. It is confirmed from the calculation and measurement that the north thimble is having nearly 10–20% higher neutron flux as compared to the south thimble depending on the exact elevation. 相似文献
Formal kinetic studies of the epoxidation and hydroxylation of maleic acid by hydrogen peroxide (H2O2) have been carried out in the presence of a molybdenum salt, as catalyst, immobilized on Amberlite IRA-400 polymer resin in the chloride form. Immobilization of the catalyst on the resin was by a sorption process. Hydroxylation by immobilized catalysis afforded higher H2O2 selectivity and increased product yield in excess of 85%. Analysis of kinetic results shows that the reaction in the pseudo-homogeneous system follows the typical pseudo-zero order dependence on H2O2 concentration and is first order with respect to maleic acid concentration. However, the rate model developed for the immobilized catalyst fits the experimental data smoothly and parameter estimation using the Lineweaver–Burk plot fulfils the kinetic consistency tests without additional mathematical manipulation. The problem of activity and stability of the present catalyst was also investigated. 相似文献
Hydroxyapatite (HAP) microspheres with peculiar spheres-in-sphere morphology were prepared by using oil-in-water emulsions
and solvent evaporation technique. Ethylene vinyl acetate co-polymer (EVA) was used as the binder material. Preparation of
HAP/EVA microspheres was followed by the thermal debinding and sintering at 1150°C for 3 h to obtain HAP microspheres. Each
microsphere of 100–1000 μm was in turn composed of spherical hydroxyapatite granules of 2–15 (μm size which were obtained
by spray drying the precipitated HAP. The parameters such as percentage of initial HAP loading, type of stabilizer, concentration
of stabilizer, stirring speed and temperature of microsphere preparation were varied to study their effect on the particle
size and geometry of the microspheres obtained. It was observed that these parameters do have an effect on the size and shape
of the microspheres obtained, which in turn will affect the sintered HAP microstructure. Of the three stabilizers used viz.
polyoxyethylene(20) sorbitan monopalmitate (Tween-40), sodium laurate and polyvinyl alcohol (PVA), only PVA with a concentration
not less than 0.1 wt% showed controlled stabilization of HAP granules resulting in spherical microspheres of required size.
Morphologically better spherical microspheres were obtained at 20°C. Increasing the stirring speed produced smaller microspheres.
Smaller microspheres having size < 50 μm were obtained at a stirring speed of 1500 ±50 rpm. A gradual decrease in pore size
was observed in the sintered microspheres with increase in HAP loading. 相似文献
BaMnxTi1-xO3 thin film on a silicon substrate has been prepared through the sol–gel spin coating process. The ferroelectric BaMnxTi1-xO3 film shows the predominant perovskite ABO3 structure for x?=?0.2 and 0.3 for the annealing temperature of 650 °C under nitrogen ambient. The metal contact on top and silicon substrate at the bottom of the film forms a Metal-Ferroelectric-Semiconductor capacitor structure. In BaMnxTi1-xO3, the deposited film changes its structural and electrical properties as the concentration value of ‘x’ is changed. The crystal structure of the deposited film has been analysed by XRD. FESEM, EDS and XPS characterization of the film were carried out to discuss the change in the film structure with the change in the value of ‘x’. The Capacitor vs. Voltage (C–V), Current vs. Voltage (I–V), Charge vs. Voltage (Q–V), Endurance, PUND (Positive Up Negative Down) and dielectric study of the films are discussed. Memory window of 8.6 V and leakage current of few nA are obtained. The deposited ferroelectric film shows an endurance of?~?1011 iteration cycle for the PUND pulse. The optimized doping molar concentration ‘x’ in BaMnxTi1-xO3 shows favourable results for ferroelectric non-volatile memory application with a low cost fabrication method.
Tris(hydroxymethyl)aminomethane was successfully esterified with saturated and unsaturated long-chain fatty acids. The resulting
amino-triester intermediates were successively reacted with chloroacetyl chloride, sodium azide, and C60 fullerene. Spectral evidence showed that the aziridine ring is joined to the junction of [6,6]-fused rings of the fullerene.
The structures of the various C60 fullerene derivatives bearing a long-chain saturated or unsaturated triester system were characterized by spectroscopic and
spectrometric methods. 相似文献
This paper proposes the charge plasma based dual electrode doping-less tunnel FET (DEDLTFET). The paper compares the device performance of the conventional doping-less TFET (DLTFET) and doped TFET (DGTFET). DEDLTEFT gives the superior results with high ON state current (ION ~ 0.56 mA/μm), ION/IOFF ratio ~ 9.12 × 1013 and an average subthreshold swing (AV-SS ~ 48 mV/dec). The variation of different device parameters such as channel length, gate oxide material, gate oxide thickness, silicon thickness, gate work function and temperature variation are done and compared with DLTFET and DGTFET. Through the extensive analysis it is found that DEDLTFET shows the better performance than the other two devices, which gives the indication for an excellent future in low power applications. 相似文献