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71.
A very-low-noise 0.5 ?m-gate GaAs f.e.t. is realised by using intentional side etching of an Au/Ti double layer as the Schottky-gate metal. At 12 GHz, the minimum noise figure is 2.1 dB, with 7.6 dB associated gain at a bias of VD = 4 V, ID= 10 mA. Maximum stable gain is 14 dB at VD = 4 V, ID = 30 mA.  相似文献   
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Tool wear prediction and economics in machining stepped parts   总被引:1,自引:0,他引:1  
For analysing economics of machining cylindrical stepped parts, tool life must be predicted. In this paper, tool life tests, to obtain tool life changing cutting speed before the tool reaches tool life criterion under a constant speed, are performed and the tool life is calculated. Using the results of the calculations machining economics of various forms of stepped parts for the constant spindle rpm method and the constant cutting speed method, are analysed.  相似文献   
74.
The present paper describes the effect of grinding a kaolinite/aiuminum-trihydroxide mixture using a planetary ball mill on the structure of the ground product and the mean thermal expansion coefficients of samples sintered from the unground and ground mixtures. The size reduction of the mixture predominates in the early stage of grinding and the obtained fine particles aggregate subsequently with an increase in grinding time. The crystal structure of the mixture is collapsed easily into a disordered one, of which amount increases with an increase in grinding time. Only mullite phase was detected in the sintered body of the ground products at relatively lower temperature 1523K except for anatase as an inherent impurity, whereas corundum, cristobalite and Al-Si spinel phases besides mullite were formed in the sintered body of the unground mixture. The thermal expansion coefficients of sintered bodies of the 120 minutes-ground mixture are considerably lower than those of the unground mixture by about 10%. Consequently, the planetary milling enables us to improve the uniform mixing state at the atomic scale resulting in direct formation of mullite with high purity at relatively low temperature with a lower thermal expansion coefficient of the sintered body.  相似文献   
75.
The laminate method for studying the permeability and diffusivity of moistened cellophane to gases is described and the humidity dependence of the transport parameters for H2, He, and Ne is presented. In the relative humidity region of about 0% to 60%, a small increase in the permeability was observed, which is caused by a comparatively small increase in the diffusivity owing to the plasticizing effect of sorbed water and a decrease in the solubility. On the other hand, an extremely large increase in the permeability observed in the relative humidity region above 60% is mainly based on the diffusion coefficient of gas enhanced by the swelling effect of sorbed water. The presence of a minimum in the solubility–relative humidity curves has been confirmed and is discussed.  相似文献   
76.
The center temperature of Li2O pellets under neutron irradiation was measured using an encapsuled pin. The surface temperatures of the pellets and the pellet/cladding heat transfer coefficients were estimated on the basis of the well-known conductivity integral.  相似文献   
77.
The environmental stability in distilled water and the failure mechanism of cathodically chromated tin, lead, and lead/tin alloy joints bonded with an ethylene–acrylic acid copolymer have been investigated by T-peel tests and ESCA and SEM analyses of the fractured surfaces. The peel strength of chromated lead/tin alloy joints and of both untreated and chromated tin joints is kept unchanged with water immersion, whereas that of untreated lead/tin alloy joints and of both untreated and chromated lead joints decreases rapidly with water immersion. ESCA and SEM observations show that lead/tin alloy surfaces consist of both lead and tin phases and that the tin phase interface deteriorates gradually with water immersion after premature deterioration of the lead phase interface. The stabilization effect of chromate treatments for lead/tin alloy joints is due to retardation of the underfilm corrosion of the tin phase.  相似文献   
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80.
Pulsed laser annealing was carried out for n-type semiconducting GaAs in air, 1 bar nitrogen, 1 bar argon, and 100 bar argon gas ambiences. Depth profiles of the atomic ratio measured by SIMS indicate that pulse annealing in air results in As loss and penetration of oxygen into the crystal, both of which affect dopant redistribution and deteriorate electrical properties of the annealed layer. High electrical activity (100%) and electron mobilities were achieved for high-dose implants of Si+ (1 × 1015 cm−2) by pulsed laser annealing in the high-pressure ambience.  相似文献   
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