Evaluation of TEM samples of an Mg-Al alloy prepared using FIB milling at the operating voltages of 10 kV and 40 kV

Transmission electron microscopy (TEM) samples of an Mg-Al alloy has been prepared using a Ga-focused ion beam (FIB) milling at two different operating voltages of 10 kV and 40 kV to investigate the influence of the FIB energy on the sample quality. The fine structures of the samples have been studied using a high resolution TEM, and the concentration of the implanted Ga was analysed using an energy dispersive X-ray (EDX) analysis. The result of the TEM observation revealed that point defects were introduced to the sample finally milled at 40 kV but not at 10 kV. However, crystal lattice images and electron diffraction patterns were clearly observed on both the samples. The typical influence of the FIB energy was indicated in the elemental analysis. The relative Ga concentration in the thin sample finally milled at 10 kV was 1.0-2.0 at% that is less than half of 4.0-6.0 at% of the Ga concentration in the sample finally milled at 40 kV. A comparison between the experimental results of the Ga concentration measurement with simulation was also discussed.     

Thermomagnetic Effects in High-Mobility PbTe Films

The narrow-gap compound semiconductor PbTe has high Hall mobility. The Fermi surface at the L-point in the Brillouin zone has large anisotropy. In this work, we measured thermomagnetic effects in PbTe thin films to confirm anisotropy of the Nernst coefficient A _Ne and show Nernst mobility from the ratio of A _Ne and the Seebeck coefficient S: μ _Ne = A _Ne/S. Angular dependences of the Nernst voltage show that A _Ne is independent of the angle between the temperature gradient and the magnetic field, because of the high L-point symmetry. The calculated Nernst mobility was compared with the Hall mobility. Because the former is smaller, the Mott equation cannot explain the Seebeck coefficient at room temperature.     

Interfacial Reaction Between Cu Substrates and Zn-Al Base High-Temperature Pb-Free Solders

Chemical reactions between Cu substrates and Zn-Al high-temperature solder alloys, Zn-4Al and Zn-4Al-1Cu (mass%), at temperatures ranging from 420°C to 530°C were experimentally investigated by a scanning electron microscope using backscattered electrons (SEM-BSE) and an electron probe microanalyzer (EPMA). Intermediate phases (IMPs), β(A2) or β′(B2), γ(D8₂), and ε(A3) phases formed and grew during the soldering and aging treatments. The consumption rate of the IMP for Cu substrates is described by the square root of t in both the alloys, while the additional Cu in the molten Zn-Al alloy slightly suppresses the consumption of Cu substrates. The growth of IMPs during soldering treatment is controlled by the volume diffusion of constituent elements, and its activation energy increases in the order of Q _ε < Q _γ < Q _β. In view of the aging process, the growth of IMPs is considered to be controlled by the volume diffusion. In particular, the layer thickness of γ rapidly grows over 200°C, although the thickness of the β layer grows very slowly.     

D‐A1‐D‐A2 Backbone Strategy for Benzobisthiadiazole Based n‐Channel Organic Transistors: Clarifying the Selenium‐Substitution Effect on the Molecular Packing and Charge Transport Properties in Electron‐Deficient Polymers

Unipolar n‐type semiconducting polymers based on the benzobisthiadiazole (BBT) unit and its heteroatom‐substituted derivatives are for the first time synthesized by the D‐A₁‐D‐A₂ polymer‐backbone design strategy. Selenium (Se) substitution is a very effective molecular design, but it has been seldom studied in n‐type polymers. In this study, within the similar conjugated framework, the Se substitution effects on the optical, electrochemical, solid‐state polymer packing, electron mobility, and air‐stability of the target unipolar n‐type polymers are unraveled. Replacing the sulfur (S) atom in the thiadiazole heterocycles with the Se atom leads to narrower bandgaps and deeper lowest unoccupied molecular orbital (LUMO) levels of the n‐type polymers. Furthermore, the Se‐substituted polymer (pSeN‐NDI) shows shorter lamellar packing distances and stronger edge‐on π–π stacking interactions than its S‐counterpart (pSN‐NDI), as observed by the two‐dimensional grazing‐incidence wide‐angle X‐ray scattering (GIWAXS) patterns. With the deeper LUMO level and thin‐film microstructures suitable for transistors, pSeN‐NDI exhibits four‐fold higher electron mobilities (μ_e) than pSN‐NDI. However, the other Se‐containing polymer, pSeS‐NDI, forms rather amorphous film structures, which is caused by its limited thermal stability and decomposition during the thermal annealing processes, thus giving rise to a lower μ_e than its S‐counterpart (pBBT‐NDI). Most importantly, pBBT‐NDI demonstrates an electron mobility of 0.039 cm² V^?1 s^?1, which is noticeable among the unipolar n‐type polymers based on the BBT and its analogs.     

Cryptanalysis and Improvement of Robust Deniable Authentication Protocol

A deniable authentication protocol enables a receiver to identify the source of a given message, but the receiver cannot prove the source of the message to a third party. Recently, Yoon et al. (Wirel Pers Commun 55:81–90, 2010) proposed a robust deniable authentication protocol based on ElGamal cryptosystem. Although they proved that their protocol satisfies the deniable authentication, mutual authentication and confidentiality, we show that their protocol does not satisfy the deniable authentication property. The receiver can prove the source of a given message to a third party. In addition, we propose an improved protocol that removes this weakness.     

Virtual Fiber Configuration for Dynamic Lightpath Establishment in Large-scaled Optical Networks

Recently, progress has been made in the Generalized Multi-Protocol Label Switching (GMPLS) and Automatic Switched Optical Networks (ASON) standardizations. These technologies realize construction of large-scaled optical networks, interconnections among single-domain Wavelength Division Multiplexing (WDM) networks, and direct communication over multi-domain WDM networks. Meanwhile, it is known that the topology of the Internet exhibits the power-law attribute. Since the topology of the Internet, which is constructed by interconnecting ASs, exhibits the power-law, there is a possibility that large-scale WDM networks, which are constructed by interconnecting WDM networks, will also exhibit the power-law attribute. One of the structural properties of a topology that adheres to the power-law is that most nodes have just a few links, although some have a tremendous number of them. Another property is that the average distance between nodes is smaller than in a mesh-like network. A natural question is how such a structural property performs in WDM networks. In this paper, we first investigate the property of the power-law attribute of physical topologies for WDM networks. We compare the performance of WDM networks with mesh-like and power-law topologies, and show that links connected to high-degree nodes are bottlenecks in power-law topologies. To relax this, we introduce a concept of virtual fiber, which consists of two or more fibers, and propose its configuration method to utilize wavelength resources more effectively. We compare performances of power-law networks with and without our method by computer simulations. The results show that our method reduces the blocking probabilities by more than one order of magnitude.     

Tunable Optical Notch Filter Realized by Shifting the Photonic Bandgap in a Silicon Photonic Crystal Line-Defect Waveguide

A tunable optical notch filter was realized by thermally shifting the TM-like (the light's electric field perpendicular to the substrate) bandgap of a silicon photonic crystal slab W1 line-defect waveguide with silica cladding. This device is compact-its footprint is 340times16 mum², excluding the electrode pads. The 3-dB bandwidth of the device was about 5 nm, and the extinction ratio at the center wavelength was as high as 40 dB. A maximum center wavelength shift of 17.9 nm was attained at a heating power of 0.7W, with a tuning efficiency of 25.5 nm/W. The tuning response time was less than 100 mus     

Effect of Protective Layer and Etch Process on Silicon Molded Micro Peltier Arrays

We used silicon molding and examined the protective layer on a silicon molded Peltier array. Both a large p-type array and n-type array were created with the protective layer. Because the conventional bismuth-antimony-telluride (BiSbTe) alloys react with XeF₂ etching gas rapidly, we need to place the protective layer at the interface between the silicon and the thermoelectric material using the water vapor thermal oxidization method. As the xenon difluoride selective etching ratio of silicon and SiO₂ is about 100:1, the protective layer is damaged if the removal ratio of silicon is high and the etching process time is long. Next we examined a new method involving both an anisotropic process using deep reactive ion etching (DRIE) and an isotropic process using XeF₂ etching, and we formulated an etching process that causes no damage to the protective layer.     

A comparative study of DPSK and OOK WDM transmission over transoceanic distances and their performance degradations due to nonlinear phase noise

We have compared experimentally the transmission performance of return-to-zero differential phase-shift keying (RZ-DPSK) with RZ-ON-OFF keying (OOK), nonreturn-to-zero differential phase-shift keying (NRZ-DPSK), and NRZ-OOK for 100/spl times/10-Gb/s transmission with a spectral efficiency of 0.22 b/s/Hz over transoceanic distances. The Q degradation of the RZ-DPSK after transmission over 9180 km was 3 dB greater than that of RZ-OOK. The experimental results clearly showed the major cause of degradation for DPSK is not cross-phase modulation but self-phase modulation. The calculated nonlinear phase noise, i.e., the Gordon-Mollenauer effect, agreed with the experimental results. A distributed-Raman-amplifier assisted erbium-doped-fiber-amplified transmission line acted well in reducing the nonlinear phase noise.