Setting the trap for hot carriers [MOS VLSI]

The device degradation under ac and dc stress have been discussed and a relationship between the two has been established,. We have shown that the commonly used lifetime criteria of 10% linear current degradation for 10 years for a transistor under dc stress is overly conservative for representing the circuit operating lifetime. Using experimental and simulated data for inverter chains, we proposed that a meaningful equivalent lifetime based on 10% I_dl degradation under dc stress is 1 year lifetime (for a 10 year circuit lifetime based on 54b degradation in ring oscillator frequency). We also compared this criteria to actual circuit degradation for microprocessors and a DRAM. For DSP microprocessors with 0.8 μm LDD transistors, the projected lifetime was more than 200 years at 5.5 V, with a corresponding 10% I _dr lifetime of 20 years. For 1 Mb DRAMs with 1 pm LDD transistors, the 5% speed degradation lifetime at 5.5 V was more than 100 years, whereas the individual transistors had 10% I_dl lifetime of 4 years. These circuit results support the 10% I_dl transistor lifetime. We believe these criterion should be very safe and reasonable for digital IC chips currently in the field, as well as those in future design and development     

Convergence of iterated boolean sums of simultaneous approximants

Explicit error estimates are given for the iterated Boolean sum of a sequence of simultaneous approximants; the rate of convergence is shown to be improved for smooth functions. The general results are applied in the case of the Bernstein, Durrmeyer and Stancu operators.     

LEICA: a low energy ion composition analyzer for the study of solarand magnetospheric heavy ions

The SAMPEX (Solar, Anomalous, and Magnetospheric Particle Explorer) LEICA instrument is designed to measure ~0.5-5-MeV/nucleon solar and magnetospheric ions over the range from He-Ni. The instrument is a time-of-flight (TOF) mass spectrometer, which measures particle TOF over an ~0.5-m path and the residual energy deposited in an array of Si solid state detectors. Large-area microchannel plates are used, resulting in a large geometrical factor for the instrument (0.6 cm² sr), which is essential for accurate compositional measurements in small solar flares and in studies of precipitating magnetospheric heavy ions     

Thermal stability of interfaces between metals and InP-based materials

The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively. Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor interfaces were the most stable.     

Analysis and design-optimization of LCC resonant inverter forhigh-frequency AC distributed power system

The analysis and design of an LCC resonant inverter for a 20 kHz AC distributed power system are presented. Several resonant converter topologies are assessed to determine their suitability for high efficiency power conversion, under resistive and reactive loads. Two LCC-resonant inverter designs were implemented. One with all switches operating with zero voltage switching (ZVS), and another with two switches operating with ZVS and two switches with zero current switching (ZCS). The experimental results are presented along with a performance comparison of the two versions     

Pyrolysis of tertiarybutylphosphine at low pressure

The pyrolysis of tertiarybutylphosphine (TBP) has been studied in the low pressure conditions used for chemical beam epitaxy (CBE). The pyrolysis studies were carried out in low pressure reactors of two different configurations, one of which is a cracker cell designed for use in a CBE system. The reaction products were studied using a quadrupole mass spectrometer. The products observed are accounted for by a reaction mechanism involving homolysis of the parent TBP molecule to produce PH₂ and C₄H₉ radicals. These undergo subsequent reactions to form the stable products C₄H₈, PH₃ and H₂, with smaller amounts of P and P₂ being produced. The production of the sub-hydride PH₂ using this cracker cell design indicates that the use of partially cracked TBP may be a promising technique for reducing the amount of carbon incorporated into the growing epitaxial layer.     

Electrical passivation in hydrogen plasma exposed GaN

Lightly p-doped (3×10¹⁷ cm^-3) GaN grown on GaAs substrates by metal organic molecular beam epitaxy (MOMBE) shows deactivation of the residual acceptors on exposure to a microwave (2.45 GHz) hydrogen plasma at 250°C. Subsequent annealing to 350°C produces further dopant passivation, while higher temperatures (450°C) restore the initial conductivity. These results suggest that hydrogen carrier gases should be avoided during vapour phase growth of III-V nitrides     

Reconfigurable FSS response from two layers of slotted dipolearrays

Two layer frequency selective surfaces (FSS) comprised of aperture elements on a single dielectric substrate are used to produce extremely narrow and angularly stable passband transmission responses. Experimental results are compared with predictions to verify a computer model which is based on solving a pair of coupled aperture integral equations. Reductions in bandwidth of up to a factor of seven have been achieved