Pyrolysis of Miscanthus Giganteus and wood pellets: TG-FTIR analysis and reaction kinetics

Characterisation of two biomass fuels (pelletised Miscanthus Giganteus and wood) was performed using thermogravimetric analysis with measurement of products by means of Fourier transform infrared spectroscopy (TG-FTIR). Three heating rate profiles were applied (10, 30 and 100 °C/min), with a final temperature of 900 °C. HCN and HNCO were found to be the major N-products, while the NH₃ fraction was detected to a minor extent. Kinetic parameters were obtained from the TG-FTIR results using a model based on parallel first-order reactions with a Gaussian distribution of activation energies. On the basis of the above kinetic analysis and product yields, input files for the functional group-devolatilisation, vaporisation, cross-linking biomass-pyrolysis model were prepared. The fit of model parameters to TG-FTIR product-evolution data was found to be generally good, but the model-predicted yields for some species did not fit experimental data at all heating rates. Further improvements in the model are needed to resolve above difficulty.     

Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.     

Improvement of AlGaInP light emitting diode by sulfide passivation

The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated.     

Detecting and characterising returns in a pulsed ladar system

A new multi-spectral laser radar (ladar) system based on the time-correlated single photon counting, time-of-flight technique has been designed to detect and characterise distributed targets at ranges of several kilometres. The system uses six separated laser channels in the visible and near infrared part of the electromagnetic spectrum. The authors present a method to detect the numbers, positions, heights and shape parameters of returns from this system, used for range profiling and target classification. The algorithm has two principal stages: non-parametric bump hunting based on an analysis of the smoothed derivatives of the photon count histogram in scale space, and maximum likelihood estimation using Poisson statistics. The approach is demonstrated on simulated and real data from a multi-spectral ladar system, showing that the return parameters can be estimated to a high degree of accuracy.     

Impact of lead-free soldering processes on the performance of signal relay contacts

Various legislations, rules and regulations in Europe [Restrictions of the use of certain hazardous substances in electrical and electronic equipment (ROHS)] and Japan (Recycling Law for Home Electric Appliances) have either targeted restrictions or a full ban on the use of lead, to be enforced from 2001, 2005, and 2006 onwards. Next to these regulations, marketing arguments are becoming more and more important for so called "GREEN" products. Up to now, mainly tin-lead alloys have been used in electronics. The process temperatures usually applied have been in the range of 230/spl deg/C. All currently discussed lead-free alternatives for professional electronics need process temperatures which are at least 30/spl deg/C higher. In addition, the process duration is significantly longer. The combination of higher process temperatures and longer duration together results in a significant thermal stress on the precision mechanics of the relay. In order to guarantee proper functioning of the relay after the solder process with maximum process temperatures of 255/spl deg/C, the dimensional changes of the plastic parts must be less than a few micrometers in order to guarantee stable contact forces. The outgassing of the used insulating and sealing materials must be minimal in order not to pollute or contaminate the contacts. With the lead-free version of the IM relay, an identical performance and the same reliability during electrical and climatic endurance tests can be expected, even though relays were processed with typical lead-free soldering processes with temperatures up to 255/spl deg/C.     

Alternating-direction implicit (ADI) formulation of the finite-difference time-domain (FDTD) method: algorithm and material dispersion implementation

The alternating-direction implicit finite-difference time-domain (ADI-FDTD) technique is an unconditionally stable time-domain numerical scheme, allowing the /spl Delta/t time step to be increased beyond the Courant-Friedrichs-Lewy limit. Execution time of a simulation is inversely proportional to /spl Delta/t, and as such, increasing /spl Delta/t results in a decrease of execution time. The ADI-FDTD technique greatly increases the utility of the FDTD technique for electromagnetic compatibility problems. Once the basics of the ADI-FDTD technique are presented and the differences of the relative accuracy of ADI-FDTD and standard FDTD are discussed, the problems that benefit greatly from ADI-FDTD are described. A discussion is given on the true time savings of applying the ADI-FDTD technique. The feasibility of using higher order spatial and temporal techniques with ADI-FDTD is presented. The incorporation of frequency dependent material properties (material dispersion) into ADI-FDTD is also presented. The material dispersion scheme is implemented into a one-dimensional and three-dimensional problem space. The scheme is shown to be both accurate and unconditionally stable.