A fully soft-switched extended-period quasi-resonantpower-factor-correction circuit

This paper presents the design criteria, procedure, and implementation of a soft-switched power-factor-correction (PFC) circuit based on the extended-period quasi-resonant (EPQR) principles. All power electronic devices including switches and diodes in the circuit are fully soft switched. The design method is demonstrated in a prototype circuit. The operating principles are confirmed with computer simulation and experimental results. A comparison of the EP-QR operation and zero-voltage-transition (ZVT) pulse-width modulation (PWM) method     

Densification involved in the UV-based photosensitivity of silicaglasses and optical fibers

A comprehensive survey of photosensitivity in silica glasses and optical fiber is reviewed. Recent work on understanding the mechanisms contributing to germanium or aluminum doped fiber photosensitivity is discussed within the framework of photoelastic densification models     

Electrical linewidth test structures fabricated in monocrystallinefilms for reference-material applications

The physical widths of reference features incorporated into electrical linewidth test structures patterned in films of monocrystalline silicon have been determined from Kelvin voltage measurements. The films in which the test structures are patterned are electrically insulated from the bulk-silicon substrate by a layer of silicon dioxide provided by SIMOX (Separation by the IMplantation of OXygen) processing. The motivation is to facilitate the development of linewidth reference materials for critical-dimension (CD) metrology-instrument calibration. The selection of the (110) orientation of the starting silicon and the orientation of the structures' features relative to the crystal lattice enable a lattice-plane-selective etch to generate reference-feature properties of rectangular cross section and atomically planar sidewalls. These properties are highly desirable for CD applications in which feature widths are certified with nanometer-level uncertainty for use by a diverse range of CD instruments. End applications include the development and calibration of new generations of CD instruments directed at controlling processes for manufacturing devices having sub-quarter-micrometer features     

Tunable wavelength filters based on nonlinear optical interactionsin semiconductor amplifiers

A novel class of narrow-band tunable wavelength filters is proposed and evaluated. Wavelength selectivity of the proposed filters Is derived from the finite time response of an optical nonlinearity. The nonlinearity is gain saturation in semiconductor optical amplifier structures. The filters are shown to have very narrow passbands tunable over the entire semiconductor gain bandwidth. The key to filter implementation is a device configuration in which the wave-mixing products can be isolated from the amplified inputs. Three integrated optics compatible configurations are considered and shown to have high filter throughputs 34 to 180% and subangstrom bandwidths     

Low-temperature phase transformation in Li-10 at. % Mg

It is not known whether impaired hematopoiesis noted during human immunodeficiency virus (HIV) infection results from infection of stem/progenitor cells or of cells of the bone marrow microenvironment. Normal adherent primary stromal layers were exposed to HIV to determine which of this mixture of endothelial cells, fibroblasts, and macrophages are susceptible to the virus. Viral p24 in supernatants was noted with monocytotropic HIV-1Ada, HIV-1Ba-L, and HIV-1JR-FL but not with lymphotropic HIV-1LAI nor HIV-1MN strain, and only stromal macrophages expressed the viral antigens. Coculture of the layers with PHA-activated normal lymphocytes failed to rescue lymphotropic virus. No p24 was produced when macrophage-depleted stromal cells were exposed to either HIV-1Ba-L or HIV-1LAI; proviral DNA was then amplified by PCR in cells exposed to either virus, though coculture with lymphocytes rescued only HIV-1Ba-L. Altogether, these data indicate that macrophages are the major targets of HIV in cultured stromal layers. As virus replication in macrophages did not affect the profile of major cytokines involved in regulating hematopoiesis, HIV infection could alter hematopoiesis by other as yet unspecified mechanisms.     

Monitoring systems and determination of actual fatigue usage

At GKN, fatigue monitoring of important components has been conducted since 1979. The monitoring methods depend on the mechanisms of damage; quasi-static loads are regarded as well as dynamic loads. The components were selected for monitoring on the basis of a system analysis. The data resulting from monitoring are used to optimise operation mode steadily. Experience shows that the use of monitoring data as input for fatigue assessment is the most realistic and cost-effective way. This fatigue assessment uses global and local sensitivity studies to evaluate the load-stress relation for each component. These relations can be programmed to produce stress vs. time curves. These are processed according to ASME rules to give a realistic fatigue usage.     

Theory and design of a tapered line distributed photodetector

We present the theory and design of a tapered line distributed photodetector (TLDP). In the previously demonstrated velocity-matched distributed photodetector (VMDP), high electrical bandwidth is achieved by proper termination in the input end to absorb reverse traveling waves, sacrificing one-half of the quantum efficiency. By utilizing the tapered line structure and phase matching between optical waves and microwaves in our analyzed structure, a traveling-wave photodetector is more realizable and ultrahigh bandwidth can be attained due to removal of the extra input dummy load that sacrifices one-half of the total quantum efficiency. To investigate the advantages of TLDP over VMDP, we calculate their electrical bandwidth performances by using an analytic photodistributed current model. We adopted low-temperature-grown (LTG) GaAs-based metal-semiconductor-metal (MSM) traveling-wave photodetectors as example unit active devices in the analytic bandwidth calculation for their high-speed and high-power performances. Both VMDP and TLDP in our simulation are assumed to be transferred onto glass substrates, which would achieve high microwave velocity/impedance and make radiation loss negligible. The simulated bandwidth of a properly designed LTG GaAs MSM TLDP is /spl sim/325 GHz, which is higher than the simulated bandwidth of the LTG GaAs MSM VMDP with an open-circuit input end (/spl sim/240 GHz) and is almost comparable to the simulated bandwidth of an input-terminated LTG GaAs MSM VMDP (/spl sim/330 GHz). This proposed method can be applied to the design of high-bandwidth distributed photodetectors for radio-frequency photonic systems and optoelectronic generation of high-power microwaves and millimeter waves.