铜杆信息采集系统的研究

阐述了铜杆生产过程中信息采集系统的主要研究内容；概括了硬件的结构和选用的主要设备；阐述了上位机软件的主要模块及实现方法；系统采用面向对象的编程方法，界面友好，操作简单，功能完善；实际运行效果良好，具有较好的应用前景。     

I-DEAS软件在轮毂有限元分析中的应用

优化了铝合金轮毂的开发流程.采用I-DEAS软件对铝合金轮毂的弯曲疲劳、径向疲劳及冲击试验进行有限元分析,证明仿真分析可以满足指导车轮设计,优化车轮结构的要求.     

一种带有阀芯关闭位置电监视的二通插装阀

该文介绍了一种带有阀芯关闭位置电监视的二通插装阀，对其功能、优点和电器特性详细说明，并结合实例说明其安全应用方式。     

沼气脱硫技术研究

本文综述了近年研究人员在开发沼气脱硫工艺方面所做的工作,包括现代与传统的脱硫技术工艺.探讨了物理、化学和生物脱硫技术对沼气脱硫工艺的影响因素.     

宣钢1260 m3高炉扩容大修改造设计

宣钢l260m^3高炉大修改造时将炉容扩大到l350m^3，对高炉本体系统设备及冷却系统、自动控制及检测系统进行了全面的改造更新，在炉腹、炉腰及炉身下部高热负荷区域采用铜冷却壁，取消炉身中上部铸铁冷却壁凸台，并采用薄内衬等先进、适用、可靠、成熟的技术。     

N-Type Field-Effect Transistors Using Multiple Mg-Doped ZnO Nanorods

Nanorod field-effect transistors (FETs) that use multiple Mg-doped ZnO nanorods and a SiO₂ gate insulator were fabricated and characterized. The use of multiple nanorods provides higher on-currents without significant degradation in threshold voltage shift and subthreshold slopes. It has been observed that the on-currents of the multiple ZnO nanorod FETs increase approximately linearly with the number of nanorods, with on-currents of ~1 muA per nanorod and little change in off-current (~4times10^-12). The subthreshold slopes and on-off ratios typically improve as the number of nanorods within the device channel is increased, reflecting good uniformity of properties from nanorod to nanorod. It is expected that Mg dopants contribute to high n-type semiconductor characteristics during ZnO nanorod growth. For comparison, nonintentionally doped ZnO nanorod FETs are fabricated, and show low conductivity to compare with Mg-doped ZnO nanorods. In addition, temperature-dependent current-voltage characteristics of single ZnO nanorod FETs indicate that the activation energy of the drain current is very low (0.05-0.16 eV) at gate voltages both above and below threshold     

清华屏蔽实验反应堆中子注量率能谱的调节和测量

叙述了采用多种屏蔽过滤方法,通过实验获得多种条件下的中子注量率能谱的调节和测量。     

Influence of Billet Size on Flow, Solidification and Solute Transport in Continuous Casting

ListofSymbol　　B———Buoyancy ,m·s- 2 ;　　c———Concentrationofsoluteelement ;　　Cμ———Turbulentconstant;　　D———Diffusivityofsoluteelement ,m2 ·s- 1 ;　　fl,fs———Liquidandsolidfraction ;　　fμ———Turbulentcoefficient ;　　h———Enthalpy ,J·kg- 1 ;　　k———Turbulentkineticenergy ,m2 ·s- 2 ;　　kp———Equilibriumpartitioncoefficient;　　Kp———Permeabilityofmushyzone ,m2 ;　　K0 ———Permeabilitycoefficient;　　p———Pressure ,Pa ;　　Pr———Prandtlnumber ;…