高水头船闸输水廊道反弧门水弹性振动试验研究

本文简要介绍水弹性振动模型试验的相似准则，用近似满足水弹性相似准则的有机玻璃模型对－高水头船闸反弧形阀门进行流激振动试验研究．试验表明阀门的振动是随机振动，不仅有质量振动而且有结构振动，有若干阶模态被激发参与振动。在开门和关门过程中，阀门面板脉动压力和阀门振动是不大的，与葛洲坝船闸类似阀门间歇开启的振动水平相当。由于常压模型不能正确模拟空化现象，对于廊道内可能产生的空泡溃灭所引起的阀门振动尚需通过减压模型进行研究。     

Accelerated vibratory fatigue test by ultrasonic frequency at cryogenic temperature

The fatigue test is a time-consuming experiment. The accelerated fatigue testing technique is a dream for all researchers. In our laboratory, a vibratory fatigue testing machine was built, which works at 20 kHz for R = −1 and permits to carry out tests at cryogenic temperature. This is an automatic machine controlled by a PC computer. By using this apparatus, it is easy to save time by 400 to 500 times and a lot of liquid air (nitrogen or helium).

A titanium alloy, Ti6A14V (TA6V PQ french mark), was tested in liquid nitrogen (77 K) with this machine for S---N curve. At the same time, other fatigue tests were performed in SEP (Société Européenne de Propulsion) in conventional fatigue for the same material and the same conditions except the frequency. The comparison shows that the results are coherent.     

马来酸及其酐和衣康酸与PP熔体接枝反应机理的研究

以马来酸酐作对照，用热分析、流变、化学分析等方法，研究了马来酸和衣康酸在非隔氧条件下与ＰＰ熔体催化接枝反应的特点和规律，阐述了单体结构－单元反应相对速率－－接枝产物结构之间的关系，提出了３种接枝物的结构模型。     

照相材料的稳定与保存

本文讨论了影响照相材料稳定与保存的几个因素以及为保持照相材料最佳稳定性、保存性而采取的几种有效方法。     

“镍”催化酰氯和有机锡试剂交叉偶联反应的研究

镍络合物催化酰氯与有机锡试剂交叉偶联合成有机酮的反应,其反应选择性强,反应彻底,转化率高,工艺简单。在有机锡过量的情况下,对不同催化剂的催化活性和包括投料比,反应温度,反应时间,反应溶剂等反应条件进行了考察。     

管外上升R－113流体的沸腾换热试验

详细介绍了Ｒ－１１３流体管外上升流动的沸腾换热试验，包括试验台架、流量计和温度测量的修正，以及试验数据。拟合的换热关系式为ｑ＝５２８（Ｔｗ─Ｔｓ）１．３３。     

解线性及二次型规划问题增广的神经网络

本文提出了一个解线性及二次型规划问题的神经网络模型，证明了该网络是全局稳定于平衡点，而平衡点就是线性及二次型规划问题的解，该网络的优点是能够实时获得问题的精确解，且可以同时获得带等式不式约束的对偶问题解，该网络易于电路实现。     

An efficient numerical approach, for determining the dispersioncharacteristics of dual-mode elliptical-core optical fibers

Based on vectorial formulations which combine the surface integral equation method and the finite-element method, a novel numerical approach is proposed for calculating the dispersion coefficients of dual-mode elliptical-core fibers with arbitrary refractive index profiles. By differentiating the original formulations involving the propagation constant β and the guided mode fields H_x and H_y once and twice with respect to the normalized frequency V, the new formulations for {dβ/dV, dH_x/dV, dH_y/dV} and for {d²β/dV², d² H_x/dV², d²H_y/dV² } are obtained respectively. Once {β, H_x, H_y } is solved through the eigenvalue procedure which dominates the computing time, only a few matrix manipulations are required to obtain {dβ/dV, dH_x/dV, dH_y/dV} and {d²β/dV², d²H_x/dV² , d²H_y/dV²}. Some numerical examples are examined to see the influence of different refractive index distributions with dips on the dispersions of the four nondegenerate LP ₁₁ modes for elliptical-core fibers     

A new simplified threshold-voltage model for n-MOSFETs with nonuniformly doped substrate and its application to MOSFET's miniaturization

The formulation, verification, and application of a new simplified 2-D threshold voltage model for n-MOSFETs with nonuniformly doped substrate profile are provided, in which the averaged normal field at the Si/SiO/sub 2/ interface in the active channel is quoted from a simplified solution of two-dimensional Poisson equation using the Green function technique. Starting with the expression of this average normal field, a simple threshold-voltage model for short-channel n-MOSFETs with nonuniformly doped substrate profile is explicitly expressed in terms of device structures and terminal voltages by considering parabolic source-drain boundary potentials. Moreover, the effects of the junction depth on the threshold voltage are examined in detail. It is shown that the DIBL effect cannot be completely eliminated by simply increasing the substrate doping concentration. Comparisons among developed model, 2-D numerical analysis, and experimental data have been made and the accuracy of the developed analytical model has been verified. In addition, a direct extension of our model to the case of uniformly doped substrates leads to a new constraint equation for device miniaturization.<>