Moving Least-Squares Differential Quadrature Method for Free Vibration of Antisymmetric Laminates

In this paper, the moving least-squares differential quadrature (MLSDQ) method is employed for free vibration of thick antisymmetric laminates based on the first-order shear deformation theory. The generalized displacements of the laminates are independently approximated with the centered moving least-squares (MLS) technique within each domain of influence. The MLS nodal shape functions and their partial derivatives are computed quickly through back-substitutions after only one LU decomposition. Subsequently, the weighting coefficients in the MLSDQ discretization are determined with the nodal partial derivatives of the MLS shape functions. The MLSDQ method combines the merits of both the differential quadrature and meshless methods which can be conveniently applied to complex domains and irregular discretizations without loss of implementation efficiency and numerical accuracy. The natural frequencies of the laminates with various edge conditions, ply angles, and shapes are calculated and compared with the existing solutions to study the numerical accuracy and stability of the MLSDQ method. Effects of support size, order of completeness of basis functions, and node irregularity on the numerical accuracy are investigated in detail.     

High-performance MIM capacitor using ALD high-k HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.     

Low-temperature poly-SiGe alloy growth of high gain/speed pin infrared photosensor with gold-induced lateral crystallization (Au-ILC)

The hydrogenated poly-silicon germanium (poly-SiGe:H) epitaxial film has been investigated using gold-induced lateral crystallization (Au-ILC) technology on a-SiGe:H layers at 10-h 350/spl deg/C annealing temperature and 60-sccm hydrogen (H/sub 2/) content. Using this optimal condition, the growth rate of the induced Au was as large as 15.9 /spl mu/m/h. With a low annealing temperature (/spl les/400/spl deg/C) and large growth rate, this novel technology will be noticeably useful for poly-SiGe:H pin IR-sensing fabrication on a conventional precoated indium tin oxide (ITO)-glass substrate. Under a 1-/spl mu/W IR-LED incident light (with peak wave length at 710 nm) and at a 5-V biased voltage, the poly-SiGe:H pin IR sensor developed by the Au-ILC technology, i.e., an Al (anode)/n poly-SiGe:H/i poly-SiGe:H/p poly-SiGe:H/ITO (cathode)/glass-substrate structure allowed for maximum optical gain and response speed. The optical gains and the response speeds were almost 600 and 130%, respectively, better than that of a traditional pin type. Meanwhile, the FWHM of a poly-SiGe:H pin sensor with Au-ILC technology was reduced from 280 to 150 nm. This reveals excellent IR-sensing selectivity. These IR-sensing trials demonstrated again that the proposed Au-ILC technology has very useful application in the field of low cost integrated circuits on optoelectronic applications.     

The effects of nonlocal impact ionization on the speed of avalanche photodiodes

The nonlocal enhancement in the velocities of charge carriers to ionization is shown to outweigh the opposing effects of dead space, increasing the avalanche speed of short avalanche photodiodes (APDs) over the predictions of a conventional local model which ignores both of these effects. The trends in the measured gain-bandwidth product of two short InAlAs APDs reported in the literature support this result. Relatively large speed benefits are predicted to result from further small reductions in the lengths of short multiplication regions.     

抗真菌蛋白Rs-AFP2基因定点突变及其对大肠杆菌中表达的影响

为了研究遗传密码子对表达调控的影响,利用PCR重叠延伸法,对萝卜抗真菌蛋白Rs-AFP2基因编码序列区的部分核苷酸进行沉默突变,构建突变体Rs-AFPm.序列分析表明,PCR产物全长240bp,有一个阅读框,编码的蛋白由29个氨基酸的信号肽和51个氨基酸的抗真菌蛋白组成.突变体与突变前的Rs-AFP2基因相比,在编码区第3号氨基酸Lys相差一个碱基(TTG→TTA),第5号氨基酸Gln相差一个碱基(CAG→CAA),第6号稀有密码子Arg相差两个碱基(CAG→CGA).重新合成引物,将切除信号肽的Rs-AFP2基因和Rs-AFPm基因与原核表达载体pET-21b(+)分别重组到大肠杆菌BL21菌株.IPTG诱导后,二者均得到了表达.软件分析显示,突变前pETAFPo表达产物占全菌蛋白的3%,突变后pETAFPm的表达产物占全菌蛋白含量的8%;表达蛋白主要以包涵体的形式存在,包涵体经超声波破碎后,蛋白质复性,抑菌结果表明,pETAFPm表达产物的抑菌半径大于pETAFP2表达产物的抑菌半径.这些都说明改造后的Rs-AFPm基因与Rs-AFP2基因相比,已有效地提高表达量.     

基于VC++的Web浏览器的实现

利用VC 的浏览器控件,实现Web浏览器的设计方法.     

Mobile Device Security Using Transient Authentication

Mobile devices are vulnerable to theft and loss due to their small size and the characteristics of their common usage environment. Since they allow users to work while away from their desk, they are most useful in public locations and while traveling. Unfortunately, this is also where they are most at risk. Existing schemes for securing data either do not protect the device after it is stolen or require bothersome reauthentication. Transient Authentication lifts the burden of authentication from the user by use of a wearable token that constantly attests to the user's presence. When the user departs, the token and device lose contact and the device secures itself. We show how to leverage this authentication framework to secure all the memory and storage locations on a device into which secrets may creep. Our evaluation shows this is done without inconveniencing the user, while imposing a minimal performance overhead     

井下乳化/水热催化裂解复合降黏开采稠油技术研究

实验考察了胜利孤东稠油井下催化水热裂解和乳化/催化水热裂解降黏效果。所用催化剂为水溶性铁镍钒体系,Fe3+∶Ni2+∶VO4+=5∶1∶1,100 g稠油与30 g 0.5%催化剂水溶液在240℃反应24小时。原始黏度(50℃)11.0和8.36 Pa.s的两种稠油裂解并静置除水后,黏度降低76.2%和75.6%,室温放置60天后降黏率下降小于3个百分点,气相色谱显示裂解后轻组分明显增加,红外光谱显示稠油组分发生脱羧反应且芳环数减少。讨论了稠油催化水热裂解反应机理。所用化学助剂JN-A在油水中均可溶,耐温达250℃,耐矿化度达50 g/L,其水溶液以30∶100的质量比与稠油混合时形成低黏度的O/W乳状液。当水相含1.0%JN-A和0.5%催化剂时,两种稠油水热裂解后的反应混合物为O/W乳状液,黏度仅为319和309 mPa.s,静置除水后的稠油降黏率增加到86.5%和87.3%,其中的轻组分含量进一步增加。该井下乳化/催化水热裂解复合降黏法成功地用于孤东两口蒸汽吞吐井,稠油井作业后初期采出的原油黏度由~9 Pa.s降低到1 Pa.s左右,随采油时间延长而逐渐升高,约50天后超过4Pa.s。图2表6参5。     

A CMOS multichannel 10-Gb/s transceiver

We describe a CMOS multichannel transceiver that transmits and receives 10 Gb/s per channel over balanced copper media. The transceiver consists of two identical 10-Gb/s modules. Each module operates off a single 1.2-V supply and has a single 5-GHz phase-locked loop to supply a reference clock to two transmitter (Tx) channels and two receiver (Rx) channels. To track the input-signal phase, the Rx channel has a clock recovery unit (CRU), which uses a phase-interpolator-based timing generator and digital loop filter. The CRU can adjust the recovered clock phase with a resolution of 1.56 ps. Two sets of two-channel transceiver units were fabricated in 0.11-/spl mu/m CMOS on a single test chip. The transceiver unit size was 1.6 mm /spl times/ 2.6 mm. The Rx sensitivity was 120-mVp-p differential with a 70-ps phase margin for a common-mode voltage ranging from 0.6 to 1.0 V. The evaluated jitter tolerance curve met the OC-192 specification.