Cholesterol‐imprinted polymer receptor prepared by a hybrid imprinting method

A novel cholesterol‐imprinted polymer (CMIP‐H) was prepared by a hybrid method of covalent imprinting and non‐covalent imprinting. This approach involves the copolymerization of a template‐containing monomer, cholesteryl 2‐hydroxyethyl methacrylate carbonate, and a cross‐linker, followed by hydrolysis to afford a flexible guest‐binding site accompanied with the easy and efficient removal of a ‘sacrificial spacer’. The effect of solvent on the binding capacity of CMIP‐H towards cholesterol was studied, indicating that a good binding capacity towards cholesterol could be achieved in a less‐polar solvent. The binding experiments of CMIP‐H towards a series of structural analogues of cholesterol, including cholesterol acetate, progesterone and stigmasterol, were carried out in hexane. The results showed that CMIP‐H almost did not bind cholesterol acetate at all because the hydrogen‐bonding site is blocked. It exhibited a similar binding towards both cholesterol and stigmasterol, but much higher binding towards progesterone. Copyright © 2005 Society of Chemical Industry     

即时通讯软件的安全性分析

在互联网服务中,即时通讯已成为了最流行的服务模式之一,人们对即时通讯的依赖程度也与日俱增。但是, 频频出现的病毒和黑客攻击使广大用户深受其害,即时通讯的安全问题也日益严峻。为了从根本上解决问题,本文对即时通讯软件的架构和协议进行了深入分析,目的是找出漏洞根源,给开发者和使用者提供防止漏洞的依据。     

索风营水电站主要工程地质问题及勘测技术

索风营水电站因工程区喀斯特水文地质条件复杂,松散堆积体、危岩体、滑坡等不良地质体分布广泛,断裂、褶皱极为发育,故岩体连续性及完整性差,从而带来水库渗漏、枢纽区边坡稳定、库首渗漏、地下洞室喀斯特涌水涌泥、围岩稳定、软弱地基等一系列的工程地质问题,在乌江流域水电开发建设过程中具有代表性和典型性。本文从勘测、分析评价及工程处理等方面对该电站各种工程地质问题进行了总结。     

Broad-band MMICs based on modified loss-compensation method using 0.35-/spl mu/m SiGe BiCMOS technology

Using the concept of loss compensation, novel broad-band monolithic microwave integrated circuits (MMICs), including an amplifier and an analog multiplier/mixer, with LC ladder matching networks in a commercial 0.35-mum SiGe BiCMOS technology are demonstrated for the first time. An HBT two-stage cascade single-stage distributed amplifier (2-CSSDA) using the modified loss-compensation technique is presented. It demonstrates a small-signal gain of better than 15 dB from dc to 28 GHz (gain-bandwidth product=157 GHz) with a low power consumption of 48 mW and a miniature chip size of 0.63 mm² including testing pads. The gain-bandwidth product of the modified loss-compensated CSSDA is improved approximately 68% compared with the conventional attenuation-compensation technique. The wide-band amplifier achieves a high gain-bandwidth product with the lowest power consumption and smallest chip size. The broad-band mixer designed using a Gilbert cell with the modified loss-compensation technique achieves a measured power conversion gain of 19 dB with a 3-dB bandwidth from 0.1 to 23 GHz, which is the highest gain-bandwidth product of operation among previously reported MMIC mixers. As an analog multiplier, the measured sensitivity is better than 3000 V/W from 0.1 to 25 GHz, and the measured low-frequency noise floor and corner frequency can be estimated to be 20 nV/sqrt(Hz) and 1.2 kHz, respectively. The mixer performance represents state-of-the-art result of the MMIC broad-band mixers using commercial silicon-based technologies     

Viable：设计折射生活体验

从上个世纪九十年代中期开始，无定型的造型在设计中占据了主导。十年之后，人们的审美和设计标准发生了变化。几何原理的广泛应用使得生活物品的设计出现了“硬边”（产品的棱线和轮廓）与“精确”之风的回潮。也许是人们渴望在这个不稳定的世界中寻求稳定的元素，也许是为了用简单直白的设计来掩饰以往设计中复杂计算的造型。总之，设计师对成熟稳重的几何形式表现得情有独钟。这种席卷而来的感觉体现了一种设计的成熟，而Viable工作室的设计就是其中的代表；不仅如此，他们的设计还反映出了每个人对生活的不同理解。[编者按]     

A new iterative order reduction (IOR) method for eigensolutions of large structures

Order reduction is a computationally efficient method to estimate some lowest eigenvalues and the corresponding eigenvectors of large structural systems by reducing the order of the original model to a smaller one. But its accuracy is limited to a small range of frequencies that depends on the selection of the retained degrees of freedom. This paper proposes a new iterative order reduction (IOR) technique to obtain accurately the eigensolutions of large structural systems. The technique retains all the inertia terms associated with the removed degrees of freedom. This hence leads to the reduced mass matrix being in an iterated form and the reduced stiffness matrix constant. From these mass and stiffness matrices, the eigensolutions of the reduced system can be obtained iteratively. On convergence the reduced system reproduces the eigensolutions of the original structure. A proof of the convergence property is also presented. Applications of the method to a practical GARTEUR structure as well as a plate have demonstrated that the proposed method is comparable to the commonly used Subspace Iteration method in terms of numerical accuracy. Moreover, it has been found that the proposed method is computationally more efficient than the Subspace Iteration method. Copyright © 2003 John Wiley & Sons, Ltd.     

Silicon-to-steel bonding using rapid thermal annealing

This paper presents the rapid, low-temperature bonding between silicon and steel using the rapid thermal annealing process. Three different thin-film adhesion layer systems including silver, gold, and nickel were utilized as the intermediate bonding material to assist the eutectic Pb/Sn bonding between silicon and steel. The bonding temperature was set at 220/spl deg/C for 20 s, with a 20-s ramp-up time. Five experiments were conducted to determine the strength of the bond, including static tensile and compressive four-point bend tests, axial extension tests, tensile bending fatigue tests, and corrosion resistance tests. The test results have shown that the gold adhesion layer is the most robust, demonstrating minimal creep during fatigue tests, no delamination during the tensile or compressive four-point bend tests, and acceptable strength during the axial extension tests. Additionally, all adhesion layers have withstood four months of submersion in various high-temperature solutions and lubricants without failure. Simulations of the axial stresses and strains that developed during the four-point bend and axial extension tests were performed and showed that the presence of the silicon die provides a local reinforcement of the bond as observed in the experimental tests.     

Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall

In this letter, we will report on a nitride-based light emitting diode with a mesa sidewall roughening process that increases light output power. The fabricated GaN-based light-emitting diode (LED) wafers were first treated through a photoelectrochemical (PEC) process. The Ga/sub 2/O/sub 3/ layers then formed around the GaN : Si n-type mesa sidewalls and the bottoms mesa etching regions. Selective wet oxidation occurred at the mesa sidewall between the p- and the n-type GaN interface. The light output power of the PEC treated LED was seen to increase by about 82% which was caused by a reduced index reflectance of GaN-Ga/sub 2/O/sub 3/-air layers, by a rough Ga/sub 2/O/sub 3/ surface, by a microroughening of the GaN sidewall surface, and by a selective oxidation step profile of the mesa sidewall that increases the light-extraction efficiency from the mesa sidewall direction. Consequently, this wet PEC treated process is suitable for high powered nitride-based LEDs lighting applications.