A comprehensive and facile method for the synthesis of new functionalized bis-heterocyclic compounds containing a thieno[2,3-b]thiophene motif is described. The hitherto unknown bis-pyrazolothieno[2,3-b]thiophene derivatives 2a-c, bis-pyridazin othieno[2,3-b]thiophene derivatives 4, bis-pyridinothieno[2,3-b]thiophene derivatives 6a,b, and to an analogous bis-pyridinothieno[2,3-b]thiophene nitrile derivatives 7 are obtained. Additionally, the novel bis-pyradazinonothieno[2,3-b]thiophene derivatives 9, and nicotinic acid derivatives 10, 11 are obtained via bis-dienamide 8. The structures of all newly synthesized compounds have been elucidated by (1)H, (13)C NMR, GCMS, and IR spectrometry. These compounds represent a new class of sulfur and Nitrogen containing heterocycles that should also be of interest as new materials. 相似文献
Nano-clusters blind films of phenyl C61-butyric acid methyl ester (PCBM) and poly(3-hexylthiophene) (P3HT) were deposited on fluorine doped tin-oxide (FTO) substrate by spin coating and applied as counter electrodes instead of platinum for a new FTO/TiO2?+?K30 dye-sensitized solar cell. The photovoltaic parameters of the fabricated solar cell; open circuit voltage, short circuit current, output power and fill factor, were studied under various light intensities in the range 20:110?mW?cm?2. An impedance spectroscopy study was also performed in a wide frequency range (5?kHz–1?MHz) to study the electron transport properties of the solar cells. The capacitance–voltage of the prepared DSSC is characterized by two parts: positive values of capacitance at low frequency range, f?≤?100?kHz and negative capacitance i.e., an inductive behavior, in higher frequency range f?≥ 300 kHz Conducting polymer electrode based on PCBM:P3HT/FTO can be used as a counter electrode in a DSSC. 相似文献
This study aims to experimentally investigate whether Perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) organic layer at p-GaAs/Ag interface affects electrical transport across this interface or not. The electronic properties of metal–organic semiconductor–inorganic semiconductor structure between p type GaAs and PTCDA organic film have been investigated via current–voltage (I–V) and capacitance–voltage (C–V) methods. The Ag/PTCDA/p-GaAs contact exhibits a rectification behavior with the barrier height of 0.74 eV and ideality factor value of 3.42. Modification of the potential barrier of Ag/p-GaAs diode was achieved by using thin interlayer of the PTCDA organic material. This was attributed to the fact that the PTCDA organic interlayer increased the effective barrier height by influencing the space charge region of GaAs. The low and high frequency capacitance–voltage plots were used to determine the interface state density of the diode. 相似文献
A Box–Behnken design (Extraction-time, pulse-cycle, sonication-amplitude) was employed to extract phenolic compounds from Justicia spicigera leaves by ultrasonic-assisted extraction. The muicle leaves extracts were analyzed measuring total phenolic compounds and antioxidant capacity. According to response surface methodology the optimal conditions of ultrasonic-assisted extraction to obtain the highest soluble phenolic content were 2 min (extraction time) for 0.7 s (pulse cycle) at 55% of sonication amplitude. Under these optimal conditions, the total phenolic content was higher when was used ultrasonic-assisted extraction (54.02 mg/g) than stirring (46.46 mg/g) and thermal decoction (47.76 mg/g); however, the antioxidant capacity from J. spicigera extracts did not increase by ultrasonic-assisted extraction. The extracts or aqueous infusions from J. spicigera leaves are used for therapeutic proposes, therefore the ultrasonic-assisted extraction is a useful technology to improve the extraction of phytochemicals from J. spicigera leaves. 相似文献
The polycrystalline ZnGa2Se4 thin film was prepared by thermal evaporation technique on n-Si wafer followed by annealing at 700 K. Then, the Al/p- ZnGa2Se4/n-Si/Al heterojunction diode was fabricated. XRD pattern shows that the annealed ZnGa2Se4 film has a polycrystalline structure. AFM images indicate that the ZnGa2Se4 film is formed of nanoparticles. The dark current-voltage characteristics of the heterojunction diode at various temperatures have been investigated to determine the electrical parameters and conduction mechanism. The Al/p-ZnGa2Se4/n-Si/Al diode shows a rectification ratio of 2.644 × 102 at ±2 V at room temperature. It was found that at forward bias voltages ≤0.5 V, the conduction mechanism of the diode is controlled by the thermionic emission mechanism, while at bias voltages higher than 0.5 V, it is controlled by the space charge limited current mechanism. The series resistance Rs, the ideality factor n and the barrier height ?b values of the diode are determined by performing different plots from the forward current-voltage characteristics. The reverse current mechanism of the diode is controlled by the carrier generation-recombination process in the depletion region. The obtained results show that the Al/p-ZnGa2Se4/n-Si/Al heterojunction is a good candidate for the electronic device applications. 相似文献
In this investigation, we successfully synthesized a hybrid material, N-rGO@Fe2O3, via a one-step hydrothermal process, comprising nitrogen-doped reduced graphene oxide and α-Fe2O3. Thorough characterization using diverse analytical methods validated its structure. Employing this hybrid composite as a catalyst, we studied its efficacy in the catalytic thermal decomposition of ammonium nitrate (AN). The N-rGO@Fe2O3/AN composite was prepared using a recurrent spray coating method with 3 % mass of the hybrid material. Thermo-gravimetric (TG) and differential scanning calorimetric (DSC) analyses were employed to investigate the catalytic effect. Computational assessment of Arrhenius parameters was conducted through isoconversional kinetic approaches. Results from the kinetic analysis allowed the determination of the critical ignition temperature. Furthermore, calorific values for pure AN and N-rGO@Fe2O3/AN were measured using an oxygen calorimetric bombe, revealing a 41 % reduction in activation energy barrier and a lowering of the critical ignition temperature from 292 °C to 283 °C upon incorporation of the hybrid material. Notably, the surface modification of AN with N-rGO@Fe2O3 resulted in an increase of 1440 J/g in the observed calorific values. These findings highlight the potential of N-rGO@Fe2O3 as an effective catalyst, offering promising implications for applications in enhancing ammonium nitrate thermal decomposition. 相似文献
For the carbon-based glass fabrication/manufacture process, different amounts of pure graphite powder were added up to 100 wt.% of sodium tetraborate oxide (the weight of one mole of the sodium tetraborate is 381.372 g/mol) and then melted at 950 °C for 2 h before fast quenching in the air at RT. The resulted solids were examined by the XRD and SEM techniques, which confirmed the amorphous natures for studied samples. FTIR spectroscopy showed that some C-atoms are shared in the glass network as C–O and CO2. In contrast, the UV–Vis showed that the increase in the graphite contents/impurities causes a red shift in the value of the optical edge and the value of Fermi energy. Also, the increase of the graphite impurities causes a decrease in the bandgap values of both direct and indirect electronic transitions. Both the values of Urbach energy and the metallization indicated an increase in the crystallinity degree as the graphite content increase. A graphite-based glass is a promising material for wide-scale applications.