Effect of pulse time gate on CsI(T1) light output

The mass and charge identification of secondary particles with Z < 4 by a large CsI(T1) scintillation detector is performed using pulse shape analysis and time-of-flight methods. The dependence of the light output on E, A and Z is studied in the energy range of 1–20 MeV/A and special attention is paid to the integration time of the photomultiplier anode signal. It is found that the behaviour of the calibration curves strongly depends on the choice of the integration time interval.     

山区长输气管线的曲线测设

该文介绍了在山区长输气管线测量中 ,管线的折点桩之间大部分不通视且部分点上空有障碍物 ,采用GPS不能施测坐标时 ,结合山区的自然地理条件 ,采用全站仪间接施测折点水平角 ,极坐标法测设曲线以及跨越障碍物测设曲线的内容和方法 ,可在一定精度要求下应用     

超音速燃气射流非定常波系的数值研究

根据ＭＵＳＣＬ格式的基本思想，对格式进行了部分修改，数值模拟了超音速燃气射流流场的结构和发展过程。给出了流场谐波系的变化趋势，得到了流场达到稳定状态的时间和稳定后的流动图形。     

一种新颖的表面等离子谐振效应光波导水质传感技术

光学表面等离子谐振（ＳＰＲ）效应是一种很有效的水质检测技术，经过详细的理论推导，同了ＳＰＲ反射光强的普遍适用公式。在纯水与受污染水两种情况下，根据一些已知参数计算出结果。由计算结果数据一出的曲线比较表明，ＳＰＲ效应在两种情况下有明显差别，这也正是ＳＰＲ效应用于水质检测的理论根据。     

含混合金属的羟基镍铝交联蒙托石的合成

用两种方法——取代法和共聚法合成了一系列羟基镍铝交联蒙托石(GNiAl-CLM和NiAl-CLM),首次利用两种方法,交联前和交联后高温老化处理,对交联蒙托石的热稳定性进行改进。结果表明:取代法合成的羟基镍铝交联蒙托石具有均一的(001)面衍射,底面间距d(001)值均为1.8nm左右,而共聚法合成的羟基镍铝交联蒙托石出现两个(001)面衍射,d(001)值分别为1.8nm和1.55nm;高温处理后,热稳定性得到明显改进,热稳定性可高达700℃以上。     

利用信息融合方法的三维特征提取

本文提出了一种基于信息融合的物体三维特征的提取方法，该方法利用两幅互相配准的三维测距图像和灰度图像，来提取多面体的三维特征。首先，通过分析灰度图像中的灰度变化及测距图像中的测距值变化，分别求取各自图像中物体的特征点及特征边；然后，利用两配准图像之间的对应关系，求得所有特征点、面与多边形在三维测距图像中的三维表示；接着，通过分析三维测距图像中所测得的各候选平面上特定点与边处的曲率及法向，验证候选平面     

多孔板体结构足尺性能分析及材料基本要求

本文就利用诸如蛋白石这样的疏松多孔矿料同灰土构成的混合料，在路面结构中表现出的独特有效的抗冻作用机理作了深入分析，并结合足尺试验数据加以验证。阐述了所谓多孔板体结构的概念、机制和材料组成要求。     

Modeling ion implantation of HgCdTe

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n⁺/n^-/p, where the n⁺ region is near the surface and roughly coincides with the implant damage, the n^- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.     

带隔板底水油藏油井临界产量计算公式

本给出了带隔板底水油藏油井的监界产量计算公式，它适用于所有带隔板底水油藏的油井。