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91.
A survey of heterosexually active college students gathered information about condom use, self-efficacy (SE), outcome expectancies, sexual attitudes, peer group influences, AIDS knowledge, and a perceived vulnerability to AIDS. On the basis of A. Bandura's (1986) social-cognitive theory, a structural model with SE as the central mediator was formulated and evaluated with LISREL. This model explained 46% of the variance in condom use from judgments of SE and effects attributable to peers and 53% of the variance in SE from outcome expectancies and peer group influences. Sexual attitudes, AIDS knowledge, and perceived vulnerability did not predict condom use. Most students were well-informed about HIV transmission but reported not feeling at risk, even though many engaged in risky sexual behavior. (PsycINFO Database Record (c) 2010 APA, all rights reserved)  相似文献   
92.
We consider the problem of turbo multiuser detection for synchronous and asynchronous code-division multiple-access (CDMA) in the presence of unknown users. Turbo multiuser detectors, as previously developed, typically require knowledge of the signature waveforms of all of the users in the system and ignore users whose signature sequences are unknown, e.g., users outside the cell. We develop turbo multiuser detection for CDMA uplink systems and other environments in which the receiver has knowledge of the signature waveforms of only K˘⩽ K users. Subspace techniques are used to estimate the interference from the unknown-users and the interference estimate is subtracted from the received signal. We see that the new receiver significantly outperforms the conventional turbo multiuser receiver for moderate and high signal-to-noise ratios. It is also seen that the traditional turbo receiver provides little gain through iteration when unknown users are present  相似文献   
93.
94.
95.
Two new methods are proposed to implement the exclusive-OR and exclusive-NOR functions on the transistor level. The first method uses non-complementary signal inputs and the least number of transistors. The other one improves the performance of the prior method but two more transistors are utilized. Both of them have been fully simulated by HSPICE on a SUN SPARC 2 workstation  相似文献   
96.
A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 μm LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at Vg ≃0.5 Vd in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states  相似文献   
97.
Motivated by field data which showed a large number of link changeovers and incidences of link oscillations between in-service and out-of-service states in common channel signalling (CCS) networks, a number of analyses of the link error monitoring procedures in the SS7 protocol were performed by the authors. This paper summarizes the results obtained thus far and include the following: (a) results of an exact analysis of the performance of the error monitoring procedures under both random and bursty errors; (b) a demonstration that there exists a range of error rates within which the error monitoring procedures of SS7 may induce frequent changeovers and changebacks; (c) an analysis of the performance of the SS7 level-2 transmission protocol to determine the tolerable error rates within which the delay requirements can be met; (d) a demonstration that the tolerable error rate depends strongly on various link and traffic characteristics, thereby implying that a single set of error monitor parameters will not work well in all situations; and (e) some recommendations on a customizable/adaptable scheme of error monitoring with a discussion on their implementability. These issues may be particularly relevant in the presence of anticipated increases in SS7 traffic due to widespread deployment of advanced intelligent network (AIN) and personal communications service (PCS) as well as for developing procedures for high-speed SS7 links currently under consideration by standards bodies  相似文献   
98.
The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 Å to 30 Å on the device characteristics is also studied  相似文献   
99.
The performance of trellis coded-8PSK in the presence of cochannel interference is analyzed and compared with the performance of uncoded QPSK. The analytical expressions are derived and supported by simulating the bit error rate performance of different TC-8PSK systems. The analytical and simulation results show that TC-8PSK is slightly more robust to cochannel interference than uncoded QPSK  相似文献   
100.
In this paper, the CdxHg1-xTe (x=1-0.7) doped silica glass was prepared through two step sol-gel process and in-situ growth technique from tetraethoxysilane (TEOS), cadmium acetate, mercury acetate and telluric acid. The influence of various factors on the glass was studied. The structure of the microcrystals was investigated by XRD. The absorption and transmittance spectrum of the composite showed that the shift of absorption edge was in conformity with the quantum size effect. The third-order nonlinear optical susceptibility χ(3) was measured by the degenerate four wave mixing (DFWM). The values of χ(3) was in the range of 10-11-10-12 MO esu at wavelength of 1.06 μm.  相似文献   
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