考虑光学邻近效应的详细布线算法

提出了一种考虑光学邻近效应的详细布线算法.该算法在布线过程中,充分考虑了线网走线相对位置及布线线形对其光学邻近效应的影响,通过相应的光刻模拟模型定义了用于估计光学邻近效应(optical proximity effect,OPE)的OPE费用函数,并采用OPE费用阈值控制Steiner树的生长方向和走线路径的选择,同时兼顾线网长度.为提高算法效率,避免布线过程中反复调用光学模拟程序带来的算法运行速度慢的问题,对可能的走线模式建立了计算OPE费用所需的光强查找表格,使算法的运行速度大大提高.在实际的工业用例上的实验结果表明,本文所提出的详细布线算法使布线结果中的OPE问题得到很大程度的改善,有利于后处理过程中的光学邻近效应校正技术的运用,算法的运行时间是可以接受的.     

深亚微米nMOSFET器件的总剂量电离辐射效应

选取了采用0.25μm工艺的两组器件进行研究.通过对这两种器件关态泄漏电流、跨导和栅电流等电学参数进行分析,得出当器件发展到深亚微米阶段时,影响其辐射效应的主要原因是场氧化层中的陷阱电荷.并对相关机理进行了分析和仿真验证.     

一种适用于GSM/WCDMA的高线性度滤波器及带有消除直流偏置的可变增益放大器

采用SMIC 0.35μm CMOS混合信号工艺,实现了同时适用于GSM/WCDMA的完整的基带.基带由双模的高线性度的四阶切比雪夫形式的有源RC低通滤波器以及三级可变增益放大器构成.滤波器的设计同时满足GSM和WCDMA的带宽性能并且为降低制造成本在两种模式下具有最大的元件共享度.基带由于插入了高通滤波器具有滤除直流的功能,并且为了优化GSM模式下的功耗,运放的带宽做成可调.在最大增益情况下测得的噪声系数在GSM和WCDMA模式下分别为42和27.3dBm.在单位增益的情况下,WCDMA模式下的IIP3为40dBm,功耗为47.0mW;在GSM模式下,IIP3为28dBm,功耗为31.8mW.电源电压为3.3V.     

无源UHF RFID电子标签模拟前端设计

提出了一种符合ISO/IEC 18000-6B标准的高性能无源UHF RFID电子标签模拟前端,在915MHz ISM频带下工作时其电流小于8μA.该模拟前端除天线外无外接元器件,通过肖特基二极管整流器从射频电磁场接收能量.该RFID模拟前端包括本地振荡器、时钟产生电路、复位电路、匹配网络和反向散射电路、整流器、稳压器以及AM解调器等.该芯片采用支持肖特基二极管和EEPROM的Chartered 0.35μm 2P4M CMOS工艺进行流片,读取距离大于3m,芯片面积为300μm×720μm.     

空空导弹捷联惯导系统总体设计与仿真研究

探讨了空空导弹捷联惯导系统的总体设计技术,指出了系统设计时应考虑的几个主要问题,从总体设计的角度对捷联惯导系统的性能仿真环境和算法进行了分析和研究,并建立了系统仿真的模型框图,在此基础上进行了系统仿真和算法优化.     

Grooming of Arbitrary Traffic in Optical WDM Mesh Networks Using a Genetic Algorithm

In this paper, a genetic algorithm is proposed for grooming of arbitrary traffic in optical mesh networks. Traffic streams are routed in the wavelength division multiplexing (WDM) grooming networks that comprise both fiber links and established lightpaths. Chromosomes are split into multiple versions when multiple shortest routes are found. The selection strategy is based on a comparison between chromosomes. A variety of cost functions are proposed for the routing algorithm and two comparison methods are considered in the selection procedure. Computer simulations are performed with randomly generated traffic patterns. The results show that the algorithm is effective for traffic grooming (TG) problems, and also for routing and wavelength assignment problems.     

A Fast Algorithm for Identification and Tracing of Voltage and Oscillatory Stability Margin Boundaries

This paper presents a framework based on a differential manifold approach that combines identification and tracing of both saddle node and Hopf bifurcation margin boundaries without calculating any eigenvalues. For a given base case, we first identify either the saddle node or Hopf bifurcation. The Hopf bifurcation is easily detected by observing the sign change of scalar index in the tangent vector without eigenvalue calculation. Based on manifold and bifurcation theory, a unified formulation for a variety of bifurcation related voltage and oscillatory stability margin boundary tracing in multiparameter space is proposed. The bifurcation-related margin boundary could be traced along any control scenario in multicontrol parameter space combined with any given loading scenario. This is achieved by moving from one boundary point to the next without retracing the entire PV curve. This paves the way for online voltage and oscillatory stability assessment. The unified boundary predictor-corrector-identifier tracing framework is originally employed to trace both voltage collapse and oscillatory stability margin boundaries, which are limited by the saddle node and Hopf bifurcation, respectively. The manifold-based methodologies presented in this paper facilitate the development of fast margin monitoring and control algorithms.     

应用于MEMS的单晶硅上无电镀铜、镀镍工艺

开发了单晶硅上的选择性无电镀铜、镀镍工艺,形成了较为优化的施镀流程,实现了保形性、均镀性较好的铜、镍及其复合镀层.其中针对单晶硅表面的特点,采取了浓酸处理和氧等离子轰击两种表面预处理方法,优化了氯化钯对表面的激活时间,使得镀层质量得到提高.提出了以镍作为中间层以减小镀层应力的方法,施镀后获得的铜镀层的电阻率为2.1μΩ·cm,铜/镍复合镀层的方块电阻为0.19Ω/□.在单晶硅MEMS电感结构上实现了较好的无电镀铜,使得该元件的品质因数超过25.     

采用MEMS技术制作的螺线管电感

采用微机电系统技术制作了螺线管电感.为了获得高电感量和Q值,采用UV-LIGA、干法刻蚀、抛光和电镀技术,研制的电感大小为1500μm×900μm×70μm,线圈匝数为41匝,宽度为20μm,线圈之间的间隙为20μm,高深宽比为3.5:1.测试结果表明电感量最大值为6.17nH,Q值约为6.     

掺Si对AlGaInP/GaInP多量子阱发光性能的影响

研究了Si掺杂对MOCVD生长的(Al0.3Ga0.7)In0.5P/Ga0.5In0.5P多量子阱发光性能的影响.样品分为两类:一类只生长了(Al0.3Ga0.7)In0.5P/Ga0.5In0.5P多量子阱结构;另一类为完整的多量子阱LED结构.对于只生长了(Al0.3Ga0.7)In0.5P/Ga0.5In0.5P多量子阱结构的样品,掺Si没有改变量子阱发光波长,但使得量子阱发光强度略有下降,发光峰半高宽明显增大.这应是掺Si使量子阱界面质量变差导致的.而在完整LED结构的情况下,掺Si却大大提高了量子阱的发光强度.相对于未掺杂多量子阱LED结构,垒层掺Si使多量子阱的发光强度提高了13倍,阱层和垒层均掺Si使多量子阱的发光强度提高了28倍,并对这一现象进行了讨论.