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101.
地震数据采集系统中频谱均衡滤波器的理论设计 总被引:2,自引:0,他引:2
地层的高频吸收衰减效应是导致地震勘探分辨率不高的主要原因,在高分辨率野外地震数据系统中,频谱均衡滤波器所设置的重要部件。文章以频谱均衡滤波器的原理和地层吸收衰减特性为基础,用计算机模拟的方法研究地层吸收衰减使分辨率降低的程度和频谱均衡滤波器对分辨率的补偿效果,给出了较好的频谱均衡滤波器的设计方案。 相似文献
102.
103.
The selective reduction of nitrogen oxides by hydrocarbons on a Pt catalyst has been investigated. Some variations are observed between different reductants. However, the most significant result is the observation that no N2O is observed as a by-product when toluene is used as a reductant. 相似文献
104.
Tony Maillet Jacques Barbier Jr. Daniel Duprez 《Applied catalysis. B, Environmental》1996,9(1-4):251-266
A 1% Pd catalyst (38% dispersion) was prepared by impregnating a γ-alumina with palladium acetylacetonate dissolved in acetone. The behaviour of this catalyst in oxidation and steam reforming (SR) of propane was investigated. Temperature-programmed reactions of C3H8 with O2 or with O2 + H2O were carried out with different stoichiometric ratios S(S =[O2]/5[C3H8]). The conversion profiles of C3H8 for the reaction carried out in substoichiometry of O2 (S < 1) showed two discrete domains of conversion: oxidation at temperatures below 350°C and SR at temperatures above 350°C. The presence of steam in the inlet gases is not necessary for SR to occur: there is sufficient water produced in the oxidation to form H2 and carbon oxides by this reaction. Contrary to what was observed with Pt, an apparent deactivation between 310 and 385°C could be observed with Pd in oxidation. This is due to a reduction of PdOx into Pd0, which is much less active than the oxide in propane oxidation. Steam added to the reactants inhibits oxidation while it prevents the reduction of PdOx into Pd0. Compared to Pt and to Rh, Pd has a higher thermal resistance: no deactivation occurred after treatment up to 700°C and limited deactivation after treatment up to 900°C, provided that the catalyst is maintained in an oxygen-rich atmosphere during the cooling. 相似文献
105.
本文基于静态相关性分析和动态调整相结合的方法,提出了一种逻辑程序的执行模型,它不仅开发了“与“并行,同进也开发了一定的“或“并行,从而有效地加速了逻辑程序的执行。 相似文献
106.
高速钢W6Mo5Cr4V2的脱磷试验 总被引:1,自引:0,他引:1
在30kg感应炉上用CaO-Na2CO3-CaF2-FexO(MoO3)渣、MoCl6粉剂和Al-Ca合金作脱磷剂对高速钢W6Mo5Cr4V2进行脱磷试验。结果表明,CaO-Na2CO3-CaF2-FexO渣的脱磷效果最好,一般脱磷率可达26% ̄56%。 相似文献
107.
研究了铁钴钒软磁合金的铁芯损耗,发现铁芯损耗谱具有分形结构。讨论了带材厚度和磁感应强度对分形维数Df的影响。 相似文献
108.
Zinc sulphide thin film electroluminescent devices doped with Mn or Tb have been produced on p-type Si substrates using a process in which doped zinc oxide films are deposited by a sol-gel drain coating method from a solution of zinc acetate containing a manganese or terbium dopant. The films are then converted to ZnS by heating them in an atmosphere containing hydrogen sulphide which replaces the oxygyn with sulphur. The composition, crystalline structure and optical properties of films have shown that complete conversion from the oxide to the sulphide takes place. The luminescent characteristics of the devices so produced have been measured as a function of the doping concentrations, film thickness, insulator thickness and driving voltage and frequency. It has been found that yellow or green luminescence can be obtained using Mn or Tb doping respectively. 相似文献
109.
S. Pomp W. Eyrich R. Geyer M. Moosburger F. Stinzing 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》1996,370(2-3):381-388
A luminosity-monitor system for the JETSET experiment at LEAR is described. Four silicon-strip detectors are used as position sensitive devices to monitor the elastic
p-scattering. The design concept, data-acquisition and results of the detector system are presented. On-line monitoring is used to assure the proper operation of the JETSET experiment. 相似文献
110.
Silicon forms the backbone of the microelectronics industry, and possibly, of the optoelectronics industry, hitherto dominated by III/V materials. One of the remaining goals is to build an optical source in silicon. Erbium exhibits luminescent 1.54 μm intra-4f transitions in both silicon and porous silicon. This paper reviews the work which has been carried out in this field and discusses some possible additional applications of erbium-doped silicon in optoelectronics, such as a novel on-chip temperature sensor. 相似文献